公开(公告)号：US08295424B2

公开(公告)日：2012-10-23

申请号：US12649142

申请日：2009-12-29

申请人： Woo Jae Choi ,  Sang Ho Woo ,  Mi Youn Kim

发明人： Woo Jae Choi ,  Sang Ho Woo ,  Mi Youn Kim

IPC分类号： H04L23/00

CPC分类号： H04L25/0292 ,  G09G3/20 ,  G09G2330/06 ,  G09G2370/08 ,  H04L7/0008

摘要： A data receiving apparatus and method includes a current-voltage conversion block, which receives a current-type transmit signal including data and a clock signal inserted into the data at a different level from the data, and then converts the received signal into at least one first voltage and at least one second voltage having a different level from the first voltage, and a comparison block, which makes a comparison between the first and second voltages, and then outputs the received signal as one of the data and the clock signal based on a result of the comparison. The data receiving apparatus can easily recover a clock signal while exhibiting better characteristics during the recovery of the clock signal because it is insensitive to a variation in reference voltage and a variation in current at the transmitting state of the timing controller, which are caused by a process variation.

摘要翻译： 数据接收装置和方法包括电流 - 电压转换块，其接收包含数据的当前类型的发送信号和插入与数据不同的电平的数据中的时钟信号，然后将接收到的信号转换成至少一个 第一电压和至少一个具有与第一电压不同的电平的第二电压，以及比较块，其进行第一和第二电压之间的比较，然后将接收信号作为数据和时钟信号之一输出，基于 比较的结果。 数据接收装置可以容易地恢复时钟信号，同时在恢复时钟信号期间表现出更好的特性，因为它对参考电压的变化和时序控制器的发送状态下的电流变化不敏感，这是由 过程变化。

公开(公告)号：US20120164821A1

公开(公告)日：2012-06-28

申请号：US13337748

申请日：2011-12-27

申请人： Joon-Sung KIM ,  Hye-Soo SHIN ,  Mi-Youn KIM ,  Young-Soo KIM

发明人： Joon-Sung KIM ,  Hye-Soo SHIN ,  Mi-Youn KIM ,  Young-Soo KIM

IPC分类号： H01L21/8239 ,  H01L21/768

CPC分类号： H01L21/0273 ,  H01L21/28282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11575 ,  H01L27/11582

摘要： A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.

摘要翻译： 制造半导体器件的方法可以包括：交替地在衬底上堆叠电介质层和导电层以形成堆叠结构，在堆叠结构上形成第一光致抗蚀剂图案，形成厚度随着第二光致抗蚀剂图案而减小的第二光致抗蚀剂图案 通过对第一光致抗蚀剂图案进行热处理，从堆叠结构的中心向着堆叠结构的周边延伸，通过第二光致抗蚀剂图案蚀刻堆叠结构，以在堆叠结构上形成斜面，其厚度减小为 倾斜轮廓从堆叠结构的中心延伸到层叠结构的周边，并且通过选择性地蚀刻介电层而在堆叠结构的端部上形成阶梯型轮廓。

公开(公告)号：US07297596B2

公开(公告)日：2007-11-20

申请号：US11552359

申请日：2006-10-24

申请人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

发明人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

IPC分类号： H01L21/336

CPC分类号： H01L21/823437 ,  H01L21/823481

摘要： A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

摘要翻译： 提供能够抑制空穴迁移的半导体器件。 半导体器件包括在基本上垂直于字线延伸的第二方向的第一方向上延伸的虚拟区域。 此外，隔离层图案可以不在第二方向上切割伪区域。 因此，防止虚拟区域的倾斜和空隙迁移。 还提供了制造半导体器件的方法。

公开(公告)号：US08426299B2

公开(公告)日：2013-04-23

申请号：US13337748

申请日：2011-12-27

申请人： Joon-Sung Kim ,  Hye-Soo Shin ,  Mi-Youn Kim ,  Young-Soo Kim

发明人： Joon-Sung Kim ,  Hye-Soo Shin ,  Mi-Youn Kim ,  Young-Soo Kim

IPC分类号： H01L21/4763

CPC分类号： H01L21/0273 ,  H01L21/28282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11575 ,  H01L27/11582

摘要： A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.

摘要翻译： 制造半导体器件的方法可以包括：交替地在衬底上堆叠电介质层和导电层以形成堆叠结构，在堆叠结构上形成第一光致抗蚀剂图案，形成厚度随着第二光致抗蚀剂图案而减小的第二光致抗蚀剂图案 通过对第一光致抗蚀剂图案进行热处理，从堆叠结构的中心向着堆叠结构的周边延伸，通过第二光致抗蚀剂图案蚀刻堆叠结构，以在堆叠结构上形成斜面，其厚度减小为 倾斜轮廓从堆叠结构的中心延伸到层叠结构的周边，并且通过选择性地蚀刻介电层而在堆叠结构的端部上形成阶梯型轮廓。

公开(公告)号：US07465988B2

公开(公告)日：2008-12-16

申请号：US11871876

申请日：2007-10-12

申请人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

发明人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/823437 ,  H01L21/823481

摘要： A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

摘要翻译： 提供能够抑制空穴迁移的半导体器件。 半导体器件包括在基本上垂直于字线延伸的第二方向的第一方向上延伸的虚拟区域。 此外，隔离层图案可以不在第二方向上切割伪区域。 因此，防止虚拟区域的倾斜和空隙迁移。 还提供了制造半导体器件的方法。

公开(公告)号：US20100166117A1

公开(公告)日：2010-07-01

申请号：US12649142

申请日：2009-12-29

申请人： Woo Jae Choi ,  Sang Ho Woo ,  Mi Youn Kim

发明人： Woo Jae Choi ,  Sang Ho Woo ,  Mi Youn Kim

IPC分类号： H04L27/06

CPC分类号： H04L25/0292 ,  G09G3/20 ,  G09G2330/06 ,  G09G2370/08 ,  H04L7/0008

摘要： A data receiving apparatus and method includes a current-voltage conversion block, which receives a current-type transmit signal including data and a clock signal inserted into the data at a different level from the data, and then converts the received signal into at least one first voltage and at least one second voltage having a different level from the first voltage, and a comparison block, which makes a comparison between the first and second voltages, and then outputs the received signal as one of the data and the clock signal based on a result of the comparison. The data receiving apparatus can easily recover a clock signal while exhibiting better characteristics during the recovery of the clock signal because it is insensitive to a variation in reference voltage and a variation in current at the transmitting state of the timing controller, which are caused by a process variation.

摘要翻译： 数据接收装置和方法包括电流 - 电压转换块，其接收包含数据的当前类型的发送信号和插入与数据不同的电平的数据中的时钟信号，然后将接收到的信号转换成至少一个 第一电压和至少一个具有与第一电压不同的电平的第二电压，以及比较块，其进行第一和第二电压之间的比较，然后将接收信号作为数据和时钟信号之一输出，基于 比较的结果。 数据接收装置可以容易地恢复时钟信号，同时在恢复时钟信号期间表现出更好的特性，因为它对参考电压的变化和时序控制器的发送状态下的电流变化不敏感，这是由 过程变化。

公开(公告)号：US20070108516A1

公开(公告)日：2007-05-17

申请号：US11552359

申请日：2006-10-24

申请人： Sung-Sam LEE ,  Yong-Tae KIM ,  Mi-Youn KIM ,  Gyo-Young JIN ,  Dae-Won HA ,  Yun-Gi KIM

发明人： Sung-Sam LEE ,  Yong-Tae KIM ,  Mi-Youn KIM ,  Gyo-Young JIN ,  Dae-Won HA ,  Yun-Gi KIM

IPC分类号： H01L29/94

CPC分类号： H01L21/823437 ,  H01L21/823481

摘要： A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

摘要翻译： 提供能够抑制空穴迁移的半导体器件。 半导体器件包括在基本上垂直于字线延伸的第二方向的第一方向上延伸的虚拟区域。 此外，隔离层图案可以不在第二方向上切割伪区域。 因此，防止虚拟区域的倾斜和空隙迁移。 还提供了制造半导体器件的方法。

公开(公告)号：US20090147030A1

公开(公告)日：2009-06-11

申请号：US12259600

申请日：2008-10-28

申请人： Woo Jae Choi ,  Jong Kee Kim ,  Mi Youn Kim

发明人： Woo Jae Choi ,  Jong Kee Kim ,  Mi Youn Kim

IPC分类号： G09G5/10

CPC分类号： G09G3/3696 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2320/0233

摘要： A liquid crystal display (LCD) driver integrated circuit (IC) is provided. The LCD driver IC, according to an embodiment, can include gamma reference buffers built in respective source drivers, where an output connection resistance is provided for connecting an output of a gamma reference buffer of one source driver to an output of a gamma reference buffer of another source driver.

摘要翻译： 提供了液晶显示（LCD）驱动器集成电路（IC）。 根据实施例的LCD驱动器IC可以包括内置在各个源极驱动器中的伽马参考缓冲器，其中提供输出连接电阻用于将一个源极驱动器的伽马参考缓冲器的输出连接到伽玛参考缓冲器 另一个源驱动。

公开(公告)号：US20080036016A1

公开(公告)日：2008-02-14

申请号：US11871876

申请日：2007-10-12

申请人： Sung-Sam LEE ,  Yong-Tae KIM ,  Mi-Youn KIM ,  Gyo-Young JIN ,  Dae-Won HA ,  Yun-Gi KIM

发明人： Sung-Sam LEE ,  Yong-Tae KIM ,  Mi-Youn KIM ,  Gyo-Young JIN ,  Dae-Won HA ,  Yun-Gi KIM

IPC分类号： H01L29/78

CPC分类号： H01L21/823437 ,  H01L21/823481

摘要： A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

摘要翻译： 提供能够抑制空穴迁移的半导体器件。 半导体器件包括在基本上垂直于字线延伸的第二方向的第一方向上延伸的虚拟区域。 此外，隔离层图案可以不在第二方向上切割伪区域。 因此，防止虚拟区域的倾斜和空隙迁移。 还提供了制造半导体器件的方法。