Ultrahigh vacuum process for the deposition of nanotubes and nanowires
    12.
    发明授权
    Ultrahigh vacuum process for the deposition of nanotubes and nanowires 有权
    用于沉积纳米管和纳米线的超高真空工艺

    公开(公告)号:US08945304B2

    公开(公告)日:2015-02-03

    申请号:US12228529

    申请日:2008-08-13

    Abstract: A system and method A method of growing an elongate nanoelement from a growth surface includes: a) cleaning a growth surface on a base element; b) providing an ultrahigh vacuum reaction environment over the cleaned growth surface; c) generating a reactive gas of an atomic material to be used in forming the nanoelement; d) projecting a stream of the reactive gas at the growth surface within the reactive environment while maintaining a vacuum of at most 1×10−4 Pascal; e) growing the elongate nanoelement from the growth surface within the environment while maintaining the pressure of step c); f) after a desired length of nanoelement is attained within the environment, stopping direction of reactive gas into the environment; and g) returning the environment to an ultrahigh vacuum condition.

    Abstract translation: 一种系统和方法从生长表面生长细长纳米元素的方法包括:a)清洁基底元件上的生长表面; b)在清洁的生长表面上提供超高真空反应环境; c)产生用于形成纳米元素的原子材料的反应气体; d)在反应性环境中的生长表面处投射反应气体流,同时保持至多1×10 -4帕斯卡的真空度; e)在保持步骤c)的压力的同时从环境中的生长表面生长细长纳米元素; f)在环境中达到所需长度的纳米元素后,将反应气体停止进入环境的方向; 和g)使环境恢复到超高真空状态。

    Growth of nanotubes from patterned and ordered nanoparticles
    13.
    发明申请
    Growth of nanotubes from patterned and ordered nanoparticles 审中-公开
    来自图案和有序纳米颗粒的纳米管生长

    公开(公告)号:US20120132534A1

    公开(公告)日:2012-05-31

    申请号:US11983324

    申请日:2007-11-08

    Applicant: Biswajit Das

    Inventor: Biswajit Das

    CPC classification number: H01L31/18 B01J27/22 G01Q80/00 H01L31/0352

    Abstract: Methods, apparatus and systems form structures from nanoparticles by providing a source of nanoparticles, the particles being capable of being moved by application of a field, such as an electrical field, magnetic field and even electromagnetic radiation or fields such as light, UV, IR, radiowaves, radiation and the like; depositing the nanoparticles to a surface in a first distribution of the nanoparticles; applying a field to the nanoparticles on the surface that applies a force to the particles; and rearranging the nanoparticles on the surface by the force from the field to form a second distribution of nanoparticles on the surface. Nanoparticle catalysts can be deposited on the surfaces. The second distribution of nanoparticles is more ordered or more patterned than the first distribution of nanoparticles as a result of the rearranging. Nanotubes can then be grown on the ordered nanoparticle deposited catalysts.

    Abstract translation: 方法,装置和系统通过提供纳米颗粒来形成纳米颗粒的结构,颗粒能够通过施加场,例如电场,磁场,甚至电磁辐射或诸如光,UV,IR的场来移动 无线电波,辐射等; 将纳米颗粒沉积在纳米颗粒的第一分布中的表面上; 将场施加到对颗粒施加力的表面上的纳米颗粒; 并且通过来自场的力将表面上的纳米颗粒重新排列以在表面上形成纳米颗粒的第二分布。 纳米颗粒催化剂可以沉积在表面上。 由于重新排列,纳米颗粒的第二分布比纳米颗粒的第一分布更有序或更加图案化。 然后可以在有序纳米颗粒沉积的催化剂上生长纳米管。

    Construction of flash memory chips and circuits from ordered nanoparticles
    14.
    发明授权
    Construction of flash memory chips and circuits from ordered nanoparticles 有权
    从有序纳米颗粒构建闪存芯片和电路

    公开(公告)号:US07790560B2

    公开(公告)日:2010-09-07

    申请号:US12075523

    申请日:2008-03-12

    Applicant: Biswajit Das

    Inventor: Biswajit Das

    Abstract: Methods, apparatus and systems form memory structures, such as flash memory structures from nanoparticles by providing a source of nanoparticles as a conductive layer. The particles are moved by application of a field, such as an electrical field, magnetic field and even electromagnetic radiation. The nanoparticles are deposited onto an insulating surface over a transistor in a first distribution of the nanoparticles. A field is applied to the nanoparticles on the surface that applies a force to the particles, rearranging the nanoparticles on the surface by the force from the field to form a second distribution of nanoparticles on the surface. A protective and enclosing insulating layer is deposited on the nanoparticle second distribution. The addition of a top conductive layer completes a basic flash memory structure.

    Abstract translation: 方法,装置和系统通过提供纳米颗粒源作为导电层形成记忆结构,例如来自纳米颗粒的闪存结构。 颗粒通过施加诸如电场,磁场,甚至电磁辐射的场来移动。 在纳米颗粒的第一分布中,纳米颗粒沉积在晶体管上的绝缘表面上。 将场施加到对颗粒施加力的表面上的纳米颗粒,通过来自场的力将表面上的纳米颗粒重排,以在表面上形成纳米颗粒的第二分布。 保护性和封闭的绝缘层沉积在纳米颗粒第二分布上。 顶部导电层的添加完成了基本的闪存结构。

    MACROLIDES DERIVATIVES AS ANTIBACTERIAL AGENTS
    15.
    发明申请
    MACROLIDES DERIVATIVES AS ANTIBACTERIAL AGENTS 审中-公开
    抗坏血酸衍生物作为抗菌剂

    公开(公告)号:US20090130225A1

    公开(公告)日:2009-05-21

    申请号:US12094800

    申请日:2006-11-21

    CPC classification number: C07H17/08

    Abstract: The present invention provides macrolide derivatives, which can be used as antibacterial agents. Compounds described herein can be used for treating or preventing conditions caused by or contributed to by gram-positive, gram-negative or anaerobic bacteria, more particularly against, for example, Staphylococci, Streptococci, Enterococci, Haemophilus, Moraxalla spp., Chlamydia spp., Mycoplasm, Legionella spp., Mycobacterium, Helicobacter, Clostridium, Bacteroides, Corynebacterium, Propionibeacterium, Bacillus, Enterobactericeae or any combination thereof. Also provided are processes for preparing compounds described herein, pharmaceutical compositions thereof, and methods of treating bacterial infections.

    Abstract translation: 本发明提供可用作抗菌剂的大环内酯衍生物。 本文所述的化合物可用于治疗或预防由革兰氏阳性,革兰氏阴性或厌氧细菌引起或促成的病症,特别是针对例如葡萄球菌,链球菌,肠球菌,嗜血杆菌,马克拉斯氏菌属,衣原体属。 ,支原体属,军团菌属,分枝杆菌属,幽门螺杆菌属,梭菌属,拟杆菌属,棒状杆菌属,丙酸杆菌属,芽孢杆菌属,肠杆菌属或其任何组合。 还提供了制备本文所述化合物的方法,其药物组合物和治疗细菌感染的方法。

    Fabrication of patterned and ordered nanoparticles
    16.
    发明申请
    Fabrication of patterned and ordered nanoparticles 有权
    图案和有序纳米粒子的制备

    公开(公告)号:US20080292870A1

    公开(公告)日:2008-11-27

    申请号:US11888476

    申请日:2007-08-01

    Applicant: Biswajit Das

    Inventor: Biswajit Das

    CPC classification number: B82B3/00 B82Y30/00 B82Y40/00 Y10T428/25

    Abstract: Methods, apparatus and systems form structures from nanoparticles by: providing a source of nanoparticles, the particles being capable of being moved by application of a field, such as an electrical field, magnetic field and even electromagnetic radiation or fields such as light, UV IR, radiowaves, radiation and the like; depositing the nanoparticles to a surface in a first distribution of the nanoparticles; applying a field to the nanoparticles on the surface that applies a force to the particles; and rearranging the nanoparticles on the surface by the force from the field to form a second distribution of nanoparticles on the surface. The second distribution of nanoparticles is more ordered or more patterned than the first distribution of nanoparticles as a result of the rearranging.

    Abstract translation: 方法,装置和系统通过以下方式形成来自纳米颗粒的结构:提供纳米颗粒源,所述颗粒能够通过施加场,例如电场,磁场,甚至电磁辐射或诸如光,紫外线 无线电波,辐射等; 将纳米颗粒沉积在纳米颗粒的第一分布中的表面上; 将场施加到对颗粒施加力的表面上的纳米颗粒; 并且通过来自场的力将表面上的纳米颗粒重新排列以在表面上形成纳米颗粒的第二分布。 由于重新排列,纳米颗粒的第二分布比纳米颗粒的第一分布更有序或更加图案化。

    Construction of flash memory chips and circuits from ordered nanoparticles
    17.
    发明申请
    Construction of flash memory chips and circuits from ordered nanoparticles 有权
    从有序纳米颗粒构建闪存芯片和电路

    公开(公告)号:US20080230826A1

    公开(公告)日:2008-09-25

    申请号:US12075523

    申请日:2008-03-12

    Applicant: Biswajit Das

    Inventor: Biswajit Das

    Abstract: Methods, apparatus and systems form memory structures, such as flash memory structures from nanoparticles by providing a source of nanoparticles as a conductive layer. The particles are moved by application of a field, such as an electrical field, magnetic field and even electromagnetic radiation. The nanoparticles are deposited onto an insulating surface over a transistor in a first distribution of the nanoparticles. A field is applied to the nanoparticles on the surface that applies a force to the particles, rearranging the nanoparticles on the surface by the force from the field to form a second distribution of nanoparticles on the surface. A protective and enclosing insulating layer is deposited on the nanoparticle second distribution. The addition of a top conductive layer completes a basic flash memory structure.

    Abstract translation: 方法,装置和系统通过提供纳米颗粒源作为导电层形成记忆结构,例如来自纳米颗粒的闪存结构。 颗粒通过施加诸如电场,磁场,甚至电磁辐射的场来移动。 在纳米颗粒的第一分布中,纳米颗粒沉积在晶体管上的绝缘表面上。 将场施加到对颗粒施加力的表面上的纳米颗粒,通过来自场的力将表面上的纳米颗粒重排,以在表面上形成纳米颗粒的第二分布。 保护性和封闭的绝缘层沉积在纳米颗粒第二分布上。 顶部导电层的添加完成了基本的闪存结构。

    Oxazolidinone Derivatives as Antimicrobials
    19.
    发明申请
    Oxazolidinone Derivatives as Antimicrobials 失效
    恶唑烷酮衍生物作为抗菌剂

    公开(公告)号:US20080188470A1

    公开(公告)日:2008-08-07

    申请号:US11911576

    申请日:2006-04-12

    CPC classification number: Y02A50/478 Y02P20/55

    Abstract: Provided herein are novel substituted phenyl oxazolidinones and to processes for the synthesis thereof. Also provided are pharmaceutical compositions comprising one or more compounds described herein The compounds described can be useful antimicrobial agents, which can be effective against a number of human and veterinary pathogens, including gram-positive aerobic bacteria such as multiple-resistant staphylococci, streptococci and enterococci, as well as, anaerobic organisms, such as Bacterioides spp. and Clostridia spp. species, and acid fast organisms, such as Mycobacterium tuberculosis, Mycobacterium avium and Mycobacterium spp.

    Abstract translation: 本文提供了新的取代的苯基恶唑烷酮,以及其合成方法。 还提供了包含本文所述的一种或多种化合物的药物组合物。所述化合物可以是有用的抗微生物剂,其可以对许多人和兽医病原体有效,包括革兰氏阳性好氧细菌如多重耐药性葡萄球菌,链球菌和肠球菌 ,以及厌氧生物,如细菌属。 和梭菌属(Clostridia spp。) 物种和酸性快速生物,如结核分枝杆菌,鸟分枝杆菌和分枝杆菌。

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