摘要:
A latch output driver including an output driver circuit having a pull-up transistor and a pull-down transistor connected in series, wherein the pull-up transistor has a drain connected to an upper power supply voltage and a source connected to a drain of the pull-down transistor and the pull-down transistor has a source connected to a lower power supply voltage. The latch controlled output driver also includes a first latch circuit having an output connected to the gate of the pull-up transistor and a second latch circuit having an output connected to the gate of the pull-down transistor. A control circuit is connected to the first and second latches, wherein the control circuit may selectively disable and enable the latch controlled output driver in response to a control signal. A driver output is connected between the pull-up and pull-down transistors, wherein the output driver is in an open state when the latch controlled output driver is disabled by the control circuit. A data circuit is connected to the first and second latch circuits, wherein the data circuit stores the state of the first and second latches present when the latch controlled output driver is enabled and restores the state of the first and second latches when the latch controlled output driver is enabled after being disabled.
摘要:
Therefore, according to the present invention, borrow look ahead circuitry suitable for use in a FIFO memory allows the difference between two values to be quickly generated and this difference compared to a third value. A borrow look ahead element generates a plurality of borrow signals which are supplied to CORRESPONDING full subtractors of a subtractor section in a parallel fashion. This parallel propagation reduces gates delays between the subtractors, resulting in faster operation. Thus, the time required to supply the difference to a comparator is minimized. Adding additional levels to the borrow look ahead element further increases the speed of the borrow look ahead circuitry.
摘要:
Difference flag logic suitable for use in a FIFO memory is modified to quickly generate FIFO flag status through the use of programmable, resettable counters which eliminate the need for subtractor circuitry. A comparator is used to compare a value from a read counter with a value from a write counter. The subtractor function is replaced by offsetting the read count from the write count by a value equal to the desired FIFO flag value. Offset of the read count from the write count is accomplished by utilizing counters which provide programmable resettability. Use of programmable, resettable counters allows FIFO flag values to be chosen and implemented very easily. For instance, it is possible for a user to change from an almost full FIFO flag to a half full FIFO flag without changing any hardware at all. The counters are simply programmed and reset accordingly.
摘要:
A memory system that includes a memory array having at least two pairs of data lines, first and second data lines that correspond to columns in the memory array. The memory array also includes two disabling sense amplifier circuits, a first disabling sense amplifier circuit connected to the first data lines and a disabling sense amplifier circuit connected to the second data lines, wherein the disabling sense amplifier circuits produce output signals and may be enabled and disabled. A selection signal is provided for selectively enabling and disabling the disabling sense amplifier circuits, wherein one pair of data lines may be selected. An amplification circuit connected to the disabling sense amplifier circuits provides for amplifying the output signals from the disabling sense amplifier circuits.
摘要:
Difference flag logic suitable for use in a FIFO memory is modified to quickly generate FIFO flag status without the use of subtractor circuitry. Bit comparators, which determine if a first bit is less than, equal to, or greater than a second bit, of a magnitude comparator are divided into groups which generate compare output signals in parallel to one another, thereby reducing total magnitude comparator delay and resulting in faster operation. These compare output signals are the inputs of a control element which determines which compare output signal is allowed to pass through as the final compare output signal. The subtractor function is replaced by offsetting the read count from the write count by a value equal to the desired FIFO flag value. In addition, control of selected bits, such as the most significant bits (MSBs), of the numbers is included and may be used as necessary to avoid a wrap-around condition.
摘要:
An output driver includes a pull-up and a pull-down transistor in series between an upper and a lower power supply voltage. Each transistor is controlled by a latch connected to its gate. Control transistors are cross-coupled between inputs to the latches and a power supply voltage to force at least one of the latches to be in a known state. This prevents both of the transistors from turning on simultaneously.
摘要:
A method for stress testing decoders and other periphery circuits used with a memory array. An address buffer simultaneously sets the inputs of a plurality of decoders to a first common voltage level, so that a plurality of rows and/or columns within the memory array are selected for a predetermined period of time. A stress voltage is then applied to the integrated circuit to stress test the gate oxides within the decoders and other periphery circuits. The inputs of the plurality of decoders are then simultaneously set to a second common voltage level, so that the plurality of rows and/or columns within the memory array are deselected. Finally, a stress voltage is applied to the integrated circuit to stress test the gate oxides within the decoders and other periphery circuits.
摘要:
An address buffer which allows for the simultaneous selection and/or deselection of a plurality of rows and/or columns within a memory array. A first and a second circuit generate a true and a complementary signal, respectively, during normal operations of the integrated circuit. When desired, the first and second circuits may be used to generate two signals of the same voltage level. The two signals of the same voltage level may then be used by an address decoder to simultaneously select and/or deselect a plurality of rows and/or columns within a memory array.
摘要:
A read/write memory having timed-out control of certain of its peripheral circuitry is disclosed. The control circuit for controlling the time at which time-out is to occur includes two delay stages of different lengths. The shorter delay stage is used to define the time-out in a read operation, and the longer delay stage is used to define the time-out in a write operation, since a read operation can generally be accomplished sooner than a write operation. Enabling of the periphery is controlled by an address transition detection circuit, and by a data transition detection circuit. The circuit includes a short path by which enabling of the periphery is performed responsive to a data transition in the absence of an address transition, in order to perform a late write operation.
摘要:
An integrated circuit memory is disclosed which has its primary memory array arranged into blocks and which has redundant columns, each of which can replace a column in any one of the blocks. The redundant columns are selected by way of a redundant column decoder, associated with each column. A plurality of redundant sense amplifiers are each associated with selected redundant columns. Each of the redundant column decoders includes a set of fuses for storing the column address responsive to which its associated redundant column is to be selected. The coupling of each redundant sense amplifier is controlled by a redundant multiplexer associated with each of the input/output terminals. Each redundant multiplexer receives the redundant column select signals from each redundant column decoder corresponding thereto, and includes fuses which indicate if its input/output terminal is to be placed in communication with its associated sense amplifier upon selection of a redundant column.