公开(公告)号：US10586726B2

公开(公告)日：2020-03-10

申请号：US15855188

申请日：2017-12-27

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Bing Dang ,  Jeffrey Donald Gelorme ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Tsang Yang

IPC: H01L21/683 ,  H01L21/78

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：US10573538B2

公开(公告)日：2020-02-25

申请号：US16282432

申请日：2019-02-22

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Bing Dang ,  Jeffrey Donald Gelorme ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Tsang Yang

IPC: H01L21/56 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：US10546836B2

公开(公告)日：2020-01-28

申请号：US15272804

申请日：2016-09-22

Applicant: International Business Machines Corporation

Inventor： Bing Dang ,  Li-Wen Hung ,  John U. Knickerbocker ,  Jae-Woong Nah

IPC: H01L25/065 ,  H01L23/00 ,  H01L21/02 ,  H01L25/00

Abstract: A multi-layer wafer and method of manufacturing such wafer are provided. The method includes creating under bump metallization (UMB) pads on each of the two heterogeneous wafers; applying a conductive means above the UMB pads on at least one of the two heterogeneous wafers; and low temperature bonding the two heterogeneous wafers to adhere the UMB pads together via the conductive means. At least one stress compensating polymer layer may be applied to at least one of two heterogeneous wafers. The multi-layer wafer comprises two heterogeneous wafers, each of the heterogeneous wafer having UMB pads and at least one of the heterogeneous wafers having a stress compensating polymer layer and a conductive means applied above the UMB pads on at least one of the two heterogeneous wafers. The two heterogeneous wafers low temperature bonded together to adhere the UMB pads together via the conductive means.

公开(公告)号：US10448830B2

公开(公告)日：2019-10-22

申请号：US15272663

申请日：2016-09-22

Applicant: International Business Machines Corporation

Inventor： John U. Knickerbocker ,  Hyung-Min Lee ,  Kang-Wook Lee

IPC: A61B5/021 ,  A61B5/00 ,  A61B5/02 ,  A61B5/024 ,  A61B5/0402 ,  A61B5/1455

Abstract: An apparatus includes one or more memories storing computer readable code and processor(s). The processor(s), in response to loading and executing the computer readable code, cause the apparatus to perform operations including receiving electrocardiogram data from an electrocardiogram sensor. The electrocardiogram data includes data from an electrocardiogram from a person. The operations also include receiving pulse wave data from one or more pulse wave pressure sensors. The pulse wave data includes data from one or more pulse waves from the person. The operations further include determining blood pressure using the electrocardiogram data or the pulse wave data from the chest and the pulse wave data from the wrist or finger, and outputting an indication of the blood pressure. Another apparatus uses pulse wave data from two pulse wave sensors (e.g., pulse wave pressure sensor(s) and/or PPG sensor(s)) and blood pressure determinations are made using these pulse wave data.

公开(公告)号：US10395929B2

公开(公告)日：2019-08-27

申请号：US15859608

申请日：2017-12-31

Applicant: International Business Machines Corporation

Inventor： Russell A. Budd ,  Qianwen Chen ,  Bing Dang ,  Jeffrey D. Gelorme ,  Li-wen Hung ,  John U. Knickerbocker

IPC: H01L21/20 ,  B24B7/22 ,  H01L21/683 ,  H01L23/498

Abstract: Small size chip handling and electronic component integration are accomplished using handle fixturing to transfer die or other electronic components from a full area array to a targeted array. Area array dicing of a thinned device wafer on a handle wafer/panel may be followed by selective or non-selective de-bonding of targeted die or electronic components from the handle wafer and optional attachment to a carrier such as a transfer head or tape. Alignment fiducials may facilitate precision alignment of the transfer head or tape to the device wafer and subsequently to the targeted array. Alternatively, the dies or other electronic elements are transferred selectively from either a carrier or the device wafer to the targeted array.

公开(公告)号：US10381255B2

公开(公告)日：2019-08-13

申请号：US16214422

申请日：2018-12-10

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Russell A. Budd ,  Bing Dang ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Kang-I Tsang

IPC: B23K26/57 ,  B32B43/00 ,  H01L21/683 ,  H01L21/78 ,  H01L21/67 ,  H01L23/544

Abstract: A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

公开(公告)号：US10304802B2

公开(公告)日：2019-05-28

申请号：US15143801

申请日：2016-05-02

Applicant: International Business Machines Corporation

Inventor： Philip G. Emma ,  Hillery C. Hunter ,  John U. Knickerbocker

IPC: H01L25/065 ,  G06F3/06 ,  H01L25/00 ,  H01L25/18 ,  H01L23/544 ,  H01L23/528 ,  H01L23/498 ,  H01L23/367 ,  H01L21/78 ,  H01L21/768 ,  H01L23/48 ,  G02B6/122 ,  G11C29/52 ,  G06F11/10 ,  G11C29/00 ,  G11C29/56 ,  G11C11/401 ,  G11C29/42

Abstract: Examples of techniques for an integrated wafer-level processing system are disclosed. In one example implementation according to aspects of the present disclosure, an integrated wafer-level processing system includes a memory wafer and a processing element connected to the memory wafer via a data connection.

公开(公告)号：US10224219B2

公开(公告)日：2019-03-05

申请号：US14983674

申请日：2015-12-30

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Bing Dang ,  Jeffrey Donald Gelorme ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Tsang Yang

IPC: H01L21/56 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：US10098611B2

公开(公告)日：2018-10-16

申请号：US14977855

申请日：2015-12-22

Applicant: International Business Machines Corporation

Inventor： Kang-Wook Lee ,  John U. Knickerbocker

IPC: A61B7/04 ,  A61B7/00

Abstract: In accordance with the example embodiments of the invention there is at least a method and apparatus to perform receiving, with at least one diaphragm of a device placed on a skin of a living body of a human being or animal, acoustic data of the living body; determining digitized data from the acoustic data of the living body; and sending the digitized data towards an analytics system for a medical diagnosis associated with the living body; determining a relationship between the digitized data and health conditions of the human being or animal; and applying the relationship to a diagnosis of the health conditions of the human being or animal.

公开(公告)号：US09947570B2

公开(公告)日：2018-04-17

申请号：US15083665

申请日：2016-03-29

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Bing Dang ,  Jeffrey Donald Gelorme ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Tsang Yang

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L21/6836 ,  H01L21/6835 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/32145 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.