公开(公告)号：US06261902B1

公开(公告)日：2001-07-17

申请号：US08925490

申请日：1997-09-08

Applicant: Eun Jeong Park ,  Sung Chul Lee

Inventor： Eun Jeong Park ,  Sung Chul Lee

IPC: H01L21336

CPC classification number: H01L27/11521 ,  H01L21/743 ,  H01L27/115

Abstract: A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insualting layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insualting layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.

Abstract translation: 一种半导体器件，其中在初始工艺步骤中使用多晶硅来形成源极和漏极区域，以便降低位线的电阻并最小化结电容，从而提高其可靠性，并且公开了一种其制造方法 包括半导体衬底的器件，形成在半导体衬底的预定区域中的沟槽，形成在沟槽中并在衬底的表面下方的绝缘层，具有凹槽，形成在沟槽中的绝缘层上的多晶硅层，源极和漏极 形成在半导体衬底的表面下方的多晶硅层的两侧的区域以及形成在半导体衬底上的栅极。

公开(公告)号：US06207506B1

公开(公告)日：2001-03-27

申请号：US09348463

申请日：1999-07-07

Applicant: Sang Bae Yi ,  Jin Won Park ,  Sung Chul Lee

Inventor： Sang Bae Yi ,  Jin Won Park ,  Sung Chul Lee

IPC: H01L21335

CPC classification number: H01L21/28282 ,  H01L29/792

Abstract: Nonvolatile memory capable of programming and erasure and method for fabricating the same, the method comprising the steps of (1) forming an oxide film on a first conduction type semiconductor substrate, (2) conducting an annealing in an NO or N2O ambient to convert the oxide film into a vertical lamination of a first silicon oxynitride region containing nitrogen and a second silicon oxynitride region containing relatively less nitrogen compared to the first silicon oxynitride region formed on the substrate, (3) patterning a gate electrode on the second oxynitride region, (4) forming second conduction type source, and drain impurity diffusion regions in surfaces of the substrate on both sides of the gate electrode, whereby facilitating a simple and easy fabrication process, a low programming voltage, a high performance, and a high device reliability.

Abstract translation: 能够编程和擦除的非易失性存储器及其制造方法，所述方法包括以下步骤：（1）在第一导电型半导体衬底上形成氧化膜，（2）在NO或N2O环境中进行退火以将 氧化膜形成垂直叠层的第一氮氧化物区域和与形成在衬底上的第一氧氮化硅区域相比氮含量相对较少的第二氮氧化硅区域，（3）在第二氧氮化物区域上形成栅电极的图案（ 4）形成第二导电型源极，并且在栅电极两侧的衬底表面中漏极杂质扩散区域，从而简化制造工艺，低编程电压，高性能和高器件可靠性。

公开(公告)号：US09508925B2

公开(公告)日：2016-11-29

申请号：US14816410

申请日：2015-08-03

Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/222 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract translation: 提供了一种磁存储器件。 磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层 。

公开(公告)号：US20140231941A1

公开(公告)日：2014-08-21

申请号：US14182660

申请日：2014-02-18

Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

IPC: H01L43/02

CPC classification number: H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/325 ,  H01F10/3286 ,  H01L27/228

Abstract: Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices, include a plurality of free layers each having a magnetization direction that is changeable, a separation layer covering at least two of the plurality of free layers, and at least one pinned layer opposing the plurality of free layers. The separation layer is between the at least one pinned layer and the plurality of free layers. The at least one pinned layer has a magnetization direction that is fixed.

Abstract translation: 磁阻结构，包括其的存储器件以及制造磁阻结构和存储器件的方法包括多个具有可变化的磁化方向的自由层，分离层覆盖多个自由层中的至少两个， 以及与多个自由层相对的至少一个钉扎层。 分离层位于至少一个钉扎层和多个自由层之间。 所述至少一个钉扎层具有固定的磁化方向。

公开(公告)号：US20140211552A1

公开(公告)日：2014-07-31

申请号：US14162144

申请日：2014-01-23

Applicant: Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

Inventor： Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/18 ,  H01L27/222 ,  H01L43/08

Abstract: A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.

Abstract translation: 使用旋转门厅效应的存储器件以及制造和操作存储器件的方法包括将第一工作电流施加到存储器件的位线，使得自旋电流被施加到耦合到磁性隧道结（MTJ）的单元 由于位线中的材料而导致位线，其中位线经由MTJ单元电连接到字线，并且字线与位线相交。

公开(公告)号：US08754717B2

公开(公告)日：2014-06-17

申请号：US13096627

申请日：2011-04-28

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H03B15/00 ,  B82Y25/00

CPC classification number: H03B15/006 ,  B82Y25/00

Abstract: An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

Abstract translation: 提供了振荡器及其操作方法，振荡器可以包括自由层，自由层的第一表面上的钉扎层和自由层的第二表面上的参考层。 自由层可以具有可变的磁化方向。 被钉扎层可以具有钉扎的磁化方向。 参考层可以具有与被钉扎层的磁化方向不平行的磁化方向。

公开(公告)号：US08614014B2

公开(公告)日：2013-12-24

申请号：US12662215

申请日：2010-04-06

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

IPC: G11B5/66 ,  G11C19/02

CPC classification number: G11B5/72 ,  G11B5/7325 ,  G11C11/14

Abstract: A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).

Abstract translation: 一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。 两个非磁性层中的一个包括原子序数大于或等于12的元素。因此，磁性层具有相对高的非绝热性（β）。

公开(公告)号：US08580408B2

公开(公告)日：2013-11-12

申请号：US11946333

申请日：2007-11-28

Applicant: Yong-su Kim ,  Sung-chul Lee

Inventor： Yong-su Kim ,  Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808

Abstract: An apparatus for moving a magnetic domain wall and a memory device using a magnetic field application unit are provided. The apparatus for moving a magnetic domain wall includes a magnetic layer having a plurality of magnetic domains; current supply units that are disposed on both sides of the magnetic layer and supply current to the magnetic layer; and a magnetic field application unit that is disposed on at least one surface of the magnetic layer and applies a magnetic field to the magnetic layer.

Abstract translation: 提供一种使用磁场施加单元移动磁畴壁和存储装置的装置。 用于移动磁畴壁的装置包括具有多个磁畴的磁性层; 电流供给单元，其设置在磁性层的两侧并向磁性层供给电流; 以及设置在所述磁性层的至少一个表面上并向所述磁性层施加磁场的磁场施加单元。

公开(公告)号：US08526288B2

公开(公告)日：2013-09-03

申请号：US13297713

申请日：2011-11-16

Applicant: Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

Inventor： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

IPC: G11B7/00

CPC classification number: G11C13/06 ,  G02B5/008 ,  G02F2203/10

Abstract: An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

Abstract translation: 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。

公开(公告)号：US08427246B2

公开(公告)日：2013-04-23

申请号：US12929932

申请日：2011-02-25

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H01L29/00

CPC classification number: H01L43/12 ,  H01L43/08 ,  H03B15/006

Abstract: Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

Abstract translation: 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。