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    Method of manufacturing a semiconductor device having a switching function
    1.
    发明授权
    Method of manufacturing a semiconductor device having a switching function 有权
    具有切换功能的半导体装置的制造方法

    公开(公告)号：US07297596B2

    公开(公告)日：2007-11-20

    申请号：US11552359

    申请日：2006-10-24

    申请人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

    发明人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823437 ,  H01L21/823481

    摘要： A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

    摘要翻译： 提供能够抑制空穴迁移的半导体器件。 半导体器件包括在基本上垂直于字线延伸的第二方向的第一方向上延伸的虚拟区域。 此外，隔离层图案可以不在第二方向上切割伪区域。 因此，防止虚拟区域的倾斜和空隙迁移。 还提供了制造半导体器件的方法。

    Method of manufacturing semiconductor device
    3.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08426299B2

    公开(公告)日：2013-04-23

    申请号：US13337748

    申请日：2011-12-27

    申请人： Joon-Sung Kim ,  Hye-Soo Shin ,  Mi-Youn Kim ,  Young-Soo Kim

    发明人： Joon-Sung Kim ,  Hye-Soo Shin ,  Mi-Youn Kim ,  Young-Soo Kim

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/0273 ,  H01L21/28282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11575 ,  H01L27/11582

    摘要： A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.

    摘要翻译： 制造半导体器件的方法可以包括：交替地在衬底上堆叠电介质层和导电层以形成堆叠结构，在堆叠结构上形成第一光致抗蚀剂图案，形成厚度随着第二光致抗蚀剂图案而减小的第二光致抗蚀剂图案 通过对第一光致抗蚀剂图案进行热处理，从堆叠结构的中心向着堆叠结构的周边延伸，通过第二光致抗蚀剂图案蚀刻堆叠结构，以在堆叠结构上形成斜面，其厚度减小为 倾斜轮廓从堆叠结构的中心延伸到层叠结构的周边，并且通过选择性地蚀刻介电层而在堆叠结构的端部上形成阶梯型轮廓。