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1.发明授权
公开(公告)号：US4814856A
公开(公告)日：1989-03-21
申请号：US860523
申请日：1986-05-07
CPC分类号： G01L9/0055 , G01L9/0042 , H01L27/20
摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
摘要翻译： 通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。 载体晶片在顶表面上具有包括玻璃层的电介质层。 在人造晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。 这些区域表现出基本的换能器结构。 通过利用选择性蚀刻，因此可以在牺牲晶片上形成通过静电键结合到载体晶片上的换能器结构。 所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。
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2.发明授权Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus 失效介质隔离的细线半导体传感器和设备的制造
公开(公告)号：US4672354A
公开(公告)日：1987-06-09
申请号：US804761
申请日：1985-12-05
CPC分类号： G01L1/2293 , G01L9/0042 , Y10S73/04 , Y10T29/42 , Y10T29/49103
摘要： There is disclosed apparatus and methods of fabricating a piezoresistive semiconductor structure for use in a transducer. According to one method, a layer of silicon dioxide is grown over the surface of a first semiconductor wafer which is designated as a carrier wafer. A layer of glas is then formed on the top surface of the carrier wafer over said layer of silicon dioxide. A second wafer has diffused therein a high conductivity semiconductor layer which is diffused on a top surface of a sacrificial semiconductor wafer. The first and second wafers are then bonded together by means of an electrostatic bond with the high conductivity layer of the sacrificial wafer facing the glass layer of the first wafer. After securing the wafers together, one may etch away the remaining portion of the sacrificial wafer to provide a high conductivity resistive layer which is secured to the glass layer of the first wafer and is patterned to form a resistive network using standard photolithographic making. In another embodiment, the sacrificial wafer is processed by means of a high conductivity diffusion procedure whereby a resistive line pattern is formed in the second wafer. After diffusion, the second wafer is etched so that the high conductivity pattern projects from the top surface. This top surface consisting of the projected high conductivity resistive pattern is then bonded to the glass layer of the second wafer. After bonding the two wafers together, the unwanted N-type regions of the sacrificial wafer are etched away using a conductivity selective etch to form the resistive pattern.
摘要翻译： 公开了制造用于换能器的压阻半导体结构的装置和方法。 根据一种方法，在指定为载体晶片的第一半导体晶片的表面上生长二氧化硅层。 然后在载体晶片的顶表面上形成一层玻璃，该层在二氧化硅层上。 第二晶片在其中扩散了在牺牲半导体晶片的顶表面上扩散的高导电性半导体层。 第一和第二晶片然后通过与第一晶片的玻璃层的牺牲晶片的高电导率层的静电键结合在一起。 在将晶片固定在一起之后，可以蚀刻掉牺牲晶片的剩余部分，以提供固定到第一晶片的玻璃层的高导电性电阻层，并使用标准光刻制作来形成电阻网络。 在另一个实施例中，牺牲晶片通过高电导率扩散程序进行处理，由此在第二晶片中形成电阻线图案。 在扩散之后，蚀刻第二晶片，使得高导电性图案从顶表面突出。 然后将由投影的高导电性电阻图形组成的顶表面结合到第二晶片的玻璃层。 在将两个晶片结合在一起之后，使用电导率选择性蚀刻将牺牲晶片的不想要的N型区域蚀刻掉以形成电阻图案。
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3.发明授权Method of making integral transducer structures employing high conductivity surface features 失效使用高电导率表面特征制作积分传感器结构的方法
公开(公告)号：US5002901A
公开(公告)日：1991-03-26
申请号：US251816
申请日：1988-10-03
CPC分类号： G01L9/0055 , G01L9/0042 , H01L27/20 , Y10S148/012 , Y10T29/42
摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacrificial wafer, after being subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by mean of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
摘要翻译： 通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。 载体晶片在顶表面上具有包括玻璃层的电介质层。 牺牲晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。 这些区域表现出基本的换能器结构。 通过利用选择性蚀刻，因此可以在牺牲晶片上形成换能器结构，其通过静电键结合到载体晶片。 所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。
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公开(公告)号：US4739298A
公开(公告)日：1988-04-19
申请号：US706889
申请日：1985-02-28
CPC分类号： G01L9/0055 , Y10T29/49103
摘要： A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.
摘要翻译： 高温换能器由具有单层硅基底层的第一部分组成，该层被氧化物涂覆。 将高温玻璃的薄层溅射在基底层的氧化物层上。 通过扩散N型硅晶片形成p +层来形成第二部分。 第一和第二部分通过阳极结合在一起，其中p +层被固定到玻璃层以形成复合结构。 然后去除N型材料并在p +层中形成压阻电流。 该结构提供了一个在宽工作范围内表现出稳定运行参数的高温换能器。
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公开(公告)号：US4483196A
公开(公告)日：1984-11-20
申请号：US472851
申请日：1983-03-07
CPC分类号： G01L9/0052 , G01L9/0002
摘要： A pressure transducer employs a tubular glass structure of a "D" shaped cross section, with the arcuate section of the "D" shaped configuration being substantially thicker than the base section. A sensor array is positioned on the underside of the base section while a pressure conducting fluid is directed through the tubular member to provide deflection of the base to cause the sensor array to provide an output indicative of pressure variations in the fluid medium. The sensor array as positioned on the underside of the base is both electrically and mechanically isolated from the pressure conducting medium.
摘要翻译： 压力传感器采用“D”形横截面的管状玻璃结构，“D”形构造的弓形部分基本上比基部部分厚。 传感器阵列定位在基部的下侧，同时压力传导流体被引导通过管状构件以提供基部的偏转，以使传感器阵列提供指示流体介质中的压力变化的输出。 位于基座下侧的传感器阵列与导电介质电气和机械隔离。
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公开(公告)号：US4236137A
公开(公告)日：1980-11-25
申请号：US21960
申请日：1979-03-19
CPC分类号： G01L9/0054 , G01L9/0042
摘要： A pressure transducer employs a semiconductor diaphragm with a top surface having located thereon a central boss area of a trapezoidal cross section surrounded or "framed" by a continuous groove of a predetermined width. Piezoresistive sensors are formed on the bottom surface of said diaphragm with a first sensor adjacent the outer edge of said groove and another sensor parallel to said first sensor and adjacent the inner edge of said groove, said groove operative as a stress concentrating area to enable said sensors to provide a relatively large linear output upon application of a force to said diaphragm.
摘要翻译： 压力传感器采用半导体膜片，其上表面具有由预定宽度的连续凹槽包围或“框起”的梯形横截面的中心凸台区域。 压电传感器形成在所述隔膜的底表面上，第一传感器邻近所述槽的外边缘，另一个传感器平行于所述第一传感器并与所述槽的内边缘相邻，所述凹槽用作应力集中区域，以使所述 传感器，以在向所述隔膜施加力时提供相对较大的线性输出。
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公开(公告)号：US4516430A
公开(公告)日：1985-05-14
申请号：US558033
申请日：1983-12-05
IPC分类号： A61B5/0215 , A61B5/0428 , G01L9/00 , G01L1/22
CPC分类号： A61B5/04282 , A61B5/0215 , G01L9/0055
摘要： There is disclosed a medical transducer apparatus which employs composite planar members each of which is fabricated from a highly insulative material. The members are positioned in congruency and a first member which may be a composite member has a diaphragm area located on the surface thereof to which a piezoresistive gage is bonded. The gage is surrounded by an aperture in another member to enable leads from the gage to be directed to an interconnection and circuit board also fabricated from an insulator material. The structure provides isolation to the patient in regard to the biasing source used for the gage array and also provides isolation based on external voltage which serves to protect the transducer during operation.
摘要翻译： 公开了一种医疗用换能器装置，其采用由高绝缘材料制成的复合平面构件。 构件一致地定位，并且可以是复合构件的第一构件具有位于其压电压力表所粘合的表面上的隔膜区域。 量具被另一个构件中的孔包围，以使得量具的引线被引导到也由绝缘体材料制成的互连和电路板。 该结构提供了与用于量具阵列的偏置源相对于患者的隔离，并且还提供了基于外部电压的隔离，其用于在操作期间保护换能器。
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公开(公告)号：US4510671A
公开(公告)日：1985-04-16
申请号：US537100
申请日：1983-11-21
IPC分类号： G01L1/22 , G01L9/00 , H01L21/265 , H01L21/762 , H01L29/84
CPC分类号： H01L21/76243 , G01L1/2293 , G01L9/0055 , H01L21/26506 , H01L29/84 , Y10S148/159 , Y10S438/97 , Y10S438/977 , Y10T29/49103
摘要： A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top surface of the wafer to enable the etching or formation of a desired gage pattern.
摘要翻译： 公开了一种换能器结构，其包括通过单晶计配置的二氧化硅层介电隔离的单晶半导体隔膜。 所描述的方法使用高剂量氧，其被离子注入到单晶晶片中以形成二氧化硅的掩埋层，其中晶片的顶表面是单晶硅。 在晶片的顶表面上外延生长另外的硅层，以便蚀刻或形成期望的量具图案。
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公开(公告)号：US5702619A
公开(公告)日：1997-12-30
申请号：US723519
申请日：1996-09-30
CPC分类号： G01L9/0055
摘要： A method of fabricating a high pressure piezoresistive pressure transducer having a substantially linear pressure versus stress output over its full range of operation. The method involves bonding a carrier wafer having a dielectric isolating layer on one surface and a supporting member on the opposite surface, to a pattern wafer containing at least two single crystalline longitudinal piezoresistive sensing elements of a second conductivity. Both the pattern wafer and sections of the carrier wafer are etched leaving the piezoresistive sensing elements bonded directly to the dielectric isolating layer, and a diaphragm member having a deflecting portion and a non-deflecting portion. The diaphragm member is constructed to have an aspect ratio which is of the order of magnitude of one. The piezoresistive sensing elements have a large transverse piezoresistive coefficient normal to the plane of the diaphragm and both a large longitudinal piezoresistive coefficient and a small transverse piezoresistive coefficient in the plane of the diaphragm. One of the at least two piezoresistive sensing elements is positioned above the non-deflection portion of the diaphragm in an area of minimal longitudinal stress and the other is positioned above the deflecting portion of the diaphragm in an area of high compressive stress. The positioning of the second sensor over the deflecting portion of the diaphragm is selected so that there will be equal and opposite resistance changes registered from the sensors. The method results in an improved transducer design when compared to prior art devices.
摘要翻译： 一种制造高压压阻式压力传感器的方法，该压力传感器在其全部操作范围内具有基本线性的压力与应力输出。 该方法包括将具有介电隔离层的载体晶片和相对表面上的支撑构件结合到包含至少两个具有第二导电性的单晶纵向压阻式感测元件的图案晶片。 蚀刻晶片和载体晶片的两个部分，留下直接结合到绝缘隔离层的压阻感测元件，以及具有偏转部分和非偏转部分的隔膜部件。 隔膜构件被构造成具有一个数量级的纵横比。 压阻感测元件具有垂直于隔膜平面的大的横向压阻系数，并且在隔膜平面中具有大的纵向压阻系数和小的横向压阻系数。 至少两个压阻感测元件中的一个在最小纵向应力的区域中位于隔膜的非偏转部分上方，另一个位于隔膜的偏转部分的高压缩应力区域的上方。 选择第二传感器在隔膜的偏转部分上的定位，使得从传感器注册相同和相反的阻力变化。 与现有技术的装置相比，该方法导致改进的换能器设计。
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公开(公告)号：US4764747A
公开(公告)日：1988-08-16
申请号：US124089
申请日：1987-11-23
CPC分类号： G01L19/0645 , G01L19/147
摘要： A glass header structure for a pressure transducer employs a cylindrical member fabricated from a borosilicate glass having a thermal expansion coefficient which matches silicon. The glass header has a central aperture which extends from the top to the bottom surface. Positioned about the central aperture are four smaller apertures located at 90 degree intervals and each containing an elongated terminal pin. The pins are of a nail head configuration with a flat top head of a larger diameter than the diameter of the apertures and of the main pin body. Affixed to the flat top surfaces of the terminal pins by means of ball bonding are wires which connect to the terminal areas of a semiconductor pressure transducer which is mounted over the central aperture of the header. In this manner, the glass header serves to electrically and mechanically isolate the semiconductor transducer from the external environment and to further provide isolation of the transducer from voltage and heating effects which are produced during the assembly process necessary to fabricate a complete transducer unit.
摘要翻译： 用于压力传感器的玻璃头部结构采用由具有与硅相匹配的热膨胀系数的硼硅酸盐玻璃制成的圆柱形构件。 玻璃头部具有从顶部延伸到底部表面的中心孔。 围绕中心孔定位的是四个较小的孔，位于90度的间隔处，每个孔包含细长的端子销。 销具有指甲头构型，其具有直径大于孔和主销体直径的平顶头。 通过滚珠接合固定在端子销的平坦顶面上的是连接到安装在集管的中心孔上的半导体压力传感器的端子区域的导线。 以这种方式，玻璃接头用于将半导体换能器与外部环境电气和机械隔离，并进一步提供换能器与制造完整换能器单元所需组装过程中产生的电压和加热效应的隔离。
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