Abstract:
The device identification apparatus includes: a remote controller signal detecting section for detecting an optical signal from a remote controller; a receiving section for receiving the optical signal from the remote controller; a signal decryption section for decrypting the optical signal received by the receiving section; and a transmitting section for transmitting a device identification signal when the optical signal is a device selecting signal, and configured such that operations of the receiving section, the signal decryption section, and the transmitting section are started in response to a detecting signal of the remote controller signal detecting section, thereby realizing a device identification apparatus in which power consumption during standby is minimized.
Abstract:
The semiconductor device includes the charging system including: electric power generating unit for supplying electric power; electric power storing unit for storing electric power generated by the electric power generating unit; switch unit provided in a charging path for charging the electric power storing unit with the electric power generated by the electric power generating unit; a comparator driven by the electric power generated by the electric power generating unit for comparing a reference voltage and a stored voltage of the electric power storing unit; and a level converter provided between the comparator and the switch unit for, based on a result of a comparison made by the comparator, converting a level of a generated voltage to a level of the stored voltage and outputting a resultant to the switch unit.
Abstract:
There is provided a piezoelectric vibrating piece including: a piezoelectric plate that includes a pair of vibrating arm portions, and a base portion which integrally fixes the base end portions of the pair of vibrating arm portions along a length direction; excitation electrodes which are formed on the vibrating arm portions and vibrate the vibrating arm portions; mounting electrodes which are formed on the base portion and mount the piezoelectric plate on external portions using a joining member; and leading-out electrodes which connect the excitation electrodes and the mounting electrodes, in which the leading-out electrodes are formed by folding back several times between the excitation electrodes and the mounting electrodes.
Abstract:
Provided is a voltage regulator having improved transient response characteristics even when a load current is switched from a light load to a heavy load. The voltage regulator includes, to a gate of a detection transistor constituting an output current detection circuit: a resistive element for interrupting the gate of the detection transistor from an output terminal of a differential amplifier circuit in an AC manner; and a capacitive element connected to an output terminal of the voltage regulator in an AC manner.
Abstract:
Provided is a Co-based alloy for a living body based on Co—Cr—W—Fe, including a composition of Cr: 5% by mass to 30% by mass, W: 5% by mass to 20% by mass, Fe: 1% by mass to 15% by mass, Co as the remainder, and unavoidable impurities. In this alloy, when the content of W is 5% by mass to 10% by mass, the content of Fe can be set to be in a range of 1% by mass to 5% by mass, and when the content of W is 11% by mass to 20% by mass, the content of Fe can be set to be in a range of 3% by mass to 15% by mass.
Abstract:
Provided is a semiconductor device having a vertical MOS transistor and a method of manufacturing the same. The vertical MOS transistor has a trench gate, a distance between a gate electrode and an N-type high concentration buried layer below the gate electrode is formed longer than that in the conventional structure, and a P-type trench bottom surface lower region (5) is formed therebetween. In this manner, when a high voltage is applied to a drain region and 0 V is applied to the gate electrode, the trench bottom surface lower region (5) is depleted, thereby increasing the breakdown voltage in the OFF state.
Abstract:
Provided is a switching regulator including a circuit for detecting a short-circuit state easily and reliably, without the need of an adjustment step such as trimming. In accordance with a drive signal of a power switching element of the switching regulator, a discharge circuit is controlled. When the power switching element is short-circuited and becomes the ON state all the time, the discharge circuit stops its operation, and a capacitor is continuously charged. A voltage detection circuit detects that a charge voltage of the capacitor has reached a predetermined potential, to thereby detect the short-circuit state.
Abstract:
There is provided an electronic timepiece of the invention that includes a solar panel which receives light to generate electric power, is operated with the electric power supplied from a secondary battery charged with an electromotive voltage of the solar panel, and stops a display operation of a display unit with transition to a power saving mode under predetermined conditions, the electronic timepiece including a control unit (mode control unit) which avoids transition from the normal mode to the power saving mode, when a voltage of the secondary battery is equal to or more than a predetermined voltage value.
Abstract:
Provided is a readout circuit for a non-volatile memory device, which has a large readout margin for distinguishing between 0 and 1 of data and has a small circuit area. A voltage output from a single bias circuit is applied to a gate of a memory element and a gate of an NMOS transistor serving as a reference current source to be compared with a current flowing through the memory element. Thus, the gates are controlled by the same voltage, and hence characteristics fluctuations in the operating temperature range and the operating power supply voltage range are reduced. Therefore, a large readout margin for distinguishing 0 and 1 of data can be obtained, resulting in a simplified circuit configuration.
Abstract:
The timing generation circuit includes a binary counter constituted of three T-flip-flop circuits, and a binary state at reset of the binary counter is also used at system reset and in generation of the output pulses, to generate eight output pulses having different timings from eight binary states generated by the binary counter and including the state at the reset. At the system reset, a reset signal to the binary counter is delayed, so that an output of a decoder circuit at the reset of the binary counter is delayed. Therefore, the output of the decoder circuit is masked with a fast reset signal, so that the output of the decoder circuit at the system reset can be prevented from being reflected in an output terminal.