公开(公告)号：US06448717B1

公开(公告)日：2002-09-10

申请号：US09617199

申请日：2000-07-17

Applicant: Robert T. Rasmussen

Inventor： Robert T. Rasmussen

IPC: H01J162

CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

Abstract translation: 本发明包括场发射器，场致发射显示器（FED），监视器，计算机系统以及采用该系统的方法来从FED装置的阴极提供均匀的电子束。 这些装置各自包括电子束均匀性电路。 电子束均匀性电路提供具有足以诱导来自阴极的场发射的DC偏移电压的VGrid电压和叠加在DC偏移电压上的周期信号，以便以足够快的速度改变电网电压，使其不能被 人类的眼睛。 阴极可以是微尖或扁平的品种。 周期信号可以是正弦曲线，其中峰 - 峰电压介于约5伏至约50伏之间。

公开(公告)号：US20020121864A1

公开(公告)日：2002-09-05

申请号：US10137553

申请日：2002-05-02

Inventor： Robert T. Rasmussen

IPC: G09G003/10

CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

公开(公告)号：US20020098765A1

公开(公告)日：2002-07-25

申请号：US10077529

申请日：2002-02-14

Inventor： David A. Cathey JR. ,  John Lee

IPC: H01J009/24

CPC classification number: H01J9/025 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

公开(公告)号：US06420827B1

公开(公告)日：2002-07-16

申请号：US09513064

申请日：2000-02-24

Applicant: Chan-Jae Lee ,  Chun-Gyoo Lee ,  Tae-Young Ko

Inventor： Chan-Jae Lee ,  Chun-Gyoo Lee ,  Tae-Young Ko

IPC: H01J162

CPC classification number: H01J1/3042 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission display includes first and second substrates spaced apart from each other with a predetermined distance. The top surface of the first substrate faces the bottom surface of the second substrate. A main cathode electrode layer is disposed on the top surface of the first substrate. A gate electrode layer is arranged over the main cathode electrode layer such that the gate electrode layer and the main cathode electrode layer intersect to be orthogonal to each other. The intersection of the gate electrode layer and the main cathode electrode layer becomes to be unit pixel areas. The gate electrode layer has a plurality of holes at the unit pixel areas. A resistance layer is formed on the main cathode electrode layer while being positioned at the unit pixel areas. A first insulation layer with one or more contact holes is formed on the resistance layer. A subsidiary cathode electrode layer is formed on the first insulation layer while contacting the resistance layer through the contact holes. A second insulation layer is formed on the subsidiary cathode electrode layer. The gate electrode layer is formed on the second insulation layer. A field emitter with a plurality of electron emitting members is positioned within the holes of the gate electrode layer while resting on the subsidiary cathode electrode layer. An anode electrode layer is formed on the bottom surface of the second substrate with a predetermined electrode pattern. A phosphor layer is formed on the anode electrode layer.

Abstract translation: 场发射显示器包括彼此间隔开预定距离的第一和第二基片。 第一基板的顶表面面向第二基板的底表面。 主阴极电极层设置在第一基板的顶表面上。 在主阴极电极层上设置栅极电极层，使得栅电极层和主阴极电极层相交成相互正交。 栅电极层和主阴极电极层的交点成为单位像素区域。 栅电极层在单位像素区域具有多个孔。 在主阴极电极层上形成电阻层，同时位于单位像素区域。 具有一个或多个接触孔的第一绝缘层形成在电阻层上。 在第一绝缘层上形成辅助阴极电极层，同时通过接触孔与电阻层接触。 第二绝缘层形成在辅助阴极电极层上。 栅电极层形成在第二绝缘层上。 具有多个电子发射部件的场致发射体定位在栅电极层的孔内，同时放置在辅助阴极电极层上。 阳极电极层以预定的电极图案形成在第二基板的底表面上。 在阳极电极层上形成荧光体层。

公开(公告)号：US06417605B1

公开(公告)日：2002-07-09

申请号：US09159245

申请日：1998-09-23

Applicant: James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

Inventor： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC: H01J1304

CPC classification number: H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device. The method includes the formation of radiation blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

Abstract translation: 用于稳定有源矩阵场发射器件中的阈值电压的装置和方法。 该方法包括在FED的阴极发光显示屏和形成在FED的基板之间的半导体结之间形成辐射阻挡元件。

公开(公告)号：US06404113B1

公开(公告)日：2002-06-11

申请号：US09487671

申请日：2000-01-20

Applicant: Akihiko Okamoto

Inventor： Akihiko Okamoto

IPC: H01J130

CPC classification number: H01J1/3044 ,  H01J2201/319 ,  H01J2329/00

Abstract: Semiconductor layers are formed on a substrate, and an insulating film is formed on the semiconductor layers. On the insulating film is formed a gate electrode, which has emitter holes formed therein. In the emitter holes are formed emitters, which are provided with emitter electrodes via the semiconductor layers. The emitters are grouped into a plurality of emitter groups each having at least one emitter. The emitters of each of the emitter groups are connected to each of the semiconductor layers. Common electrodes are formed across the semiconductor layers via the insulating film. Thereby, a field emission type cold cathode element is obtained which has nonlinear characteristics of providing a low resistance in normal operation and a high resistance upon discharges.

Abstract translation: 在衬底上形成半导体层，在半导体层上形成绝缘膜。 在绝缘膜上形成有在其中形成发射孔的栅电极。 在发射极孔中形成发射体，其经由半导体层设置有发射极电极。 发射器被分组成多个发射极组，每个具有至少一个发射极。 每个发射极组的发射极连接到每个半导体层。 通过绝缘膜跨越半导体层形成公共电极。 由此，得到具有在正常工作时提供低电阻和放电时的高电阻的非线性特性的场发射型冷阴极元件。

公开(公告)号：US20020042241A1

公开(公告)日：2002-04-11

申请号：US10012615

申请日：2001-12-12

Inventor： David S. Y. Hsu

IPC: H01J009/24

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，使其适用于需要高发射电流的场发射显示器，高压功率开关，微波，RF放大等应用。

公开(公告)号：US20020036452A1

公开(公告)日：2002-03-28

申请号：US09739739

申请日：2000-12-20

Inventor： Masakazu Muroyama ,  Ichiro Saito ,  Kouji Inoue ,  Takao Yagi

IPC: H01J001/00

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/319

Abstract: A cold cathode field emission device comprising (a) a cathode electrode formed on a supporting substrate, and (b) a gate electrode which is formed above the cathode electrode and has an opening portion, and further comprising (c) an electron emitting portion composed of a carbon film formed on a surface of a portion of the cathode electrode which portion is positioned in a bottom portion of the opening portion.

Abstract translation: 一种冷阴极场发射器件，包括：（a）形成在支撑衬底上的阴极电极，和（b）形成在所述阴极电极上并具有开口部分的栅电极，并且还包括（c）电子发射部分， 形成在阴极电极的一部分表面上的碳膜，该部分位于开口部分的底部。

公开(公告)号：US06356250B1

公开(公告)日：2002-03-12

申请号：US09640826

申请日：2000-08-16

Applicant: David A. Cathey ,  Glen E. Hush ,  Manny K. F. Ma ,  Craig M. Dunham ,  David A. Zimlich

Inventor： David A. Cathey ,  Glen E. Hush ,  Manny K. F. Ma ,  Craig M. Dunham ,  David A. Zimlich

IPC: G09G328

CPC classification number: H01J31/127 ,  H01J3/022 ,  H01J2201/319 ,  H01J2329/92

Abstract: A field emission display includes electrostatic discharge protection circuits coupled to an emitter substrate and an extraction grid. In the preferred embodiment, the electrostatic discharge circuit includes diodes reverse biased between grid sections and a first reference potential or between row lines and a second reference potential. The diodes provide a current path to discharge static voltage and thereby prevent a high voltage differential from being maintained between the emitter sets and the extraction grids. The diodes thereby prevent the emitter sets from emitting electrons at a high rate that may damage or destroy the emitter sets. In one embodiment, the diodes are coupled directly between the grid sections and the row lines. In one embodiment, the diodes are formed in an insulative layer carrying the grid sections. In another embodiment, the diodes are integrated into the emitter substrate.

Abstract translation: 场发射显示器包括耦合到发射极衬底和提取栅极的静电放电保护电路。 在优选实施例中，静电放电电路包括在网格部分和第一参考电位之间或在行线和第二参考电位之间反向偏置的二极管。 二极管提供电流路径来放电静电压，从而防止在发射极组和提取栅之间保持高电压差。 因此，二极管可防止发射极组以可能损坏或破坏发射极组的高速率发射电子。 在一个实施例中，二极管直接连接在网格部分和行线之间。 在一个实施例中，二极管形成在承载网格部分的绝缘层中。 在另一个实施例中，二极管被集成到发射器衬底中。

公开(公告)号：US06344378B1

公开(公告)日：2002-02-05

申请号：US09260231

申请日：1999-03-01

Applicant: Ji Ung Lee ,  John Lee ,  Benham Moradi

Inventor： Ji Ung Lee ,  John Lee ,  Benham Moradi

IPC: H01L21337

CPC classification number: H01L29/78618 ,  H01J9/025 ,  H01J2201/319

Abstract: The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.

Abstract translation: 本发明包括场效应晶体管，场发射装置，薄膜​​晶体管和形成场效应晶体管的方法。 根据一个实施例，场效应晶体管包括被配置为形成沟道区的半导体层; 一对间隔导电掺杂的半导体区域，与半导体层的沟道区域电连接; 半导体区域中间的栅极; 以及在所述半导体层和所述栅极之间的栅极电介质层，所述栅极电介质层被配置为使所述栅极与所述半导体层的沟道区域对准。 在一个方面，化学机械抛光使栅极与沟道区域自对准。 根据另一方面，场发射器件包括被配置为控制来自发射极的电子的发射的晶体管。