CONTROLLER TO DETECT MALFUNCTIONING ADDRESS OF MEMORY DEVICE

    公开(公告)号:US20220238177A1

    公开(公告)日:2022-07-28

    申请号:US17720054

    申请日:2022-04-13

    Applicant: Rambus Inc.

    Abstract: A dynamic random access memory (DRAM) comprises a plurality of primary data storage elements, a plurality of redundant data storage elements, and circuitry to receive a first register setting command and initiate a repair mode in the DRAM in response to the first register setting command. The circuitry is further to receive an activation command, repair a malfunctioning row address in the DRAM, receive a precharge command, receive a second register setting command, terminate the repair mode in the DRAM in response to the second register setting command, receive a memory access request for data stored at the malfunctioning row address, and redirect the memory access request to a corresponding row address in the plurality of redundant data storage elements.

    TIMING-DRIFT CALIBRATION
    152.
    发明申请

    公开(公告)号:US20220223224A1

    公开(公告)日:2022-07-14

    申请号:US17556363

    申请日:2021-12-20

    Applicant: Rambus Inc.

    Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

    Adjustable access energy and access latency memory system and devices

    公开(公告)号:US11379136B2

    公开(公告)日:2022-07-05

    申请号:US17075357

    申请日:2020-10-20

    Applicant: Rambus Inc.

    Abstract: Same sized blocks of data corresponding to a single read/write command are stored in the same memory array of a memory device, but using different formats. A first one of these formats spreads the data in the block across a larger number of memory subarrays (a.k.a., memory array tiles—MATs) than a second format. In this manner, the data blocks stored in the first format can be accessed with lower latency than the blocks stored in the second format because more data can be read from the array simultaneously. In addition, since the data stored in the second format is stored in fewer subarrays, it takes less energy to read a block stored in the second format. Thus, a system may elect, on a data block by data block basis, whether to conserve power or improve speed.

    HIGH SPEED SIGNALING SYSTEM WITH ADAPTIVE TRANSMIT PRE-EMPHASIS

    公开(公告)号:US20220209999A1

    公开(公告)日:2022-06-30

    申请号:US17573471

    申请日:2022-01-11

    Applicant: Rambus Inc.

    Abstract: A high-speed signaling system with adaptive transmit pre-emphasis. A transmit circuit has a plurality of output drivers to output a first signal onto a signal path. A receive circuit is coupled to receive the first signal via the signal path and configured to generate an indication of whether the first signal exceeds a threshold level. A first threshold control circuit is coupled to receive the indication from the receive circuit and configured to adjust the threshold level according to whether the first signal exceeds the threshold level. A drive strength control circuit is coupled to receive the indication from the receive circuit and configured to adjust a drive strength of at least one output driver of the plurality of output drivers according to whether the first signal exceeds the threshold level.

    MEMORY MODULE FOR PLATFORM WITH NON-VOLATILE STORAGE

    公开(公告)号:US20220208267A1

    公开(公告)日:2022-06-30

    申请号:US17573456

    申请日:2022-01-11

    Applicant: Rambus Inc.

    Abstract: A system that includes a non-volatile memory subsystem having non-volatile memory. The system also includes a plurality of memory modules that are separate from the non-volatile memory subsystem. Each memory module can include a plurality of random access memory packages where each first random access memory package includes a primary data port and a backup data port. Each memory module can include a storage interface circuit coupled to the backup data ports of the random access memory packages. The storage interface circuit offloads data from the memory module in the event of a power loss by receiving data from the backup data ports of the random access memory packages and transmitting the data to the non-volatile memory subsystem.

    LOW POWER MEMORY WITH ON-DEMAND BANDWIDTH BOOST

    公开(公告)号:US20220199132A1

    公开(公告)日:2022-06-23

    申请号:US17432064

    申请日:2020-02-25

    Applicant: Rambus Inc.

    Inventor: Torsten Partsch

    Abstract: In a memory component having a command/address interface, timing interface and data interface, the command/address interface receives a first command/address value from a control component during a first interval and a second command/address value from the control component during a second interval. The timing interface receives a data strobe from the control component during the first interval and a data clock from the control component during the second interval, the data strobe departing from a parked voltage level to commence toggling at a time corresponding to reception of the first command/address value, and the data clock toggling throughout the second interval regardless of second command/address value reception-time. The data interface samples first write data corresponding to the first command/address value at times indicated by toggling of the data strobe, and samples second write data corresponding to the second command/address value at times indicated by toggling of the data clock.

    SINGLE ERROR CORRECT DOUBLE ERROR DETECT (SECDED) ERROR CODING WITH BURST ERROR DETECTION CAPABILITY

    公开(公告)号:US20220190846A1

    公开(公告)日:2022-06-16

    申请号:US17548176

    申请日:2021-12-10

    Applicant: Rambus Inc.

    Abstract: An integrated circuit (IC) device is disclosed. The IC device includes an error encoder to receive a word of k bits and to encode the word using a G-matrix to generate an encoded word of n bits. The n bits include the k bits and n-k check bits. The G matrix is based on a parity check matrix defining a single error correct, double error detect, and burst error detect (SECDEDBED) code. An error decoder receives the encoded word and applies the parity check matrix to the encoded word. The parity check matrix is configured to generate a syndrome from the encoded word. The syndrome being used to detect a random double bit error, a random single bit error, and a burst error of between two and m bits within m adjacent bits of an m-bit subset of the data word starting from an m-bit boundary of the word of k bits, and where m

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