Semiconductor memory device
    161.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US5528545A

    公开(公告)日:1996-06-18

    申请号:US369758

    申请日:1995-01-06

    IPC分类号: G11C11/419 G11C7/06

    CPC分类号: G11C7/062

    摘要: A semiconductor memory device includes a plurality of sense amplifiers for amplifying current changes which occur in corresponding bit line pairs in accordance with binary signals stored in activated memory cells. Each of the sense amplifiers includes first and second current mirror circuits for generating currents of the magnitudes respectively corresponding to currents flowing through a corresponding bit line pair, a storing circuit, responsive to a signal selecting a memory cell, for storing the currents generated by the first and second current mirror circuits before activation of the memory cell, or a difference between these currents, and a current supplying circuit, responsive to activation of the memory cell and based on the amount stored in the storing circuit, for supplying, to the first and second current mirror circuits, currents having a predetermined relationship with the currents having been generated by the first and second current mirror circuits before activation of the memory cell. A current change corresponding to data stored in the selected memory cell and not affected by an offset occurs in a connection node between the first current mirror circuit and the current supplying circuit, or a connection node between the second current mirror circuit and the current supplying circuit.

    摘要翻译: 半导体存储器件包括多个读出放大器,用于根据存储在激活的存储器单元中的二进制信号放大在对应的位线对中发生的电流变化。 每个读出放大器包括第一和第二电流镜电路,用于产生分别对应于流过相应位线对的电流的电流的电流;存储电路,响应于选择存储器单元的信号,用于存储由 在存储单元激活之前的第一和第二电流镜电路,或这些电流之间的差异,以及电流供应电路,响应于存储单元的激活,并且基于存储在存储电路中的量,向第一 和第二电流镜电路,在存储单元激活之前,与由第一和第二电流镜电路产生的电流具有预定关系的电流。 在第一电流镜电路和电流供给电路之间的连接节点或第二电流镜电路和电流供给电路之间的连接节点上发生对应于存储在选择的存储单元中并且不受偏移影响的数据的电流变化 。

    BiCMOS input buffer circuit operable at high speed under less power
consumption
    164.
    发明授权
    BiCMOS input buffer circuit operable at high speed under less power consumption 失效
    BiCMOS输入缓冲电路可在较低功耗下高速运行

    公开(公告)号:US5225717A

    公开(公告)日:1993-07-06

    申请号:US802682

    申请日:1991-12-05

    摘要: An input buffer circuit applicable as a BiCMOS RAM address buffer is disclosed. An improved level shift circuit 59 includes PMOS transistors 14 and 17 for bypassing emitter follower transistors 12 and 15, and NMOS transistors 13 and 16 for constituting a controllable current source Two differential amplifier circuits operating in response to an input signal having an ECL logic amplitude are provided, and emitter follower transistors 12 and 15 are driven by one of them, MOS transistors 13, 14, 16, and 17 are driven by the other. High operating speed is achieved under less current consumption, since emitter follower transistors 12 and 15, and MOS transistors 13, 14, 16, and 17 are driven, respectively.

    摘要翻译: 公开了一种适用于BiCMOS RAM地址缓冲器的输入缓冲电路。 改进的电平移位电路59包括用于旁路射极跟随器晶体管12和15的PMOS晶体管14和17,以及用于构成可控电流源的NMOS晶体管13和16响应于具有ECL逻辑幅度的输入信号而工作的两个差分放大器电路是 并且射极跟随器晶体管12和15由其中之一驱动,MOS晶体管13,14,16和17由另一个驱动。 由于分别驱动射极跟随器晶体管12和15以及MOS晶体管13,14,16和17,所以在较少的电流消耗下实现高工作速度。

    Lid guide structure for sun roof device
    167.
    发明授权
    Lid guide structure for sun roof device 失效
    太阳屋顶装置的盖子导轨结构

    公开(公告)号:US5022705A

    公开(公告)日:1991-06-11

    申请号:US420096

    申请日:1989-10-11

    申请人: Jun Takahashi

    发明人: Jun Takahashi

    IPC分类号: B60J7/02 B60J7/05

    CPC分类号: B60J7/05 B60J7/0084 B60J7/022

    摘要: Disclosed herein is a lid guide structure for a sun roof device. The lid guide structure comprises a first elongate member, and second and third elongate members extending in parallel from longitudinal ends of the first elongate member. Each of the second and third elongate members includes a longitudinally extending gutter portion which is defined between outboard and inboard walls. Mutually facing surfaces of the outboard and inboard walls are each formed at a major flat part thereof with a longitudinally extending channel leaving a longitudinally extending ridge at the upper end of each wall. Each of the longitudinally extending channels is defined by two inclined surfaces, one surface close to the longitudinally extending ridge and one remote from the ridge.

    Radiation-shielding injector for a radio-pharmaceutical liquid
composition
    169.
    发明授权
    Radiation-shielding injector for a radio-pharmaceutical liquid composition 失效
    用于放射性药物液体组合物的辐射屏蔽注射器

    公开(公告)号:US4968305A

    公开(公告)日:1990-11-06

    申请号:US166982

    申请日:1988-03-11

    IPC分类号: A61M5/178 A61M5/31

    CPC分类号: A61M5/1785

    摘要: A kit for the administration of a radiopharmaceutical liquid composition has been developed, which includes a radiation-shielding injector accompanied with a syringe-type vial having a gasket therein, a seal cap and a plunger to be engaged with the gasket. The injector is made of a radiation-shielding tubular metal body covered with a plastic material having an exit at the bottom, the body being further provided with a lead glass window on its curved surface, a packing engaging the inside surface at one end of the body and a pair of wings having skid-proof ridges formed on at least one surface thereof, the wings being located at one end of the body. The body is so designed as to be shorter than the tubular portion of the syringe-type vial to be inserted therein, whereby the rear portion of the vial protrudes a little from the tubular body when the same is inserted into the body.

    摘要翻译: 已经开发了用于施用放射性药物液体组合物的试剂盒,其包括伴随着其中具有垫圈的注射器型小瓶的辐射屏蔽注射器,密封帽和与垫圈接合的柱塞。 注射器由辐射屏蔽管状金属体制成,该金属体覆盖有在底部具有出口的塑料材料,本体还在其弯曲表面上设置有铅玻璃窗,在该表面的一端接合内表面 身体和一对在其至少一个表面上形成有防滑脊的翼,所述翼位于身体的一端。 本体被设计为比要插入其中的注射器型小瓶的管状部分更短,从而当瓶体的后部插入体内时,小瓶的后部从管状体稍微突出。