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    Inorganic dies with organic interconnect layers and related structures
    152.
    发明授权
    Inorganic dies with organic interconnect layers and related structures 有权

    公开(公告)号：US11621192B2

    公开(公告)日：2023-04-04

    申请号：US17338296

    申请日：2021-06-03

    Applicant: Intel Corporation

    Inventor： Aleksandar Aleksov ,  Feras Eid ,  Telesphor Kamgaing ,  Georgios Dogiamis ,  Johanna M. Swan

    IPC: H01L21/768 ,  H01L23/00

    Abstract: Disclosed herein are methods to fabricate inorganic dies with organic interconnect layers and related structures and devices. In some embodiments, an integrated circuit (IC) structure may be formed to include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric. An example method includes forming organic interconnect layers over an inorganic interconnect substrate and forming passive components in the organic interconnect layer. The organic interconnect layers comprise a plurality of conductive metal layers through an organic dielectric material. The plurality of conductive metal layers comprises electrical pathways. the passive components are electrically coupled to the electrical pathways.

    BACK-SIDE POWER DELIVERY WITH GLASS SUPPORT AT THE FRONT
    155.
    发明申请
    BACK-SIDE POWER DELIVERY WITH GLASS SUPPORT AT THE FRONT 有权

    公开(公告)号：US20220344262A1

    公开(公告)日：2022-10-27

    申请号：US17241374

    申请日：2021-04-27

    Applicant: Intel Corporation

    Inventor： Abhishek A. Sharma ,  Wilfred Gomes ,  Telesphor Kamgaing

    IPC: H01L23/528 ,  H01L21/768 ,  H01L25/16 ,  H01L23/15

    Abstract: Embodiments of the present disclosure are based on using transistors with back-side contacts. Such transistors enable back-side power delivery to IC components (e.g., transistors, etc.) of an IC structure, which may be more advantageous than front-side power delivery in some implementations. Embodiments of the present disclosure are further based on recognition that using a glass support structure at the front side of an IC structure with back-side power delivery may advantageously reduce parasitic effects in the IC structure, e.g., compared to using a silicon-based support structure at the front.

    Waveguides with active or passive repeaters for range extension
    158.
    发明授权
    Waveguides with active or passive repeaters for range extension 有权

    公开(公告)号：US11367937B2

    公开(公告)日：2022-06-21

    申请号：US16464673

    申请日：2016-12-30

    Applicant: Intel Corporation

    Inventor： Georgios Dogiamis ,  Sasha Oster ,  Telesphor Kamgaing

    IPC: H01P3/16 ,  H01P3/08 ,  H03F3/19 ,  H03H11/04 ,  H05K1/02 ,  H05K1/18 ,  H05K7/14

    Abstract: Embodiments of the invention may include a mm-wave waveguide. In an embodiment, the mm-wave waveguide may include a first dielectric waveguide and a second dielectric waveguide. A conductive layer may be used to cover the first dielectric waveguide and the second dielectric waveguide in some embodiments. Furthermore, embodiments may include a repeater communicatively coupled between the first dielectric waveguide and the second dielectric waveguide. In an embodiment, the repeater may be an active repeater or a passive repeater. According to an embodiment, a passive repeater may be integrated within the dielectric waveguide. The passive repeater may include a dispersion compensating material that produces a dispersion response in a signal that is substantially opposite to a dispersion response produced when the signal is propagated along the dielectric waveguide.

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