公开(公告)号：US20140242745A1

公开(公告)日：2014-08-28

申请号：US14272335

申请日：2014-05-07

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1464

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.

Abstract translation: 固态成像装置包括多个光电转换单元，被配置为接收光并产生信号电荷，所述多个光电转换单元以与半导体基板的像素区域中的多个像素对应的方式设置 ; 以及被配置为将由光电转换单元生成的信号电荷作为电信号输出的像素晶体管。 每个像素晶体管至少包括传输晶体管，其将在光电转换单元中产生的信号电荷传送到对应于漏极的浮动扩散。 转移晶体管的栅电极以从沟道形成区域到在半导体衬底的表面上形成光电转换单元的部分之间的栅极绝缘膜延伸的方式形成。

公开(公告)号：US08786742B2

公开(公告)日：2014-07-22

申请号：US13656011

申请日：2012-10-19

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC: H04N3/14 ,  H01L27/146 ,  H01L31/00

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

Abstract: In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

Abstract translation: 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US08704276B2

公开(公告)日：2014-04-22

申请号：US13907111

申请日：2013-05-31

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L31/113

CPC classification number: H01L27/14812 ,  H01L27/146 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/18

Abstract: A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor.

Abstract translation: 固体摄像器件包括半导体衬底; 半导体衬底的第一导电区域; 在所述半导体衬底的所述第一导电区域的上表面侧上的第一导电区域; 在半导体衬底的第一导电区域的上表面侧上的第一导电区域下方的第二导电区域。 固态成像装置还包括光电转换区域，该光电转换区域包括位于半导体衬底的第一导电区域和第二导电区域的上表面侧上的第一导电区域和将在光电转换区域中累积的电荷转移到 读出区域; 以及包括光电转换区域和转移晶体管的像素。 包括在光电转换区域中的第一导电区域延伸到转移晶体管的栅电极的侧壁的下侧。

公开(公告)号：US20140077068A1

公开(公告)日：2014-03-20

申请号：US14087295

申请日：2013-11-22

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Toshifumi Wakano ,  Ken Koseki

IPC: H04N5/357

CPC classification number: H01L27/14612 ,  H01L27/14643 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/3741 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378

Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.

Abstract translation: 一种固态成像装置，其中在像素具有操作周期之前获得的信号线的电位固定在第一电源电位和第二电源电位之间的中间电位。

公开(公告)号：US20140042302A1

公开(公告)日：2014-02-13

申请号：US14031317

申请日：2013-09-19

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC: H04N5/378

CPC classification number: H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

Abstract translation: 固态图像传感器包括像素阵列以及由阵列中的多个像素共享的电荷 - 电压转换器，复位门和放大器。 复位栅极电源的电压设定为高于放大器电源的电压电平。 此外，从像素中的光电检测器溢出的电荷可能被丢弃到电荷 - 电压转换器中。 图像传感器还可以包括行扫描器，其被配置为使得在扫描像素阵列中的行以从其中读出信号的同时，行扫描器在共享具有像素的电荷到电压转换器的像素的光电检测器中复位电荷 读出行。 在从读出行上的像素读出信号的同时或之前进行电荷复位。

公开(公告)号：US20140036115A1

公开(公告)日：2014-02-06

申请号：US14052316

申请日：2013-10-11

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/232

CPC classification number: H04N5/35563 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/23229 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/365 ,  H04N5/37213 ,  H04N5/3742 ,  H04N5/3765 ,  H04N5/378

Abstract: A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.

Abstract translation: 固态成像装置包括像素阵列部分和信号处理部分。 像素阵列部分被配置为包括多个排列的矩形像素，每个矩形像素在垂直和水平方向上具有不同的尺寸，并且其中多个相邻的矩形像素被组合以形成在垂直方向上具有相同尺寸的正方形像素 和水平方向。 信号处理部被配置为执行作为单个信号输出从组合的多个矩形像素读出的多个信号的处理。

公开(公告)号：US20140008703A1

公开(公告)日：2014-01-09

申请号：US14019037

申请日：2013-09-05

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L27/148

CPC classification number: H01L27/14812 ,  H01L27/146 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/18

Abstract: A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor.

Abstract translation: 固体摄像器件包括半导体衬底; 半导体衬底的第一导电区域; 在所述半导体衬底的所述第一导电区域的上表面侧上的第一导电区域; 在半导体衬底的第一导电区域的上表面侧上的第一导电区域下方的第二导电区域。 固态成像装置还包括光电转换区域，该光电转换区域包括位于半导体衬底的第一导电区域和第二导电区域的上表面侧上的第一导电区域和将在光电转换区域中累积的电荷转移到 读出区域; 以及包括光电转换区域和转移晶体管的像素。 包括在光电转换区域中的第一导电区域延伸到转移晶体管的栅电极的侧壁的下侧。