公开(公告)号：US5939732A

公开(公告)日：1999-08-17

申请号：US862102

申请日：1997-05-22

Applicant: Anthony D. Kurtz ,  Jonathan E. Spanier

Inventor： Anthony D. Kurtz ,  Jonathan E. Spanier

IPC: H01L33/10 ,  H01L33/34 ,  H01L33/40 ,  H01L33/00 ,  H01L31/0312

CPC classification number: H01L33/34 ,  H01L33/105 ,  H01L33/405

Abstract: A multilayered LED structure which has an active light-emitting layer of porous silicon carbide and a sequence of layers of porous silicon carbide underneath which serves as a quarter-wavelength multilayer mirror. The result is the electroluminescent emission of spectrally narrow visible light in the deep blue to UV range, in a highly directed pattern. The deep, intense blue luminescence is accomplished via the appropriate preparation and passivation of a single porous silicon carbide layer, followed by the deposition of a transparent, semiconducting layer, such as ITO (In.sub.2 O.sub.3) or ZnO.

Abstract translation: 一种多层LED结构，其具有多孔碳化硅的活性发光层和下面的多孔碳化硅层，其用作四分之一波长多层反射镜。 结果是在深蓝色到紫外线范围内的光谱窄的可见光的电致发光发射，以高度定向的方式。 通过合适的单个多孔碳化硅层的制备和钝化，然后沉积透明的半导体层，例如ITO（In 2 O 3）或ZnO，可以实现深而强烈的蓝色发光。

公开(公告)号：US5614678A

公开(公告)日：1997-03-25

申请号：US596506

申请日：1996-02-05

Applicant: Anthony D. Kurtz ,  Andrew V. Bemis ,  Timothy A. Nunn ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Andrew V. Bemis ,  Timothy A. Nunn ,  Alexander A. Ned

IPC: G01L9/00 ,  G01L9/06

CPC classification number: G01L9/0055

Abstract: A method of fabricating a high pressure piezoresistive pressure transducer having a substantially linear pressure versus stress output over its full range of operation. The method involves bonding a carrier wafer having a dielectric isolating layer on one surface and a supporting member on the opposite surface, to a pattern wafer containing at least two single crystalline longitudinal piezoresistive sensing elements of a second conductivity. Both the pattern wafer and sections of the carrier wafer are etched leaving the piezoresistive sensing elements bonded directly to the dielectric isolating layer, and a diaphragm member having a deflecting portion and a non-deflecting portion. The diaphragm member is constructed to have an aspect ratio which is of the order of magnitude of one. The piezoresistive sensing elements have a large transverse piezoresistive coefficient normal to the plane of the diaphragm and both a large longitudinal piezoresistive coefficient and a small transverse piezoresistive coefficient in the plane of the diaphragm. One of the at least two piezoresistive sensing elements is positioned above the non-deflection portion of the diaphragm in an area of minimal longitudinal stress and the other is positioned above the deflecting portion of the diaphragm in an area of high compressive stress. The positioning of the second sensor over the deflecting portion of the diaphragm is selected so that there will be equal and opposite resistance changes registered from the sensors. The method results in an improved transducer design when compared to prior art devices.

Abstract translation: 一种制造高压压阻式压力传感器的方法，该压力传感器在其全部操作范围内具有基本线性的压力与应力输出。 该方法包括将具有介电隔离层的载体晶片和相对表面上的支撑构件结合到包含至少两个具有第二导电性的单晶纵向压阻式感测元件的图案晶片。 蚀刻晶片和载体晶片的两个部分，留下直接结合到绝缘隔离层的压阻感测元件，以及具有偏转部分和非偏转部分的隔膜部件。 隔膜构件被构造成具有一个数量级的纵横比。 压阻感测元件具有垂直于隔膜平面的大的横向压阻系数，并且在隔膜平面中具有大的纵向压阻系数和小的横向压阻系数。 至少两个压阻感测元件中的一个在最小纵向应力的区域中位于隔膜的非偏转部分上方，另一个位于隔膜的偏转部分的高压缩应力区域的上方。 选择第二传感器在隔膜的偏转部分上的定位，使得从传感器注册相同和相反的阻力变化。 与现有技术的装置相比，该方法导致改进的换能器设计。

公开(公告)号：US5604144A

公开(公告)日：1997-02-18

申请号：US444962

申请日：1995-05-19

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L9/00 ,  H01L21/265

CPC classification number: G01L9/0042 ,  Y10S438/96 ,  Y10S438/977

Abstract: A method for fabricating semiconductor device comprises the steps of providing a substrate formed from a semiconductor material of a first conductivity type and converting a selected portion of the substrate to a porous semiconductor material. This partially forms a membrane-like structure of non-porous semiconductor material on the substrate. The porous semiconductor material is then oxidized to form a rigid layer of oxide material under the partially formed membrane-like structure. After forming the porous oxide material one or more integrated circuit elements can be fabricated on the partially formed membrane-like structure without fracturing it because rigid layer of oxide material operates to support it during the fabrication of the integrated circuit elements. Once the integrated circuit elements are fabricated, all or part of the rigid layer of oxide material is removed to complete the membrane-like structure and allow it to deflect in response to a force applied thereto.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：提供由第一导电类型的半导体材料形成的衬底，并将衬底的选定部分转换成多孔半导体材料。 这在基板上部分地形成无孔半导体材料的膜状结构。 然后在部分形成的膜状结构下，多孔半导体材料被氧化以形成氧化物材料的刚性层。 在形成多孔氧化物材料之后，可以在部分形成的膜状结构上制造一个或多个集成电路元件，而不会使其断裂，因为刚性层的氧化物材料在制造集成电路元件期间操作以支持它。 一旦制造了集成电路元件，则去除氧化物材料的刚性层的全部或部分以完成膜状结构并使其响应于施加到其上的力而偏转。

公开(公告)号：US5543349A

公开(公告)日：1996-08-06

申请号：US448034

申请日：1995-05-23

Applicant: Anthony D. Kurtz ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Alexander A. Ned

IPC: G01L9/00 ,  H01L21/3205

CPC classification number: G01L9/0019 ,  Y10S148/012

Abstract: A pressure transducer comprising at least one diaphragm formed in a wafer of semiconducting material, the at least one diaphragm being spaced from a first surface of the wafer, a first layer of semiconducting material disposed over the at least one diaphragm, the first layer forming at least one resonating beam over the at least one diaphragm, and a plurality of resistor elements formed from a third layer of semiconducting material disposed over the at least one resonating beam, and isolation means for dielectrically isolating the at least one resonating beam from the at least one diaphragm.

Abstract translation: 一种压力传感器，包括形成在半导体材料晶片中的至少一个光阑，所述至少一个光阑与所述晶片的第一表面间隔开，设置在所述至少一个光阑上的第一层半导体材料，所述第一层形成在 在所述至少一个隔膜上的至少一个谐振束，以及由设置在所述至少一个谐振束上的第三层半导体材料形成的多个电阻元件，以及隔离装置，用于将所述至少一个谐振束与所述至少一个谐振束 一个隔膜

公开(公告)号：US4672354A

公开(公告)日：1987-06-09

申请号：US804761

申请日：1985-12-05

Applicant: Anthony D. Kurtz ,  Timothy A. Nunn ,  Richard A. Weber

Inventor： Anthony D. Kurtz ,  Timothy A. Nunn ,  Richard A. Weber

IPC: G01L1/22 ,  G01L9/00 ,  H01L21/306 ,  B44C1/22 ,  G01B7/16 ,  H01C17/00

CPC classification number: G01L1/2293 ,  G01L9/0042 ,  Y10S73/04 ,  Y10T29/42 ,  Y10T29/49103

Abstract: There is disclosed apparatus and methods of fabricating a piezoresistive semiconductor structure for use in a transducer. According to one method, a layer of silicon dioxide is grown over the surface of a first semiconductor wafer which is designated as a carrier wafer. A layer of glas is then formed on the top surface of the carrier wafer over said layer of silicon dioxide. A second wafer has diffused therein a high conductivity semiconductor layer which is diffused on a top surface of a sacrificial semiconductor wafer. The first and second wafers are then bonded together by means of an electrostatic bond with the high conductivity layer of the sacrificial wafer facing the glass layer of the first wafer. After securing the wafers together, one may etch away the remaining portion of the sacrificial wafer to provide a high conductivity resistive layer which is secured to the glass layer of the first wafer and is patterned to form a resistive network using standard photolithographic making. In another embodiment, the sacrificial wafer is processed by means of a high conductivity diffusion procedure whereby a resistive line pattern is formed in the second wafer. After diffusion, the second wafer is etched so that the high conductivity pattern projects from the top surface. This top surface consisting of the projected high conductivity resistive pattern is then bonded to the glass layer of the second wafer. After bonding the two wafers together, the unwanted N-type regions of the sacrificial wafer are etched away using a conductivity selective etch to form the resistive pattern.

Abstract translation: 公开了制造用于换能器的压阻半导体结构的装置和方法。 根据一种方法，在指定为载体晶片的第一半导体晶片的表面上生长二氧化硅层。 然后在载体晶片的顶表面上形成一层玻璃，该层在二氧化硅层上。 第二晶片在其中扩散了在牺牲半导体晶片的顶表面上扩散的高导电性半导体层。 第一和第二晶片然后通过与第一晶片的玻璃层的牺牲晶片的高电导率层的静电键结合在一起。 在将晶片固定在一起之后，可以蚀刻掉牺牲晶片的剩余部分，以提供固定到第一晶片的玻璃层的高导电性电阻层，并使用标准光刻制作来形成电阻网络。 在另一个实施例中，牺牲晶片通过高电导率扩散程序进行处理，由此在第二晶片中形成电阻线图案。 在扩散之后，蚀刻第二晶片，使得高导电性图案从顶表面突出。 然后将由投影的高导电性电阻图形组成的顶表面结合到第二晶片的玻璃层。 在将两个晶片结合在一起之后，使用电导率选择性蚀刻将牺牲晶片的不想要的N型区域蚀刻掉以形成电阻图案。

公开(公告)号：US4476726A

公开(公告)日：1984-10-16

申请号：US409537

申请日：1982-08-19

Applicant: Anthony D. Kurtz ,  Joseph R. Mallon ,  Timothy A. Nunn

Inventor： Anthony D. Kurtz ,  Joseph R. Mallon ,  Timothy A. Nunn

IPC: G01L9/00 ,  G01L9/06

CPC classification number: G01L9/0054

Abstract: A bridge array employing piezoresistive sensors responsive to the longitudinal piezoresistive effect generally exhibits a positive nonlinearity over a pressure range, while a bridge array employing piezoresistive sensors employing the transverse piezoresistive effect exhibits a negative nonlinearity over the pressure range. A composite pressure transducer is provided by interconnecting a longitudinal and transverse bridge array in a common composite configuration. The resulting transducer exhibits linear operation over the pressure range due to the cancellation of said nonlinearities from the connected arrays.

Abstract translation: 使用响应于纵向压阻效应的压阻式传感器的桥式阵列通常在压力范围内呈现正的非线性，而采用压阻式传感器的桥式阵列采用横向压阻效应，在压力范围内呈现负的非线性。 复合压力传感器通过将公共复合结构中的纵向和横向桥接阵列相互连接来提供。 由于所连接的阵列的所述非线性的消除，所得的换能器在压力范围内呈现线性运行。

公开(公告)号：US4467656A

公开(公告)日：1984-08-28

申请号：US472850

申请日：1983-03-07

Applicant: Joseph R. Mallon ,  Anthony D. Kurtz

Inventor： Joseph R. Mallon ,  Anthony D. Kurtz

IPC: G01L9/00 ,  G01L9/06

CPC classification number: G01L9/0054 ,  G01L9/0042 ,  Y10S73/04

Abstract: A pressure transducer employing a semiconductor diaphragm having a convoluted central section surrounded by a rigid peripheral section. The convolutions are a series of concentric grooves formed as squares producing a square nonplanar diaphragm in the preferred embodiment. The convolutions are formed on the semiconductor wafer by an anisotropic etch. Piezoresistive devices are diffused into the diaphragm in the peripheral region to form a bridge array. The transducer structure thus formed is capable of producing a linear and large magnitude voltage signal in response to a relatively small applied pressure or force.

Abstract translation: 一种采用半导体膜片的压力传感器，其具有由刚性周边部分包围的卷积中心部分。 旋转是在优选实施例中形成为产生正方形非平面隔膜的正方形的一系列同心凹槽。 通过各向异性蚀刻在半导体晶片上形成卷积。 压阻器件扩散到外围区域中的隔膜中以形成桥接阵列。 如此形成的传感器结构能够响应于相对小的施加的压力或力而产生线性和大幅度的电压信号。

公开(公告)号：US4456901A

公开(公告)日：1984-06-26

申请号：US298275

申请日：1981-08-31

Applicant: Anthony D. Kurtz ,  Timothy A. Nunn ,  Joseph R. Mallon

Inventor： Anthony D. Kurtz ,  Timothy A. Nunn ,  Joseph R. Mallon

IPC: G01L1/22 ,  G01L9/00 ,  H01L21/265 ,  H01L21/762 ,  H01L29/84

CPC classification number: G01L1/2293 ,  G01L9/0055 ,  H01L21/26506 ,  H01L21/76243 ,  H01L29/84

Abstract: A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top of the wafer to enable the etching or formation of a desired gage pattern.

Abstract translation: 公开了一种换能器结构，其包括通过单晶计配置的二氧化硅层介电隔离的单晶半导体隔膜。 所描述的方法使用高剂量氧，其被离子注入到单晶晶片中以形成二氧化硅的掩埋层，其中晶片的顶表面是单晶硅。 在晶片的顶部外延生长附加的硅层，以便蚀刻或形成期望的量具图案。

公开(公告)号：US4445108A

公开(公告)日：1984-04-24

申请号：US425244

申请日：1982-09-28

Applicant: Joseph R. Mallon ,  Anthony D. Kurtz ,  Timothy A. Nunn

Inventor： Joseph R. Mallon ,  Anthony D. Kurtz ,  Timothy A. Nunn

IPC: G01L9/00 ,  G01L1/22

CPC classification number: G01L9/0055

Abstract: There is disclosed a spreading resistance piezoresistive transducer which employs a planar diaphragm member fabricated from a semiconductor material and having deposited on a surface thereof at least three contact areas. A first contact area is located central to the diaphragm with a second area near the periphery of the diaphragm. A third contact is of a larger area and is positioned between the first and second contacts. A source of biasing potential is applied between the first and second contacts to cause current flow indicative of the spreading resistance between the contacts. The value of the spreading resistance varies in accordance with a force applied to the diaphragm.

Abstract translation: 公开了一种扩展电阻压阻式换能器，其使用由半导体材料制造并且在其表面上沉积至少三个接触区域的平面隔膜构件。 第一接触区域位于隔膜的中心，具有靠近隔膜周边的第二区域。 第三触点具有较大的面积并位于第一和第二触点之间。 偏置电位源施加在第一和第二触点之间以引起指示触点之间的扩展电阻的电流。 扩展电阻的值根据施加到隔膜的力而变化。

公开(公告)号：US4406993A

公开(公告)日：1983-09-27

申请号：US297093

申请日：1981-08-28

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L9/00

CPC classification number: G01L19/0084 ,  G01L19/0645 ,  G01L19/143

Abstract: An oil filled pressure transducer has a housing which has a top peripheral flange defining a recess. The housing has a plurality of tapered apertures directed from the top surface within the recess to a bottom surface with the diameter of each aperture being larger at the top surface than at the bottom surface. A separate terminal pin is located in each aperture and is bonded to the header by means of a glass bond which insulates the pin from the header. A metal diaphragm is coupled to the peripheral flange and a pressure sensor is located within the recess. The pressure sensor has terminals connected to the pins located in the tapered aperture. The recess is filled with oil for coupling pressures or forces imparted to the metal diaphragm to the sensor. The tapered apertures allow the unit to withstand high pressures which normally would cause the pins to rupture or dislodge from the housing.

Abstract translation: 装有油的压力传感器具有壳体，该壳体具有限定凹部的顶部周边凸缘。 壳体具有从凹部内的顶表面引导到底表面的多个锥形孔，每个孔的直径在顶表面处比在底表面处更大。 单独的端子销位于每个孔中，并且通过使引脚与插头绝缘的玻璃接合而接合到插头。 金属隔膜联接到周边凸缘，压力传感器位于凹槽内。 压力传感器具有连接到位于锥形孔中的销的端子。 凹槽中填充有油，用于将压力或赋予金属隔膜的力耦合到传感器。 锥形孔允许单元经受高压，这通常会导致销破裂或脱离壳体。