Semiconductor device having parallel thin film transistors
    152.
    发明授权
    Semiconductor device having parallel thin film transistors 失效
    具有并联薄膜晶体管的半导体器件

    公开(公告)号:US08450743B2

    公开(公告)日:2013-05-28

    申请号:US12492498

    申请日:2009-06-26

    摘要: Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.

    摘要翻译: 通过用激光照射而局部地形成可被认为是单晶的区域106,至少使用这些区域构成沟道形成区域112。 对于具有这种结构的薄膜晶体管,可以获得与采用单晶的特性相似的特性。 此外,通过并联连接多个这样的薄膜晶体管,可以获得与沟道宽度增加的单晶薄膜晶体管的特性相当的特性。

    Semiconductor device and method for forming the same
    154.
    发明授权
    Semiconductor device and method for forming the same 失效
    半导体装置及其形成方法

    公开(公告)号:US08017506B2

    公开(公告)日:2011-09-13

    申请号:US12604879

    申请日:2009-10-23

    IPC分类号: H01L21/20 H01L21/36

    摘要: A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.

    摘要翻译: 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小,该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造,阳极氧化栅极接触,覆盖 用金属暴露出硅半导体的表面,并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光,使金属被膜与硅反应,得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体(优选为1μm以下)的宽度紧密地将金属涂层紧密地粘接到暴露的源极和漏极区域,并且允许金属与硅反应的方式获得。

    DISPLAY DEVICE
    155.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20110163315A1

    公开(公告)日:2011-07-07

    申请号:US12982255

    申请日:2010-12-30

    IPC分类号: H01L29/786

    摘要: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

    摘要翻译: 本发明提供一种具有高开口率的有源矩阵型显示装置和所需的辅助电容器。 源极线和栅极线与像素电极的一部分重叠。 该重叠区域用作黑矩阵。 此外,通过利用像素电极设置由与像素电极相同材料制成的电极图案以形成辅助电容器。 允许在不降低开口率的情况下获得所需的辅助电容值。 此外,它允许电极图案用作用于抑制源极和栅极线和像素电极之间的串扰的电屏蔽膜。

    Charge transfer semiconductor device and manufacturing method thereof
    156.
    发明授权
    Charge transfer semiconductor device and manufacturing method thereof 失效
    电荷转移半导体器件及其制造方法

    公开(公告)号:US07943968B1

    公开(公告)日:2011-05-17

    申请号:US08994038

    申请日:1997-12-18

    IPC分类号: H01L27/148 H01L21/00

    摘要: A charge coupled device is manufactured by using a crystalline silicon film that is formed by growing a crystal in parallel with a substrate by utilizing the nickel element with an amorphous silicon film used as a starting film. The crystal growth direction is made coincident with the charge transfer direction. As a result, the charge coupled device is given high charge transfer efficiency.

    摘要翻译: 通过使用通过利用镍元素与非晶硅膜作为起始膜而使与晶体平行地生长晶体而形成的晶体硅膜来制造电荷耦合器件。 使晶体生长方向与电荷转移方向一致。 结果,电荷耦合器件具有高电荷转移效率。

    Active matrix display and forming method thereof
    157.
    发明授权
    Active matrix display and forming method thereof 有权
    有源矩阵显示及其形成方法

    公开(公告)号:US07924392B2

    公开(公告)日:2011-04-12

    申请号:US12469773

    申请日:2009-05-21

    IPC分类号: G02F1/1339

    CPC分类号: G02F1/13454 G02F1/1339

    摘要: An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved.

    摘要翻译: 一种具有提高的可靠性的有源矩阵液晶显示器。 像素区域和外围驱动器电路整体地封装在显示器上。 形成外围驱动电路的TFT位于液晶材料侧的密封材料层的内部,从而保护外围驱动电路免受外部湿气和污染物的影响。 这增强了外围驱动电路的长期可靠性。 像素TFT布置在像素区域中。 从形成外围驱动电路的TFT到像素TFT的引线缩短。 这导致电阻降低。 结果,改善了显示特性。

    Semiconductor device and a method for manufacturing the same
    158.
    发明授权
    Semiconductor device and a method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07863619B2

    公开(公告)日:2011-01-04

    申请号:US12427139

    申请日:2009-04-21

    IPC分类号: H01L29/10

    摘要: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

    摘要翻译: 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极,漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜,使得在高电阻率区域中产生N型导电性。 因此,可以提高N沟道型TFT对热电子的可靠性。

    Method for manufacturing semiconductor device
    159.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07837792B2

    公开(公告)日:2010-11-23

    申请号:US10946072

    申请日:2004-09-22

    IPC分类号: C30B21/02

    摘要: In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed. A semiconductor device manufacturing method is comprised of the steps of: forming an amorphous silicon film on a substrate having an insulating surface; patterning the amorphous silicon film to form a predetermined pattern; holding a metal element that accelerates the crystallization of silicon in such a manner that the metal element is brought into contact with the amorphous silicon film; performing a heating process to crystalize the amorphous silicon film, thereby being converted into a crystalline silicon film; and etching a peripheral portion of the pattern of the crystalline silicon film.

    摘要翻译: 在通过利用加速硅的结晶化的金属元素制造结晶硅膜的方法中,可以抑制该金属元素的不良影响。 半导体器件制造方法包括以下步骤:在具有绝缘表面的衬底上形成非晶硅膜; 图案化非晶硅膜以形成预定图案; 保持以使金属元素与非晶硅膜接触的方式加速硅的结晶的金属元素; 进行加热处理以使非晶硅膜结晶化,从而转变成晶体硅膜; 并蚀刻晶体硅膜的图案的周边部分。

    Image display system and method
    160.
    发明授权
    Image display system and method 有权
    图像显示系统及方法

    公开(公告)号:US07773160B2

    公开(公告)日:2010-08-10

    申请号:US11669977

    申请日:2007-02-01

    IPC分类号: H04N5/74

    摘要: An image display system comprises a first liquid crystal projector which projects a counterclockwise-rotating, circularly polarized light beam to form an image containing specific visual information on a screen and a second liquid crystal projector which projects a clockwise-rotating, circularly polarized light beam to form a white image on the same screen. When viewed with the naked eye, a combination of the two images projected on the screen appears totally white. A viewer wearing a dedicated viewing device equipped with an optical filter which allows counterclockwise-rotating, circularly polarized light to pass through can selectively see the image projected by the first liquid crystal projector.

    摘要翻译: 图像显示系统包括:第一液晶投影仪,其投射逆时针旋转的圆偏振光束,以在屏幕上形成包含特定视觉信息的图像;以及第二液晶投影仪,其将顺时针旋转的圆偏振光束投射到 在同一屏幕上形成一个白色图像。 当用肉眼观察时,投影在屏幕上的两个图像的组合显示为全白色。 佩戴配备有允许逆时针旋转的圆偏振光通过的滤光器的专用观察装置的观看者可以选择性地看到由第一液晶投影仪投影的图像。