Semiconductor laser apparatus having an external reflecting means
    164.
    发明授权
    Semiconductor laser apparatus having an external reflecting means 失效
    具有外部反射装置的半导体激光装置

    公开(公告)号:US4803695A

    公开(公告)日:1989-02-07

    申请号:US873991

    申请日:1986-06-13

    CPC classification number: H01S5/14

    Abstract: A semiconductor laser apparatus comprising a semiconductor laser device and a semiconductor device, both of which are fixed on a single mounting base with a spacing of several mm or less therebetween in such a manner that one of the side faces of said semiconductor device faces a laser-emitting facet of said semiconductor laser device in a parallel manner, the side face of said semiconductor device being a facet, at least a part of which is coated with a reflecting dielectric film functioning so as to have laser light from said semiconductor laser device return to said semiconductor laser device therefrom.

    Abstract translation: 一种半导体激光装置,包括半导体激光器件和半导体器件,它们都以一定间隔固定在单个安装基座上,使得半导体器件中的一个面朝向激光器 所述半导体激光器件的刻面是平行的,所述半导体器件的侧面是小面,其至少一部分涂有反射介电膜,该反射介电膜的功能是使来自所述半导体激光器件的激光返回 到达所述半导体激光器件。

    A ring-shaped resonator type semiconductor laser device
    165.
    发明授权
    A ring-shaped resonator type semiconductor laser device 失效
    环形谐振器型半导体激光器件

    公开(公告)号:US4792962A

    公开(公告)日:1988-12-20

    申请号:US910529

    申请日:1986-09-23

    CPC classification number: H01S3/083 H01S5/10 H01S5/1071

    Abstract: A semiconductor laser device comprising: a ring-shaped resonator constituted by a square-shaped optical waveguide composed of four straight optical waveguide sides in which facing sides are positioned in a parallel manner and a reflecting mirror is formed at each of the four corners of said square-shaped optical waveguide in a manner to divide the intersection angle of two each of said four sides at each of said four corners into two equal parts, and a means, for releasing laser light from said ring-shaped resonator, which is disposed on or near a part or the whole area of at least one of said four sides of said square-shaped optical waveguide.

    Abstract translation: 一种半导体激光器件,包括:环形谐振器,由由四个直的光波导侧构成的方形光波导构成,其中相对的侧面以平行的方式定位,并且在所述的四个角中的每一个处形成反射镜 以将所述四个角中的每一个的所述四个侧面中的两个的两个角度的交叉角分成两个相等的方式的方形光波导,以及用于将所述环形谐振器的激光释放的装置, 或者在所述方形光波导的所述四个侧面中的至少一个的一部分或整个区域附近。

    Semiconductor laser device and a method for driving the same
    166.
    发明授权
    Semiconductor laser device and a method for driving the same 失效
    半导体激光装置及其驱动方法

    公开(公告)号:US4791636A

    公开(公告)日:1988-12-13

    申请号:US923953

    申请日:1986-10-28

    CPC classification number: H01S5/0601 H01S5/0035 H01S5/0625

    Abstract: A semiconductor laser device comprising a laser-oscillating optical waveguide composed of a control region which functions to absorb light and main regions which function to oscillate laser light, said control region being positioned in the center portion of said optical waveguide and said main regions being positioned on both ends of said control region, wherein said laser device further comprises a shunting means by which the ratio of the current Ig flowing to said control region to the total current It injected into said laser device is set to meet the inequality (1): ##EQU1## wherein Lg is the length of said control region and Lt is the length of said optical waveguide.

    Abstract translation: 一种半导体激光器件,包括由用于吸收光的控制区域和用于振荡激光的功能的主要区域组成的激光振荡光波导,所述控制区域位于所述光波导的中心部分中,并且所述主区域被定位 在所述控制区域的两端,其中所述激光装置还包括分流装置,通过该分流装置将流入所述控制区域的电流Ig与注入所述激光装置的总电流I i的比率设定为满足不等式(1): (1)其中Lg是所述控制区域的长度,Lt是所述光波导的长度。

    Internal reflector interferometric semiconductor laser device
    167.
    发明授权
    Internal reflector interferometric semiconductor laser device 失效
    内部反射器干涉式半导体激光器件

    公开(公告)号:US4773076A

    公开(公告)日:1988-09-20

    申请号:US878423

    申请日:1986-06-25

    CPC classification number: H01S5/16 H01S5/1021 H01S5/10 H01S5/24

    Abstract: A semiconductor laser device in which a double-heterostructure multi-layered crystal containing an active layer for laser oscillation is formed on a single crystal substrate having a channel composed of alternate channel portions with different widths and lengths, resulting in a plurality of alternate optical waveguides in said active layer corresponding to said alternate channel portions, said optical waveguides being optically coupled therebetween but being electrically separated from each other.

    Abstract translation: 在具有由具有不同宽度和长度的交替沟道部分构成的沟道的单晶衬底上形成含有激光振荡用有源层的双异质结构多层结晶的半导体激光器件,形成多个交替光波导 在对应于所述替代通道部分的所述有源层中,所述光波导在它们之间光学耦合,但彼此电分离。

    Window structure semiconductor laser
    168.
    发明授权
    Window structure semiconductor laser 失效
    窗结构半导体激光器

    公开(公告)号:US4730328A

    公开(公告)日:1988-03-08

    申请号:US787760

    申请日:1985-10-15

    CPC classification number: H01S5/16 H01S5/24

    Abstract: A semiconductor laser comprising a substrate; a current blocking layer formed on said substrate; a striped channel formed in said current blocking layer on said substrate, said striped channel being narrow in the vicinity of the facets and being wide inside of the facets; an active layer, a portion of the active layer corresponds to the narrow portion of said striped channel being a plane to form a window region and another portion of the active layer corresponds to the wide portion of said striped channel being a crescent shape to form a laser operation area with a mesa-structure which is surrounded by burying layers to cut off current leakage from said laser operation area, the width of the mesa-portion of said laser operation area being not less than that of a current injection region formed within said striped channel.

    Abstract translation: 一种包括基板的半导体激光器; 形成在所述衬底上的电流阻挡层; 形成在所述衬底上的所述电流阻挡层中的条纹沟道,所述条纹沟道在小平面附近变窄并且在所述小平面的内部较宽; 有源层,有源层的一部分对应于所述条纹沟道的窄部分,其是形成窗口区域的平面,并且有源层的另一部分对应于所述条纹沟道的宽部分是新月形,以形成 激光操作区域,其具有由掩埋层包围的台面结构,以切断来自所述激光操作区域的电流泄漏,所述激光操作区域的台面部分的宽度不小于形成在所述激光操作区域内的电流注入区域的宽度 条纹通道。

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