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    PRO697 polypeptides
    151.
    发明授权
    PRO697 polypeptides 失效
    PRO697多肽

    公开(公告)号：US07112657B2

    公开(公告)日：2006-09-26

    申请号：US10165247

    申请日：2001-10-19

    Applicant: Audrey Goddard ,  Paul J. Godowski ,  Austin L. Gurney ,  James Pan ,  William I. Wood

    Inventor： Audrey Goddard ,  Paul J. Godowski ,  Austin L. Gurney ,  James Pan ,  William I. Wood

    IPC: C07K14/47 ,  C07K16/46

    CPC classification number: C07K14/47

    Abstract: The present invention is directed to novel polypeptides and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention.

    Abstract translation: 本发明涉及新型多肽和编码那些多肽的核酸分子。 本文还提供了包含那些核酸序列的载体和宿主细胞，包含与异源多肽序列融合的本发明的多肽的嵌合多肽分子，与本发明的多肽结合的抗体以及本发明的多肽的制备方法 发明。

    Fabrication of dual work-function metal gate structure for complementary field effect transistors
    155.
    发明授权
    Fabrication of dual work-function metal gate structure for complementary field effect transistors 有权
    用于互补场效应晶体管的双功能金属栅极结构的制造

    公开(公告)号：US07033919B1

    公开(公告)日：2006-04-25

    申请号：US11042426

    申请日：2005-01-25

    Applicant: Allen S. Yu ,  James Pan

    Inventor： Allen S. Yu ,  James Pan

    IPC: H01L21/3205 ,  H01L21/4763

    CPC classification number: H01L29/6659 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6656

    Abstract: For fabricating dual gate structures of complementary transistors, a gate material is deposited into an opening disposed over a P-well and an N-well having the complementary transistors formed therein. An ion species is implanted into a portion of the gate material to form a first gate structure over one of the P-well or the N-well. The gate material remains to form a second gate structure over the other one of the P-well or the N-well. A thermal anneal is performed such that the ion species and the gate material react within the first gate structure.

    Abstract translation: 为了制造互补晶体管的双栅极结构，栅极材料沉积到设置在P阱上的开口中，并且其中形成有互补晶体管的N阱。 离子种类被注入到栅极材料的一部分中以在P阱或N阱中的一个上形成第一栅极结构。 栅极材料保留以在P阱或N阱中的另一个上形成第二栅极结构。 进行热退火，使得离子种类和栅极材料在第一栅极结构内反应。

    Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
    157.
    发明授权
    Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces 失效
    基于表面之间的温度差处理在半导体处理室中选择的表面的方法

    公开(公告)号：US07029537B2

    公开(公告)日：2006-04-18

    申请号：US11050998

    申请日：2005-02-04

    Applicant: James Pan

    Inventor： James Pan

    IPC: B08B7/04

    CPC classification number: C23C16/4405 ,  Y10S438/905

    Abstract: The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

    Abstract translation: 本发明涉及一种通过在所选择的表面之间产生温度差并使表面与相对于另一个所选择的表面的温度差的一端优先与表面反应的反应物接触来处理半导体处理室中的选定表面的方法 表面。 更具体地说，本发明涉及三氟化氮（NF 3 N 3）气体用于诸如快速热化学气化（“RTCVD”）系统的冷壁处理室的原位清洁的用途。

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