公开(公告)号：US20080128783A1

公开(公告)日：2008-06-05

申请号：US12027771

申请日：2008-02-07

Applicant: Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/66825 ,  H01L29/7881

Abstract: A split-gate non-volatile memory device includes a raised oxide layer on a field oxide region between adjacent split-gate memory cells, the raised oxide layer extending onto first and second floating gates included in the adjacent split-gate memory cells covered by a wordline electrically coupled to respective control gates included in the adjacent split-gate memory cells.

Abstract translation: 分闸非易失性存储器件包括在相邻的分裂栅极存储器单元之间的场氧化物区域上的凸起的氧化物层，所述凸起的氧化物层延伸到包括在相邻的分离栅极存储器单元中的第一和第二浮动栅极上， 字线电耦合到相邻分离门存储器单元中包括的相应控制门。

公开(公告)号：US20080097631A1

公开(公告)日：2008-04-24

申请号：US10571755

申请日：2004-01-20

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

IPC: G06F17/00

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

Abstract: The present invention discloses a home network system (1) which can provide an efficient address system for home appliances by using a dynamic address field selectively including at least two different kinds of logical address codes. The home network system (1) includes at least one slave device (40), and a master device (30) connected to the slave devices (40) through a predetermined network (20), the master device (30) and the slave device (40) distinguishing each other by an address field including a dynamic address field selectively having at least two different kinds of logical address codes to distinguish a plurality of slave devices (40) and master devices (30).

Abstract translation: 本发明公开了一种家庭网络系统（1），其可以通过使用选择性地包括至少两种不同类型的逻辑地址码的动态地址字段来为家用电器提供有效的地址系统。 家庭网络系统（1）包括至少一个从设备（40）和通过预定网络（20）连接到从设备（40）的主设备（30），主设备（30）和从设备 （40）通过包括选择性地具有至少两种不同种类的逻辑地址码的动态地址字段的地址字段进行区分，以区分多个从设备（40）和主设备（30）。

公开(公告)号：US20080027566A1

公开(公告)日：2008-01-31

申请号：US10560253

申请日：2004-05-28

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

IPC: H04L29/06 ,  G06F17/00

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

Abstract: The present invention discloses a home network system (100) which uses a message structure for efficient communication between a plurality of home appliances. The home network system (100) includes at least one slave device (60, 70, 80), and at least one master device (50) connected to the slave device (60, 70, 80) through a network (90), for transmitting a request message to the slave device (60, 70, 80), wherein the request message is transmitted from an upper layer of the master device (50) to a lower layer thereof and from a lower layer of the slave device (60, 70, 80) to an upper layer thereof, and has a command code implying an operation which will be executed by the slave device (60, 70, 80), and a related argument for executing the operation.

Abstract translation: 本发明公开了一种家庭网络系统（100），其使用消息结构来在多个家用电器之间进行有效的通信。 家庭网络系统（100）包括至少一个从设备（60,70,80）以及通过网络（90）连接到从设备（60,70,80）的至少一个主设备（50），用于 向所述从设备（60,70,80）发送请求消息，其中所述请求消息从所述主设备（50）的上层发送到其下层，并且从所述从设备（60， 70,80）到其上层，并且具有指示将由从设备（60,70,80）执行的操作的命令代码和用于执行该操作的相关参数。

公开(公告)号：US07297596B2

公开(公告)日：2007-11-20

申请号：US11552359

申请日：2006-10-24

Applicant: Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

Inventor： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

IPC: H01L21/336

CPC classification number: H01L21/823437 ,  H01L21/823481

Abstract: A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

Abstract translation: 提供能够抑制空穴迁移的半导体器件。 半导体器件包括在基本上垂直于字线延伸的第二方向的第一方向上延伸的虚拟区域。 此外，隔离层图案可以不在第二方向上切割伪区域。 因此，防止虚拟区域的倾斜和空隙迁移。 还提供了制造半导体器件的方法。

公开(公告)号：US20070257567A1

公开(公告)日：2007-11-08

申请号：US11744380

申请日：2007-05-04

Applicant: Yong Tae Kim

Inventor： Yong Tae Kim

IPC: H02K5/24 ,  G11B5/016 ,  G11B17/02

CPC classification number: H02K5/24 ,  G11B19/2018 ,  H02K1/2786 ,  H02K5/1675 ,  H02K7/14 ,  Y10T74/2111

Abstract: Embodiments of a profile motor are provided. A spindle motor can include a base in contact with a bearing housing, a bearing installed in the bearing housing, a rotational shaft rotatably supported by the bearing, a stator disposed around the bearing housing and having a coil, a rotor including a rotor yoke fixed on the rotational shaft and a magnet fixed on the rotor yoke, a turntable provided above the rotor yoke and rotating together with the rotational shaft, and a plurality of balls provided in a space defined by the rotor yoke and the turntable.

Abstract translation: 提供了轮廓马达的实施例。 主轴电动机可以包括与轴承壳体接触的基座，安装在轴承壳体中的轴承，由轴承可旋转地支撑的旋转轴，设置在轴承壳体周围并具有线圈的定子，转子包括固定的转子轭 旋转轴和固定在转子轭上的磁体，设置在转子轭上方并与旋转轴一起旋转的转台，以及设置在由转子轭和转台限定的空间中的多个球。

公开(公告)号：US20070170491A1

公开(公告)日：2007-07-26

申请号：US11698658

申请日：2007-01-26

Applicant: Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Yong-Tae Kim ,  Seung-Jin Yang ,  Hyok-Ki Kwon

Inventor： Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Yong-Tae Kim ,  Seung-Jin Yang ,  Hyok-Ki Kwon

IPC: H01L29/788

CPC classification number: H01L29/42336 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7881

Abstract: a nonvolatile memory device Includes an active region defined in a semiconductor substrate and a control gate electrode crossing over the active region. A gate insulating layer is interposed between the control gate electrode and the active reigon. A floating gate is formed in the active region to penetrate the control gate electrode and extend to a predetermined depth into the semiconductor substrate. A tunnel insulating layer is successively interposed between the control gate electrode and the floating gate, and between the semiconductor substrate and the floating gate. The floating gate may be formed after a trench is formed by sequentially etching a control gate conductive layer and the semiconductor substrate, and a tunnel insulating layer is formed on the trench and sidewalls of the control gate conductive layer. The floating gate is formed in the trench to extend into a predetermined depth into the semiconductor substrate.

Abstract translation: 非易失性存储器件包括限定在半导体衬底中的有源区和跨越有源区的控制栅电极。 栅极绝缘层介于控制栅极电极和活性电极之间。 在有源区中形成浮栅，以穿透控制栅电极并延伸到预定深度进入半导体衬底。 隧道绝缘层被连续插入在控制栅电极和浮栅之间以及半导体衬底和浮栅之间。 可以在通过顺序蚀刻控制栅极导电层和半导体衬底形成沟槽之后形成浮置栅极，并且在控制栅极导电层的沟槽和侧壁上形成隧道绝缘层。 浮动栅极形成在沟槽中，以延伸到预定深度进入半导体衬底。

公开(公告)号：US20070169074A1

公开(公告)日：2007-07-19

申请号：US10562701

申请日：2003-07-07

Applicant: Ja-In Koo ,  Feel-Young Koo ,  Hwan-Jong Choi ,  Seong-Hwan Kang ,  Yong-Tae Kim ,  Koon-Seok Lee ,  Seung-Myun Baek

Inventor： Ja-In Koo ,  Feel-Young Koo ,  Hwan-Jong Choi ,  Seong-Hwan Kang ,  Yong-Tae Kim ,  Koon-Seok Lee ,  Seung-Myun Baek

IPC: G06F9/44

CPC classification number: H04L67/34 ,  G06F8/65 ,  H04L12/2803 ,  H04L12/2814 ,  H04L12/66 ,  H04L2012/2845 ,  H04L2012/285

Abstract: The present invention discloses an upgrade apparatus and its method for a home network system which can automatically upgrade software. The upgrade apparatus for the home network system is installed in the home network system having a first storage unit in which at least one protected program has been installed, and includes n upgrade means for deciding whether a second storage unit separated from the first storage unit stores an upgrade file corresponding to the protected program, and upgrading the protected program by using the upgrade file according to the decision result.

Abstract translation: 本发明公开了一种可以自动升级软件的家庭网络系统升级装置及其方法。 用于家庭网络系统的升级装置安装在具有第一存储单元的家庭网络系统中，其中已经安装了至少一个受保护的程序，并且包括n个升级装置，用于确定与第一存储单元分离的第二存储单元是否存储 与受保护程序相对应的升级文件，并根据决策结果使用升级文件对受保护程序进行升级。

公开(公告)号：US07221028B2

公开(公告)日：2007-05-22

申请号：US10899371

申请日：2004-07-26

Applicant: Tae-kwang Yu ,  Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

Inventor： Tae-kwang Yu ,  Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC: H01L29/72

CPC classification number: H01L29/66659 ,  H01L21/26586 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/7835

Abstract: The present invention relates to a high voltage transistor and method of manufacturing the same. The high voltage transistor includes: a channel region which is formed in a semiconductor substrate; a gate insulating film which is formed on the channel region of the semiconductor substrate; a low concentration source region and a low concentration drain region having the channel region interposed therebetween and each being formed in the semiconductor substrate; a high concentration source region which is formed to be spaced away from the channel region by a first distance; a high concentration drain region which is formed to be spaced away from the channel region by a second distance that is larger than the first distance; a gate electrode which has a gate bottom portion interfacing with the gate insulating film over the channel region, and a gate top portion integrated with the gate bottom portion and protruding by a predetermined length from a top of the gate bottom portion to extend over the low concentration drain region; a first metal silicide layer which is formed on the high concentration source region; and a second metal silicide layer which is formed on the high concentration drain region.

Abstract translation: 本发明涉及高压晶体管及其制造方法。 高压晶体管包括：形成在半导体衬底中的沟道区; 形成在半导体衬底的沟道区上的栅极绝缘膜; 低浓度源极区和低浓度漏极区，其间具有沟道区，并且各自形成在半导体衬底中; 高浓度源区，其形成为与沟道区隔开第一距离; 高浓度漏区，其形成为与沟道区隔开距离大于第一距离的第二距离; 栅极电极，其具有与沟道区域上的栅极绝缘膜接合的栅极底部，以及与栅极底部一体化并且从栅极底部的顶部突出预定长度的栅极顶部，以在低于 浓度排水区; 形成在高浓度源区上的第一金属硅化物层; 以及形成在高浓度漏极区上的第二金属硅化物层。

公开(公告)号：US20070111451A1

公开(公告)日：2007-05-17

申请号：US11650237

申请日：2007-01-05

Applicant: Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

Inventor： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

IPC: H01L21/336

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/42328

Abstract: A flash memory device including a tunnel dielectric layer, a floating gate layer, an interlayer dielectric layer and at least two mold layers formed on a semiconductor substrate and a method of manufacturing the same are provided. By sequentially patterning the layers, a first mold layer pattern and a floating gate layer pattern aligned with each other are formed. Exposed portions of side surfaces of the first mold layer pattern are selectively lateral etched, thereby forming a first mold layer second pattern having grooves in its sidewalls. A gate dielectric layer is formed on the semiconductor substrate adjacent to the floating gate layer pattern. A control gate having a width that is determined by the grooves in the second mold layer pattern is formed on the gate dielectric layer. By removing the first mold layer second pattern, spacers are formed on sidewalls of the control gate. Exposed portions of the interlayer dielectric layer and the floating gate layer pattern are selectively etched, using the spacer as an etch mask to form a floating gate having a width defined by the widths of the groove and spacer.

Abstract translation: 提供一种包括隧道介电层，浮栅，层间电介质层和形成在半导体衬底上的至少两个模层的闪存器件及其制造方法。 通过顺序地图案化这些层，形成彼此对准的第一模具层图案和浮动栅极层图案。 选择性地横向蚀刻第一模具层图案的侧表面的暴露部分，从而在其侧壁中形成具有凹槽的第一模具层第二图案。 栅极电介质层形成在与浮动栅层图案相邻的半导体衬底上。 具有由第二模层图案中的凹槽确定的宽度的控制栅极形成在栅介质层上。 通过去除第一模具层第二图案，在控制门的侧壁上形成间隔物。 使用间隔物作为蚀刻掩模来选择性地蚀刻层间电介质层和浮栅层图案的暴露部分，以形成具有由沟槽和间隔物的宽度限定的宽度的浮动栅极。

公开(公告)号：US20070104091A1

公开(公告)日：2007-05-10

申请号：US11595752

申请日：2006-11-09

Applicant: Sang Yeoun Lee ,  Yong Tae Kim ,  Kwang Suk Song ,  Bong Tae Kim

Inventor： Sang Yeoun Lee ,  Yong Tae Kim ,  Kwang Suk Song ,  Bong Tae Kim

IPC: G06F11/00 ,  H04J1/16

CPC classification number: H04L49/1523 ,  H04L41/0213 ,  H04L49/351 ,  H04L49/557

Abstract: An apparatus for providing duplicated shelf managers in an ATCA system is provided. The apparatus for providing duplicated shelf managers includes a hub/switch in a control backplane to allow a manager to access the duplicated shelf managers all the time from an external network while maintaining the switch configuration defined of the ATCA specification. The hub/switch connects Ethernet ports of the duplicated two shelf managers and Ethernet ports of the two switches at the same time, and connects the two shelf managers and the two switches to the Internet.

Abstract translation: 提供了一种在ATCA系统中提供重复的货架管理器的装置。 用于提供重复的货架管理器的装置包括控制背板中的集线器/交换机，以允许管理者在保持由ATCA规范定义的交换机配置的同时从外部网络一直访问复制的货架管理器。 集线器/交换机同时连接两台交换机的重复两个机箱管理器和以太网端口的以太网端口，并将两个机柜管理器和两个交换机连接到Internet。