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公开(公告)号：US20080061299A1
公开(公告)日：2008-03-13
申请号：US11979127
申请日：2007-10-31
IPC分类号： H01L29/04
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。
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公开(公告)号：US07109108B2
公开(公告)日：2006-09-19
申请号：US10938500
申请日：2004-09-13
IPC分类号： H01L21/4763
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.
摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 用金属暴露硅半导体的表面，并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光，使金属被膜与硅反应，得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘附到暴露的源极和漏极区域，并且允许金属与硅反应来获得。 可以实现高性能TFT。 金属硅化物层实现与源极和漏极的良好接触，并且由于其具有比硅更低的电阻率，所以源极和漏极区域之间的寄生电阻可以显着降低。
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公开(公告)号：US08324693B2
公开(公告)日：2012-12-04
申请号：US13290311
申请日：2011-11-07
IPC分类号： H01L29/76
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。
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公开(公告)号：US20050040476A1
公开(公告)日：2005-02-24
申请号：US10935177
申请日：2004-09-08
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/13 , H01L29/786 , H01L29/04
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。
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公开(公告)号：US06335555B1
公开(公告)日：2002-01-01
申请号：US09311067
申请日：1999-05-13
IPC分类号： H01L2976
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。
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公开(公告)号：US06194255B1
公开(公告)日：2001-02-27
申请号：US08839941
申请日：1997-04-18
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L27/1277 , H01L29/78621
摘要： A method of manufacturing a semiconductor device includes process of introducing a material for promoting crystallization of an amorphous semiconductor film, crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, introducing phosphorus to form a source region, a drain region, a pair of light doped regions and a channel region being defined between the pair of the light doped region, heating the crystalline semiconductor film so that the material is diffused from the channel region to each of the source and drain regions through each of the pair of light doped region.
摘要翻译： 一种制造半导体器件的方法包括引入用于促进非晶半导体膜的结晶的材料的工艺，使非晶半导体膜结晶以形成晶体半导体膜，引入磷以形成源极区，漏极区，一对光 掺杂区域和沟道区域之间限定在所述一对掺杂光区域之间，加热所述晶体半导体膜，使得所述材料通过所述一对光掺杂区域中的每一个从所述沟道区域扩散到所述源极和漏极区域中的每一个。
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公开(公告)号：US5962897A
公开(公告)日：1999-10-05
申请号：US886139
申请日：1997-06-30
IPC分类号： H01L21/336 , H01L21/70 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/786 , H01L27/01 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device incorporates a silicide film contacting the source and drain. The silicide layer substantially reduces parasitic resistance between the source and drain of the device, improving the performance of the TFT. The silicide layer may be formed by covering the silicon semiconductor with a metal and irradiating the metal with a laser to initiate a reaction with the adjacent silicon to produce a silicide film. The layer may also be formed by rigidly adhering a metal coating to the exposed source and drain regions using a triangular-shaped insulator, and allowing the metal to react with silicon.
摘要翻译： 薄膜晶体管器件包括接触源极和漏极的硅化物膜。 硅化物层大大降低了器件的源极和漏极之间的寄生电阻，从而改善了TFT的性能。 可以通过用金属覆盖硅半导体并用激光照射金属以引发与相邻硅的反应以形成硅化物膜来形成硅化物层。 该层还可以通过使用三角形绝缘体将金属涂层刚性粘附到暴露的源极和漏极区域并且允许金属与硅反应而形成。
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公开(公告)号：US5627384A
公开(公告)日：1997-05-06
申请号：US636820
申请日：1996-04-23
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/417 , H01L29/78 , H01L29/786 , H01L29/76
CPC分类号： H01L27/12 , H01L29/41733 , H01L29/66757 , H01L29/78621
摘要： Method of improving making contact with the source/drain regions of thin-film transistors. A substantially triangular insulator determines contacts with the source/drain regions by a self-aligning process. The width of this insulator can be determined without performing mask alignment. Furthermore, the width can be reduced. Therefore, the sheet resistance of the source/drain regions presents no serious problems.
摘要翻译： 改善与薄膜晶体管的源/漏区接触的方法。 基本上三角形的绝缘体通过自对准工艺确定与源极/漏极区的接触。 可以在不执行掩模对准的情况下确定该绝缘体的宽度。 此外，可以减小宽度。 因此，源极/漏极区域的薄层电阻没有严重的问题。
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9.发明授权公开(公告)号：US07615786B2
公开(公告)日：2009-11-10
申请号：US11979127
申请日：2007-10-31
IPC分类号： H01L27/14
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。
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公开(公告)号：US07602020B2
公开(公告)日：2009-10-13
申请号：US11522376
申请日：2006-09-18
IPC分类号： H01L27/12
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially—in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film.
摘要翻译： 薄膜晶体管器件通过引入硅化物膜来降低源极和漏极之间的基本上的电阻，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 使用金属的硅半导体的暴露表面，并且从上侧或从绝缘体基板侧向金属膜照射强光如激光束，以允许金属涂层与硅反应以获得硅化物膜 。
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