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    POLLING METHOD OF PIEZOELECTRIC ELEMENT AND METHOD OF MANUFACTURING INERTIAL SENSOR USING THE SAME
    171.
    发明申请
    POLLING METHOD OF PIEZOELECTRIC ELEMENT AND METHOD OF MANUFACTURING INERTIAL SENSOR USING THE SAME 有权
    压电元件的抛光方法及使用其制造惯性传感器的方法

    公开(公告)号：US20120159754A1

    公开(公告)日：2012-06-28

    申请号：US13178162

    申请日：2011-07-07

    Applicant: Heung Woo Park ,  Seung Hun Han ,  Jung Won Lee

    Inventor： Heung Woo Park ,  Seung Hun Han ,  Jung Won Lee

    IPC: H01L41/22

    CPC classification number: H01L41/257 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49007

    Abstract: Disclosed herein is a method of manufacturing an inertial sensor using a polling method of a piezoelectric element performing a polling after packaging the piezoelectric element, the method of manufacturing an inertial sensor including: forming a driving electrode and a sensing electrode on a flexible substrate on which a piezoelectric material is deposited; electrically connection the driving electrode and the sensing electrode; packaging the flexible substrate; polling by applying voltage and heat to the driving electrode and the sensing electrode; and electrically separating the driving electrode from the sensing electrode by applying heat to the driving electrode and the sensing electrode.

    Abstract translation: 本文公开了一种制造惯性传感器的方法，该惯性传感器使用在封装压电元件之后执行轮询的压电元件的轮询方法，制造惯性传感器的方法包括：在柔性基板上形成驱动电极和感测电极， 沉积压电材料; 电连接驱动电极和感测电极; 包装柔性基材; 通过向驱动电极和感测电极施加电压和热量来轮询; 以及通过向驱动电极和感测电极施加热量来使驱动电极与感测电极分离。

    Image reading device and image forming apparatus having the same
    172.
    发明授权
    Image reading device and image forming apparatus having the same 有权
    图像读取装置和具有该图像读取装置的图像形成装置

    公开(公告)号：US08208182B2

    公开(公告)日：2012-06-26

    申请号：US11972165

    申请日：2008-01-10

    Applicant: Dong Hun Han

    Inventor： Dong Hun Han

    IPC: H04N1/04

    CPC classification number: H04N1/203 ,  H04N1/12 ,  H04N1/193 ,  H04N1/2032 ,  H04N2201/0081 ,  H04N2201/0458

    Abstract: An image reading device and an image forming apparatus having the same that can increase a scan quality by improving mounting positions of units to read information recorded on a document and a mounting structure of a light shielding member. The image reading device may include a first reading unit to read image information recorded on a first surface of a document, a second reading unit disposed at a predetermined distance from the first reading unit along a document feeding direction to read image information recorded on a second surface of the document, and at least one light shielding member mounted between the first reading unit and the second reading unit along the document feeding direction. The light shielding member may extend in a direction different from the document feeding direction such that one end portion is located in a document feeding path. The light shielding member may be provided with a document guide portion to guide the document.

    Abstract translation: 一种图像读取装置和具有该图像读取装置和图像形成装置的图像形成装置，其可以通过改善装置的安装位置来提高扫描质量，从而读取记录在文件上的信息和遮光构件的安装结构。 图像读取装置可以包括：第一读取单元，用于读取记录在文档的第一表面上的图像信息;第二读取单元，沿着原稿输送方向设置在距离第一读取单元预定距离处，以读取记录在第二个 文件的表面以及沿文件输入方向安装在第一读取单元和第二读取单元之间的至少一个遮光构件。 遮光构件可以在与原稿输送方向不同的方向上延伸，使得一个端部位于文件馈送路径中。 遮光构件可以设置有引导文件的文件引导部。

    FEMTO BS FOR REDUCING INTER-CELL INTERFERENCE AND METHOD FOR TRANSMITTING SIGNAL USING THE SAME
    173.
    发明申请
    FEMTO BS FOR REDUCING INTER-CELL INTERFERENCE AND METHOD FOR TRANSMITTING SIGNAL USING THE SAME 失效
    用于减少细胞间干扰的FEMTO BS和使用其发送信号的方法

    公开(公告)号：US20120122444A1

    公开(公告)日：2012-05-17

    申请号：US13028706

    申请日：2011-02-16

    Applicant: Sung Guk Yoon ,  Jong Hun Han ,  Sae Woong Bahk ,  Young Han Kim ,  Ik Hyeon Kim

    Inventor： Sung Guk Yoon ,  Jong Hun Han ,  Sae Woong Bahk ,  Young Han Kim ,  Ik Hyeon Kim

    IPC: H04W4/00

    CPC classification number: H04W24/02

    Abstract: A signal transmission method includes determining whether there is a User Equipment (UE) within an area of the femto BS, determining whether the UE is in an active mode, operating in a first mode of alternating a first Available Interval (AI) with a first UnAvailable Interval (UAI) in time, if no UE exists within the area of the femto BS, operating in a second mode of alternating a second AI with a second UAI shorter than the first UAI in time, if a UE exists within the area of the femto BS and operates in an inactive mode and operating in a third mode of continuously transmitting a signal, if a UE exists within the area of the femto BS and operates in the active mode.

    Abstract translation: 一种信号传输方法，包括确定毫微微BS的区域内是否存在用户设备（UE），确定UE是否处于活动模式，以第一模式操作，第一模式与第一可用间隔（AI） 如果在毫微微BS的区域内没有UE存在，则在时间上不可用间隔（UAI），如果UE存在于第二模式的区域内，则以与第一UAI短于第一UAI的第二AI交替的第二模式工作 毫微微BS并且如果UE存在于毫微微BS的区域内并且以活动模式操作，则以非活动模式操作并且以连续发送信号的第三模式操作。

    RECHARGEABLE LITHIUM BATTERY
    174.
    发明申请
    RECHARGEABLE LITHIUM BATTERY 失效
    可充电锂电池

    公开(公告)号：US20120107667A1

    公开(公告)日：2012-05-03

    申请号：US13220962

    申请日：2011-08-30

    Applicant: Hye-Sun Jeong ,  Jun-Kyu Cha ,  Seung-Hun Han ,  Kwi-Seok Choi

    Inventor： Hye-Sun Jeong ,  Jun-Kyu Cha ,  Seung-Hun Han ,  Kwi-Seok Choi

    IPC: H01M2/16 ,  H01M10/052 ,  B82Y30/00

    CPC classification number: C01G53/50 ,  H01M2/145 ,  H01M2/1646 ,  H01M2/1653 ,  H01M2/1686 ,  H01M10/0525

    Abstract: A rechargeable lithium battery includes a positive electrode including a positive active material; a negative electrode including a negative active material; an electrolyte including a lithium salt and a non-aqueous organic solvent; and a separator interposed between the positive and negative electrodes and including a ceramic material having a first metal oxide-containing core and a second metal oxide shell disposed on the surface of the core.

    Abstract translation: 可再充电锂电池包括：正极，包括正极活性材料; 包含负极活性物质的负极; 包含锂盐和非水有机溶剂的电解质; 以及插入在所述正极和负极之间并且包括具有设置在所述芯的表面上的具有第一含金属氧化物的芯和第二金属氧化物壳的陶瓷材料的隔板。

    VOLTAGE RANGE DETERMINATION CIRCUIT AND METHODS THEREOF
    176.
    发明申请
    VOLTAGE RANGE DETERMINATION CIRCUIT AND METHODS THEREOF 审中-公开
    电压范围确定电路及其方法

    公开(公告)号：US20110062925A1

    公开(公告)日：2011-03-17

    申请号：US12851667

    申请日：2010-08-06

    Applicant: Byung-Hun HAN ,  Seung-Hoon BAEK

    Inventor： Byung-Hun HAN ,  Seung-Hoon BAEK

    IPC: G05F1/10

    CPC classification number: G09G3/3696

    Abstract: A voltage range determination circuit may include an object voltage generating unit that generates an object voltage corresponding to a scaled-down voltage of an input voltage based on the input voltage, a selection voltage generating unit that generates a first selection voltage and a second selection voltage that is greater than the first selection voltage based on a reference voltage, a comparison voltage selecting unit that selects one of the first selection voltage and the second selection voltage as a comparison voltage based on an output signal, and an output signal generating unit that compares the object voltage with the comparison voltage to generate the output signal.

    Abstract translation: 电压范围确定电路可以包括：对象电压生成单元，其基于输入电压生成与输入电压的按比例缩小的电压对应的目标电压;选择电压生成单元，其生成第一选择电压和第二选择电压 大于基于参考电压的第一选择电压;比较电压选择单元，其基于输出信号选择第一选择电压和第二选择电压之一作为比较电压;以及输出信号生成单元，其比较 对象电压与比较电压产生输出信号。

    Image sensor and method for manufacturing the same
    177.
    发明授权
    Image sensor and method for manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US07883922B2

    公开(公告)日：2011-02-08

    申请号：US12046134

    申请日：2008-03-11

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L21/00

    CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

    Abstract: An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel.

    Abstract translation: 一种具有增加的纵横比的图像传感器和图像传感器的制造方法。 用于制造具有相对较大的处理余量（例如甚至高水平像素）的图像传感器的图像传感器和方法，其可以减少和/或消除降低图像传感器的限制。 图像传感器可以包括包括第一传输晶体管的第一单位像素，包括第二驱动晶体管的第二单位像素和将第一单位像素的浮动扩散区电连接到第二驱动晶体管的第二驱动晶体管中的至少一个 第二单位像素。 一种制造图像传感器的方法，包括形成包括第一转移晶体管的第一单位像素，形成包括第二驱动晶体管的第二单位像素和形成将第一单位像素的浮动扩散区域电连接的接点中的至少一个， 第二单位像素的第二驱动晶体管。

    Photodiode of CMOS image sensor and method for manufacturing the same
    179.
    发明授权
    Photodiode of CMOS image sensor and method for manufacturing the same 失效
    CMOS图像传感器的光电二极管及其制造方法

    公开(公告)号：US07732245B2

    公开(公告)日：2010-06-08

    申请号：US11319591

    申请日：2005-12-29

    Applicant: Chang Hun Han

    Inventor： Chang Hun Han

    IPC: H01L21/00

    CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    Abstract: A photodiode of a CMOS image sensor and a method for manufacturing the same are provided, in which ions implanted in the vicinity of a device isolation film are prevented from being diffused into a photodiode region to reduce a dark current. The photodiode of a CMOS image sensor includes a heavily doped P-type semiconductor substrate, a lightly doped P-type epitaxial layer formed on the semiconductor substrate, a gate electrode formed on the epitaxial layer, a device isolation film and an N-type photodiode region formed in the epitaxial layer, an insulating film formed on the epitaxial layer to open a portion between the device isolation film and the photodiode region, and a heavily doped P-type diffusion region formed in the epitaxial layer between the device isolation film and the photodiode region.

    Abstract translation: 提供CMOS图像传感器的光电二极管及其制造方法，其中防止注入到器件隔离膜附近的离子扩散到光电二极管区域以减少暗电流。 CMOS图像传感器的光电二极管包括重掺杂P型半导体衬底，形成在半导体衬底上的轻掺杂P型外延层，形成在外延层上的栅电极，器件隔离膜和N型光电二极管 形成在所述外延层中的绝缘膜，形成在所述外延层上以打开所述器件隔离膜和所述光电二极管区域之间的部分的绝缘膜，以及形成在所述器件隔离膜和所述光电二极管区域之间的外延层中的重掺杂P型扩散区域 光电二极管区域。

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