公开(公告)号：US08889087B2

公开(公告)日：2014-11-18

申请号：US13948967

申请日：2013-07-23

Applicant: Anna Lee Y. Tonkovich ,  Robert D. Litt ,  Timothy M. Werner ,  Bin Yang

Inventor： Anna Lee Y. Tonkovich ,  Robert D. Litt ,  Timothy M. Werner ,  Bin Yang

IPC: B01J8/00 ,  B01J19/18 ,  B01J19/00 ,  C10G2/00 ,  C07C29/152

CPC classification number: B01J19/0093 ,  B01J19/1831 ,  B01J2219/00783 ,  B01J2219/00835 ,  B01J2219/00873 ,  B01J2219/00984 ,  C07C29/152 ,  C10G2/341 ,  C07C31/04

Abstract: An integrated microchannel reactor and heat exchanger comprising: (a) a waveform sandwiched between opposing shim sheets and mounted to the shim sheets to form a series of microchannels, where each microchannel includes a pair of substantially straight side walls, and a top wall formed by at least one of the opposing shim sheets, and (b) a first set of microchannels in thermal communication with the waveform, where the waveform has an aspect ratio greater than two.

Abstract translation: 一种集成微通道反应器和热交换器，包括：（a）夹在相对的垫片之间的波形并安装到垫片以形成一系列微通道，其中每个微通道包括一对基本上直的侧壁，以及由 至少一个相对的垫片，和（b）与波形热连通的第一组微通道，其中波形的纵横比大于2。

公开(公告)号：US08741753B2

公开(公告)日：2014-06-03

申请号：US13611736

申请日：2012-09-12

Applicant: Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

Inventor： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

IPC: H01L21/20 ,  H01L21/3205 ,  H01L21/00

CPC classification number: H01L29/7833 ,  H01L21/28512 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545

Abstract: A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate insulator material, and a layer of contact metal overlying the layer band edge gate metal. The device further includes source and drain contacts adjacent to the channel. The source and drain contacts each include a layer of the gate metal that overlies and is in direct electrical contact with a doped region of the semiconductor substrate, and a layer of contact metal that overlies the layer of gate metal.

Abstract translation: 一种器件包括形成在半导体衬底中的沟道上方的栅叠层。 栅极堆叠包括栅极绝缘体材料层，覆盖栅极绝缘体材料层的栅极金属层和覆盖层带边缘栅极金属的接触金属层。 该装置还包括邻近通道的源极和漏极接触。 源极和漏极触点各自包括覆盖并与半导体衬底的掺杂区域直接电接触的栅极金属层以及覆盖在栅极金属层上的接触金属层。

公开(公告)号：US08735727B2

公开(公告)日：2014-05-27

申请号：US13326425

申请日：2011-12-15

Applicant: Yun-Lung Chen ,  Chung Chai ,  Zhao-Bin Yang

Inventor： Yun-Lung Chen ,  Chung Chai ,  Zhao-Bin Yang

IPC: H01B7/00 ,  H05K5/00 ,  H05K7/00 ,  G06F1/16

CPC classification number: G06F1/181 ,  G06F1/189 ,  G06F2200/1639

Abstract: An electronic device having a cable holding device is disclosed. The electronic device comprises a case; a circuit board in the case; a cable holding device attached to the circuit board and defining a through hole, a first positioning slot and a second positioning slot; the first positioning slot communicating with the through hole, and the second positioning slot communicating with the through hole; a cable electronically connected to the circuit board; wherein the cable is received either in the first positioning slot and the through hole or in the second positioning slot and the through hole.

Abstract translation: 公开了具有电缆保持装置的电子装置。 电子设备包括壳体; 电路板在这种情况下; 连接到电路板并限定通孔的电缆固定装置，第一定位槽和第二定位槽; 所述第一定位槽与所述通孔连通，所述第二定位槽与所述通孔连通; 电缆连接到电路板的电缆; 其中所述电缆被接收在所述第一定位槽和所述通孔中或所述第二定位槽和所述通孔中。

公开(公告)号：US08685365B2

公开(公告)日：2014-04-01

申请号：US13747440

申请日：2013-01-22

Applicant: James A. Mathias ,  G. Bradley Chadwell ,  Annalee Y. Tonkovich ,  Steven T. Perry ,  Matthew B. Schmidt ,  Sean P. Fitzgerald ,  David J. Hesse ,  Thomas D. Yuschak ,  Bin Yang

Inventor： James A. Mathias ,  G. Bradley Chadwell ,  Dongming Qiu ,  Annalee Y. Tonkovich ,  Steven T. Perry ,  Matthew B. Schmidt ,  Sean P. Fitzgerald ,  David J. Hesse ,  Thomas D. Yuschak ,  Bin Yang

IPC: C01B3/24 ,  B01J19/00 ,  B01J8/00

CPC classification number: F16L41/02 ,  B01J19/0093 ,  B01J35/04 ,  B01J2219/00869 ,  B01J2219/00891 ,  C01B3/384 ,  C01B2203/0233 ,  C01B2203/0811 ,  C01B2203/0822 ,  F28D7/0066 ,  F28D9/0093 ,  F28F3/12 ,  F28F7/02 ,  F28F2260/02 ,  Y02P20/128 ,  Y02P20/52 ,  Y10T137/0318 ,  Y10T137/6579 ,  Y10T137/87153 ,  Y10T137/87249

Abstract: Provided is a process and device for exchanging heat energy between three or more streams in a microchannel heat exchanger which can be integrated with a microchannel reactor to form an integrated microchannel processing unit. The combining of a plurality of integrated microchannel devices to provide the benefits of large-scale operation is enabled. In particular, the microchannel heat exchanger enables flexible heat transfer between multiple streams and total heat transfer rates of about 1 Watt or more per core unit volume expressed as W/cc.

Abstract translation: 提供了一种用于在微通道热交换器中的三个或更多个流之间交换热能的过程和装置，其可以与微通道反应器集成以形成集成的微通道处理单元。 实现了多个集成微通道装置的组合以提供大规模操作的优点。 特别地，微通道热交换器使得能够在多个流之间实现柔性热传递，并且以W / cc表示的每单位体积的约1瓦或更高的总传热速率。

公开(公告)号：US20140081924A1

公开(公告)日：2014-03-20

申请号：US13369831

申请日：2012-02-09

Applicant: Logan R. Jennings ,  Zi-Bin Yang

Inventor： Logan R. Jennings ,  Zi-Bin Yang

IPC: G06F17/30

CPC classification number: G06F16/1824

Abstract: Exemplary embodiments provide various techniques and systems for identifying data objects stored on clustered logical data containers. In one embodiment, a method is provided for creating a backward data object handle. In this method, a request to create a file is received, and a redirector file is created on a first logical data container based on receipt of the request. A redirector handle resulting from the creation of the redirector file is received. A data object of the file is then created on a second logical data container using the redirector handle as an identifier of the data object. This redirector handle included in the identifier then becomes a backward data object handle that points from the data object to the redirector file. As such, the redirector file can be identified by referencing the identifier of the data object.

Abstract translation: 示例性实施例提供用于识别存储在聚类逻辑数据容器上的数据对象的各种技术和系统。 在一个实施例中，提供了一种用于创建反向数据对象句柄的方法。 在该方法中，接收到创建文件的请求，并且基于接收到请求，在第一逻辑数据容器上创建重定向器文件。 接收到由重定向器文件的创建导致的重定向器句柄。 然后，使用重定向器句柄作为数据对象的标识符，在第二逻辑数据容器上创建该文件的数据对象。 标识符中包含的重定向器句柄将成为从数据对象指向重定向器文件的后向数据对象句柄。 因此，可以通过引用数据对象的标识符来识别重定向器文件。

公开(公告)号：US08652963B2

公开(公告)日：2014-02-18

申请号：US13237732

申请日：2011-09-20

Applicant: Bin Yang ,  Christian Lavoie ,  Emre Alptekin ,  Ahmet S. Ozcan ,  Cung D. Tran ,  Mark Raymond

Inventor： Bin Yang ,  Christian Lavoie ,  Emre Alptekin ,  Ahmet S. Ozcan ,  Cung D. Tran ,  Mark Raymond

IPC: H01L21/44

CPC classification number: H01L29/665 ,  H01L21/28518 ,  H01L29/6659 ,  H01L29/7833

Abstract: An MOSFET device having a Silicide layer of uniform thickness, and methods for its fabrication, are provided. One such method involves depositing a metal layer over wide and narrow contact trenches on the surface of a silicon semiconductor substrate. Upon formation of a uniformly thin amorphous intermixed alloy layer at the metal/silicon interface, the excess (unreacted) metal is removed. The device is annealed to facilitate the formation of a thin silicide layer on the substrate surface which exhibits uniform thickness at the bottoms of both wide and narrow contact trenches.

Abstract translation: 提供具有均匀厚度的硅化物层的MOSFET器件及其制造方法。 一种这样的方法包括在硅半导体衬底的表面上的宽且窄的接触沟槽上沉积金属层。 在金属/硅界面处形成均匀薄的无定形混合合金层时，除去过量的（未反应的）金属。 该器件被退火以促进在衬底表面上形成薄的硅化物层，其在宽和窄接触沟槽的底部显示均匀的厚度。

公开(公告)号：US20140003649A1

公开(公告)日：2014-01-02

申请号：US13997258

申请日：2011-12-23

Applicant: Gaoyang Wang ,  Wenfa Qi ,  Lidong Wang ,  Bin Yang

Inventor： Gaoyang Wang ,  Wenfa Qi ,  Lidong Wang ,  Bin Yang

IPC: G06T1/00

CPC classification number: G06T1/0021 ,  G06K9/348 ,  G06K2209/01 ,  G06T2201/0051 ,  G06T2201/0062 ,  G06T2201/0083

Abstract: The application provides a method for partitioning a watermark image with western language characters, comprising: partitioning a western language characters image along rows and columns to form a plurality of character image blocks; identifying valid character image blocks from the formed character image blocks; counting sizes of the valid character image blocks to determine if the image corresponds to a document with a large font size or a document with a small font size; dividing words in the image into a plurality of groups, wherein each divided group in the document with large font size has different numbers of words from that with small font size; and dividing equally the divided word groups into multiple portions corresponding to watermark image blocks. The application further provides a device for partitioning a watermark image with western language characters. The operability of watermark embedding process can be ensured through the above technical solution.

Abstract translation: 该应用程序提供了一种用于用西方语言字符分割水印图像的方法，包括：沿着行和列划分西方语言字符图像以形成多个字符图像块; 从形成的字符图像块中识别有效的字符图像块; 计算有效字符图像块的大小，以确定图像是否对应于具有较大字体大小的文档或具有小字体大小的文档; 将图像中的单词划分成多个组，其中具有大字体大小的文档中的每个划分组具有与具有小字体尺寸的单词不同的字数; 并将划分的字组分成相当于水印图像块的多个部分。 该应用还提供了一种用于用西语字符分割水印图像的设备。 通过上述技术方案可以确保水印嵌入过程的可操作性。

公开(公告)号：US08518758B2

公开(公告)日：2013-08-27

申请号：US12726889

申请日：2010-03-18

Applicant: Bin Yang ,  Man Fai Ng

Inventor： Bin Yang ,  Man Fai Ng

IPC: H01L27/12

CPC classification number: H01L29/78618 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78684 ,  H01L29/78696

Abstract: A semiconductor is formed on an SOI substrate, such as an extremely thin SOI (ETSOI) substrate, with increased extension thickness. Embodiments include semiconductor devices having an epitaxially formed silicon-containing layer, such as embedded silicon germanium (eSiGe), on the SOI substrate. An embodiment includes forming an SOI substrate, epitaxially forming a silicon-containing layer on the SOI substrate, and forming a gate electrode on the epitaxially formed silicon-containing layer. After gate spacers and source/drain regions are formed, the gate electrode and underlying silicon-containing layer are removed and replaced with a high-k metal gate. The use of an epitaxially formed silicon-containing layer reduces SOI thickness loss due to fabrication process erosion, thereby increasing extension thickness and lowering extension resistance.

Abstract translation: 在诸如极薄的SOI（ETSOI）衬底的SOI衬底上形成半导体，具有增加的延伸厚度。 实施例包括在SOI衬底上具有外延形成的含硅层（例如嵌入硅锗（eSiGe））的半导体器件。 实施例包括形成SOI衬底，在SOI衬底上外延形成含硅层，并在外延形成的含硅层上形成栅电极。 在形成栅极间隔物和源极/漏极区之后，去除栅电极和下面的含硅层，并用高k金属栅极代替。 使用外延形成的含硅层由于制造工艺侵蚀而减少SOI厚度损失，从而增加延伸厚度并降低延伸电阻。

公开(公告)号：US08456011B2

公开(公告)日：2013-06-04

申请号：US13006664

申请日：2011-01-14

Applicant: Christian Lavoie ,  Ahmet S. Ozcan ,  Zhen Zhang ,  Bin Yang

Inventor： Christian Lavoie ,  Ahmet S. Ozcan ,  Zhen Zhang ,  Bin Yang

IPC: H01L23/532

CPC classification number: H01L21/768 ,  H01L21/28518 ,  H01L23/485 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.

公开(公告)号：US20130099835A1

公开(公告)日：2013-04-25

申请号：US13280341

申请日：2011-10-25

Applicant: You-Wen Chang ,  Yi-Sung Chan ,  Jin-Bin Yang ,  Chang-Po Ma

Inventor： You-Wen Chang ,  Yi-Sung Chan ,  Jin-Bin Yang ,  Chang-Po Ma

IPC: H03L7/00

CPC classification number: G11B7/126 ,  G11B20/10222 ,  G11B2220/2537 ,  H03K5/26

Abstract: An exemplary calibration apparatus includes a detecting circuit and a calibrating circuit. The detecting circuit is arranged for generating a detection result by detecting relationship between edges of a plurality of signals generated from a plurality of signal sources, wherein at least one of the edges is a falling edge. The calibrating circuit is coupled to the detecting circuit, and arranged for calibrating at least one of the signal sources according to the detection result. An exemplary calibration method includes the following steps: generating a detection result by detecting relationship between edges of a plurality of signals generated from a plurality of signal sources, wherein at least one of the edges is a falling edge; and calibrating at least one of the signal sources according to the detection result.

Abstract translation: 示例性的校准装置包括检测电路和校准电路。 检测电路被布置成通过检测从多个信号源产生的多个信号的边缘之间的关系来产生检测结果，其中至少一个边缘是下降沿。 校准电路耦合到检测电路，并被安排用于根据检测结果校准至少一个信号源。 示例性校准方法包括以下步骤：通过检测从多个信号源产生的多个信号的边缘之间的关系来产生检测结果，其中至少一个边缘是下降沿; 并根据检测结果校准至少一个信号源。