公开(公告)号：US10212376B2

公开(公告)日：2019-02-19

申请号：US15972307

申请日：2018-05-07

申请人： SONY CORPORATION

发明人： Hiroaki Ishiwata

IPC分类号： H04N5/374 ,  H04N5/357 ,  H01L27/146 ,  H04N5/3745

摘要： The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.

公开(公告)号：US10136092B2

公开(公告)日：2018-11-20

申请号：US15690572

申请日：2017-08-30

申请人： Sony Corporation

发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC分类号： H04N3/14 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/353 ,  H04N5/359 ,  H04N5/369 ,  H04N5/378 ,  H01L27/146

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

公开(公告)号：US10015426B2

公开(公告)日：2018-07-03

申请号：US15815415

申请日：2017-11-16

申请人： SONY CORPORATION

发明人： Hiroaki Ishiwata

IPC分类号： H04N5/232 ,  G03B13/00 ,  H04N5/369 ,  H01L27/146 ,  H04N9/04 ,  H04N5/374 ,  H04N5/357

CPC分类号： H04N5/3696 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/374 ,  H04N9/045

摘要： The present technology relates to a solid-state imaging element, a driving method therefor, and an electronic apparatus, by which the characteristics of phase-difference pixels can be made constant irrespective of a chip position.In a pixel array section, a normal pixel including a photodiode (PD) that receives and photoelectrically converts incident light such that a color component signal is obtained, and a phase-difference pixel including a pair of a photodiode (PD1) and a photodiode (PD2) including light-receiving surfaces having a size depending on an image height such that a phase difference detection signal is obtained are arranged in a matrix form. The pair of the photodiode (PD1) and the photodiode (PD2) each include a first region serving as a charge accumulation main part and a second region that performs photoelectric conversion and contributes to charge transfer to the main part. The present technology is applicable to a CMOS image sensor, for example.

公开(公告)号：US09924119B2

公开(公告)日：2018-03-20

申请号：US15582218

申请日：2017-04-28

申请人： Sony Corporation

发明人： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC分类号： H04N5/369 ,  H04N5/3745 ,  H04N5/347 ,  H01L27/146

CPC分类号： H04N5/3696 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/347 ,  H04N5/37452 ,  H04N5/37457

摘要： A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US09781371B2

公开(公告)日：2017-10-03

申请号：US14957278

申请日：2015-12-02

申请人： Sony Corporation

发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC分类号： H04N5/335 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/353 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

公开(公告)号：US09653499B2

公开(公告)日：2017-05-16

申请号：US15156564

申请日：2016-05-17

申请人： Sony Corporation

发明人： Hiroaki Ishiwata

IPC分类号： H01L27/146 ,  H04N5/225 ,  H04N5/3745 ,  H04N5/347 ,  H04N9/04 ,  H04N5/357 ,  H04N5/369

CPC分类号： H01L27/14612 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/347 ,  H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/37457 ,  H04N9/045

摘要： A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.

公开(公告)号：US10325954B2

公开(公告)日：2019-06-18

申请号：US15018840

申请日：2016-02-08

申请人： SONY CORPORATION

发明人： Hiroaki Ishiwata

IPC分类号： H01L27/146

摘要： A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of the pixels, amplifies the generated charge in the photoelectric conversion portion, and outputs a level of signal corresponding to the charge, wherein the a predetermined number of the pixels which share the amplifying portion are arranged in a first direction extending along a signal line via which the amplifying portion outputs the signal, and wherein a length of an area where the amplifying portion is formed along a second direction substantially intersecting the first direction is set to be equal to or more than a length of one pixel and to be less than a length of two pixels in the second direction.

公开(公告)号：US20180007306A1

公开(公告)日：2018-01-04

申请号：US15690572

申请日：2017-08-30

申请人： Sony Corporation

发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC分类号： H04N5/3745 ,  H04N5/374 ,  H04N5/353 ,  H04N5/359 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

公开(公告)号：US09620554B2

公开(公告)日：2017-04-11

申请号：US14831642

申请日：2015-08-20

申请人： SONY CORPORATION

发明人： Hiroaki Ishiwata

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647

摘要： A solid-state image pickup unit includes substrate; a red pixel including a red charge storage section; a blue pixel including a blue charge storage section; and a green pixel including a plurality of green charge storage sections, the red charge storage section and the blue charge storage section being provided in the substrate. Then, the plurality of green charge storage sections are arranged in the substrate along a thickness direction of the substrate.

公开(公告)号：US09247172B2

公开(公告)日：2016-01-26

申请号：US14031317

申请日：2013-09-19

申请人： Sony Corporation

发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC分类号： H04N5/335 ,  H04N5/378 ,  H01L27/146 ,  H04N5/353 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.