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13 条记录 (耗时 0.03 秒)

    Semiconductor laser device and a method for driving the same
    2.
    发明授权
    Semiconductor laser device and a method for driving the same 失效
    半导体激光装置及其驱动方法

    公开(公告)号：US4791636A

    公开(公告)日：1988-12-13

    申请号：US923953

    申请日：1986-10-28

    申请人： Saburo Yamamoto ,  Osamu Yamamoto ,  Taiji Morimoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei

    发明人： Saburo Yamamoto ,  Osamu Yamamoto ,  Taiji Morimoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei

    IPC分类号： H01S5/00 ,  H01S5/06 ,  H01S5/0625 ,  H01S3/19

    CPC分类号： H01S5/0601 ,  H01S5/0035 ,  H01S5/0625

    摘要： A semiconductor laser device comprising a laser-oscillating optical waveguide composed of a control region which functions to absorb light and main regions which function to oscillate laser light, said control region being positioned in the center portion of said optical waveguide and said main regions being positioned on both ends of said control region, wherein said laser device further comprises a shunting means by which the ratio of the current Ig flowing to said control region to the total current It injected into said laser device is set to meet the inequality (1): ##EQU1## wherein Lg is the length of said control region and Lt is the length of said optical waveguide.

    摘要翻译： 一种半导体激光器件，包括由用于吸收光的控制区域和用于振荡激光的功能的主要区域组成的激光振荡光波导，所述控制区域位于所述光波导的中心部分中，并且所述主区域被定位 在所述控制区域的两端，其中所述激光装置还包括分流装置，通过该分流装置将流入所述控制区域的电流Ig与注入所述激光装置的总电流I i的比率设定为满足不等式（1）： （1）其中Lg是所述控制区域的长度，Lt是所述光波导的长度。

    Window structure semiconductor laser
    3.
    发明授权
    Window structure semiconductor laser 失效
    窗结构半导体激光器

    公开(公告)号：US4730328A

    公开(公告)日：1988-03-08

    申请号：US787760

    申请日：1985-10-15

    申请人： Nobuyuki Miyauchi ,  Shigeki Maei ,  Osamu Yamamoto ,  Taiji Morimoto ,  Hiroshi Hayashi ,  Saburo Yamamoto

    发明人： Nobuyuki Miyauchi ,  Shigeki Maei ,  Osamu Yamamoto ,  Taiji Morimoto ,  Hiroshi Hayashi ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/24

    摘要： A semiconductor laser comprising a substrate; a current blocking layer formed on said substrate; a striped channel formed in said current blocking layer on said substrate, said striped channel being narrow in the vicinity of the facets and being wide inside of the facets; an active layer, a portion of the active layer corresponds to the narrow portion of said striped channel being a plane to form a window region and another portion of the active layer corresponds to the wide portion of said striped channel being a crescent shape to form a laser operation area with a mesa-structure which is surrounded by burying layers to cut off current leakage from said laser operation area, the width of the mesa-portion of said laser operation area being not less than that of a current injection region formed within said striped channel.

    摘要翻译： 一种包括基板的半导体激光器; 形成在所述衬底上的电流阻挡层; 形成在所述衬底上的所述电流阻挡层中的条纹沟道，所述条纹沟道在小平面附近变窄并且在所述小平面的内部较宽; 有源层，有源层的一部分对应于所述条纹沟道的窄部分，其是形成窗口区域的平面，并且有源层的另一部分对应于所述条纹沟道的宽部分是新月形，以形成 激光操作区域，其具有由掩埋层包围的台面结构，以切断来自所述激光操作区域的电流泄漏，所述激光操作区域的台面部分的宽度不小于形成在所述激光操作区域内的电流注入区域的宽度 条纹通道。

    Compound resonator type semiconductor laser device
    4.
    发明授权
    Compound resonator type semiconductor laser device 失效
    复合谐振器型半导体激光器件

    公开(公告)号：US4737962A

    公开(公告)日：1988-04-12

    申请号：US734091

    申请日：1985-05-15

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Taiji Morimoto

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Taiji Morimoto

    IPC分类号： H01S3/082 ,  H01S5/028 ,  H01S5/062 ,  H01S5/10 ,  H01S5/24 ,  H01S5/40 ,  H01S3/19 ,  H01S3/10

    CPC分类号： H01S5/24 ,  H01S3/082 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/0622 ,  H01S5/10 ,  H01S5/4056

    摘要： A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, and wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein, and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.

    摘要翻译： 一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，所述第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，所述第二激光器操作区域包含与所述谐振器的谐振器共面的谐振器 第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖 保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面 具有保护膜以在其中获得高反射率。

    Epitaxial growth process for the production of a window semiconductor laser
    5.
    发明授权
    Epitaxial growth process for the production of a window semiconductor laser 失效
    用于生产窗口半导体激光的外延生长工艺

    公开(公告)号：US5087587A

    公开(公告)日：1992-02-11

    申请号：US12249

    申请日：1987-02-09

    申请人： Taiji Morimoto ,  Shigeki Maei ,  Hiroshi Hayashi ,  Saburo Yamamoto

    发明人： Taiji Morimoto ,  Shigeki Maei ,  Hiroshi Hayashi ,  Saburo Yamamoto

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24

    CPC分类号： H01S5/16 ,  H01S5/2232 ,  H01S5/2234 ,  H01S5/24 ,  Y10S148/095

    摘要： A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding to the striped channel of said substrate in each of the window regions in the vicinity of the facets is thinner than that of the portion of the active corresponding to the striped channel of said substrate in the stimulated region positioned between the window regions.

    摘要翻译： 一种窗口半导体激光器件，包括条形沟道衬底，用于激光振荡的有源层和设置在有源层下面的覆层，其中有源层的表面是平坦的，并且有源层的部分的厚度对应于 在小平面附近的每个窗口区域中的每个窗口区域中的所述衬底的条纹沟道比在位于窗口区域之间的被刺激区域中对应于所述衬底的条纹沟道的部分的活性部分的条纹沟道薄。

    External resonator type semiconductor laser
    6.
    发明授权
    External resonator type semiconductor laser 失效
    外部谐振器型半导体激光器

    公开(公告)号：US4829531A

    公开(公告)日：1989-05-09

    申请号：US82659

    申请日：1987-08-07

    申请人： Hidenori Kawanishi ,  Osamu Yamamoto ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Hiroshi Hayashi

    发明人： Hidenori Kawanishi ,  Osamu Yamamoto ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Hiroshi Hayashi

    IPC分类号： H01S5/00 ,  H01S5/068 ,  H01S5/14

    CPC分类号： H01S5/14

    摘要： The external resonator type semiconductor laser of the present invention includes a semiconductor laser element, a reflection member having a reflecting mirror surface for feeding back to the laser element a laser beam emitted from an emitting end surface of the semiconductor laser element, and a mount member for fixedly mounting the laser element and reflection member thereon. The coefficient of linear expansion of the mount member is adapted to be smaller than the coefficient of linear expansion of the semiconductor laser element and reflection member so that the distance between the emitting surface and the reflecting surface (i.e. the external resonator length) decreases with a rise in temperature.

    摘要翻译： 本发明的外部谐振器型半导体激光器包括：半导体激光元件，具有反射镜面的反射部件，反射镜面用于将从半导体激光元件的发光端面射出的激光束向激光元件反射;以及安装部件 用于将激光元件和反射构件固定在其上。 安装构件的线膨胀系数适于小于半导体激光元件和反射构件的线膨胀系数，使得发射表面和反射表面之间的距离（即，外部谐振器长度）随着 温度升高