Abstract:
The present invention provides a tool for and method of using an infrared transmission technique to extract the full stress components of the in-plane residual stresses in thin, multi crystalline silicon wafers including in situ measurement of residual stress for large cast wafers. The shear difference method is used to obtain full stress components by integrating the shear stress map from the boundaries. System ambiguity at the boundaries is resolved completely by introducing a new analytical function. A new anisotropic stress optic law is provided, and stress optic coefficients are calibrated for different crystal grain orientations and stress orientations.
Abstract:
An apparatus and method for measurement of the stress in and thickness of the walls of glass containers is disclosed that uses fluorescence to quickly and accurately ascertain both the thickness of the stress layers and the wall thickness in addition to the stress curve in glass containers. The apparatus and method may be used to quickly and accurately measure both the stress in and the thickness of the side walls of glass containers throughout the circumference of the glass containers. The apparatus and method are adapted for large scale glass container manufacturing, and are capable of high speed measurement of the stress in and the thickness of the side walls of glass containers.
Abstract:
The present invention is directed toward devices comprising carbon nanotubes that are capable of detecting displacement, impact, stress, and/or strain in materials, methods of making such devices, methods for sensing/detecting/monitoring displacement, impact, stress, and/or strain via carbon nanotubes, and various applications for such methods and devices. The devices and methods of the present invention all rely on mechanically-induced electronic perturbations within the carbon nanotubes to detect and quantify such stress/strain. Such detection and quantification can rely on techniques which include, but are not limited to, electrical conductivity/conductance and/or resistivity/resistance detection/measurements, thermal conductivity detection/measurements, electroluminescence detection/measurements, photoluminescence detection/measurements, and combinations thereof. All such techniques rely on an understanding of how such properties change in response to mechanical stress and/or strain.
Abstract:
The stress of a sample semiconductor wafer is detected with high accuracy in the form of an absolute value without rotating the sample or the entire optical system. A laser light R is subjected to photoelastic modulation in a PEM 6 to generate a birefringence phase difference and then it is passed through first and second quarter wavelength plates and passes through a semiconductor wafer D having residual stress. When it is passed through a test piece, the direction of the stress of the test piece is detected when the angle between the laser light R and a linear polarization light is 0 and 90 degrees. The transmitted electric signal is delivered to an analog/digital converter 16, and the signal is inputted to a signal processor thus generating transmission signal data. The signal processor reads out the stored reference signal data and the transmission signal data and calculates a reference birefringence phase difference and the absolute values of the birefringence phase difference.
Abstract:
A detection system for measuring glass that has been placed under strain and the resulting stress lines in the glass has a light source of individual elements configured to create a light distribution. The light distribution has a discontinuity which enhances the viewing of a photoelastic effect in the glass. The light source creates a viewable optical interference (i.e., color changes) which results from stress lines in the glass.
Abstract:
Strain waves of THz frequencies can coherently generate radiation when they propagate past an interface between materials with different piezoelectric coefficients. Such radiation is of detectable amplitude and contains sufficient information to determine the time-dependence of the strain wave with unprecedented subpicosecond, nearly atomic time and space resolution.
Abstract:
A system and method relating to the measuring of torque in a rotating shaft is provided. An optical torque sensing system comprises a rotating shaft, wherein a sleeve of photo-elastic material overlays a portion of the shaft. A light emitting component delivers light into the photo-elastic material, wherein the light delivered by the light emitting component is directed through the photo-elastic material along an axis of the rotating shaft. A capturing component captures the light that exits the photo-elastic material. The exiting light comprises fringe pattern data, and a computing system computes torsion strain of the shaft based at least in part on the fringe pattern information
Abstract:
A system and method relating to the measuring of torque in a rotating shaft is provided. An optical torque sensing system comprises a rotating shaft, wherein a sleeve of photo-elastic material overlays a portion of the shaft. A light emitting component delivers light into the photo-elastic material, wherein the light delivered by the light emitting component is directed through the photo-elastic material along an axis of the rotating shaft. A capturing component captures the light that exits the photo-elastic material. The exiting light comprises fringe pattern data, and a computing system computes torsion strain of the shaft based at least in part on the fringe pattern information
Abstract:
Systems and methods for measuring stress in a specimen are provided. One system includes an optical subsystem configured to measure stress-induced birefringence in patterned structures formed on the specimen. In some embodiments, the optical subsystem may be configured as a spectroscopic ellipsometer, a multi-angle laser ellipsometer, a polarimeter, a polarized reflectometer, or some combination thereof. The system also includes a processor coupled to the optical subsystem. The processor is configured to determine stress in a material of the patterned structures using the stress-induced birefringence measurements. One method includes measuring stress-induced birefringence in patterned structures formed on the specimen using an optical technique. The method also includes determining stress in a material of the patterned structures using the stress-induced birefringence measurements.
Abstract:
A non-contacting strain measurement method and system employs a laser light source for irradiating a test piece to provide a spectral pattern in spaced relationship from the test piece. The pattern is viewed while the test piece is placed under tension by a plurality of video cameras. The CCD video cameras are coupled to signal processing circuits which calculate the Poisson ratio according to the formula: εxx=−ΔAx/2L0 tan θ0
Abstract translation:非接触应变测量方法和系统采用激光光源照射测试片以提供与测试片间隔开的光谱图案。 当测试片被多个摄像机放置在张力下时,观察图案。 CCD摄像机耦合到信号处理电路,信号处理电路根据以下公式计算泊松比:<?in-line-formula description =“In-line Formulas”end =“lead”?> epsilon xx SUB β=-ΔA-x / 2 L 0&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&gt;&lt;&lt;&lt; line-formula description =“In-line Formulas”end = “尾巴”?