公开(公告)号：US20080135893A1

公开(公告)日：2008-06-12

申请号：US11987951

申请日：2007-12-06

Applicant: Hye-Hyang Park ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

Inventor： Hye-Hyang Park ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

IPC: H01L29/78 ,  H01L21/84

CPC classification number: H01L29/4908 ,  H01L27/1214 ,  H01L29/66757

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.

Abstract translation: 薄膜晶体管包括衬底，衬底上的半导体层，半导体层上的热氧化物层，热氧化层上的栅电极，位于半导体层的沟道区上的栅电极，中间层 绝缘层，以及与半导体层电连接的源极和漏极。

公开(公告)号：US20080121887A1

公开(公告)日：2008-05-29

申请号：US11777637

申请日：2007-07-13

Applicant: Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

Inventor： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC: H01L29/06 ,  H01L21/3205

CPC classification number: H01L29/7881 ,  B82Y10/00 ,  H01L21/28273 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513

Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Abstract translation: 非易失性存储器件能够减少由多晶硅的粗糙表面引起的过大的漏电流，并且通过形成包括氮氧化硅（SiO 2）的第一氧化物膜，实现改进的阻挡功能， 使用一氧化二氮（N 2 O 3）等离子体，并且通过形成富硅的氮化硅膜，以及其制造方法和包括非氧化氮（N 2 O 3） 易失存储器件。 此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

公开(公告)号：US20070231977A1

公开(公告)日：2007-10-04

申请号：US11760869

申请日：2007-06-11

Applicant: Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

Inventor： Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

IPC: H01L21/84

CPC classification number: H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

Abstract: A method of fabricating a thin film transistor includes forming an active layer on an insulating substrate; forming a gate insulation film on the insulating substrate; forming source, drain, and body contact regions which are separated by a channel region in the active layer; forming a gate on the gate insulation film; forming an interlayer insulation film on the insulating substrate; and forming source and drain electrodes electrically connected with the source and drain regions, respectively, wherein a voltage is applied to the channel region of the active layer through the body contact region, and the body contact region is connected to the source or drain electrode.

Abstract translation: 制造薄膜晶体管的方法包括在绝缘基板上形成有源层; 在绝缘基板上形成栅极绝缘膜; 形成由有源层中的沟道区分隔的源极，漏极和体接触区域; 在栅极绝缘膜上形成栅极; 在绝缘基板上形成层间绝缘膜; 以及分别形成与源极和漏极区域电连接的源极和漏极，其中电压通过本体接触区域施加到有源层的沟道区域，并且主体接触区域连接到源极或漏极电极。

公开(公告)号：US07274036B2

公开(公告)日：2007-09-25

申请号：US10910350

申请日：2004-08-04

Applicant: Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

Inventor： Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L29/12 ,  H01L29/786 ,  H01L27/01 ,  H01L27/12

CPC classification number: H01L29/78666 ,  H01L27/12 ,  H01L29/783 ,  H01L29/7841 ,  H01L29/78609 ,  H01L29/78675

Abstract: A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.

Abstract translation: 一种TFT，包括栅极金属层，掺杂有第一极性的掺杂剂的体层，掺杂有第二极性的掺杂剂的源极层和漏极层，形成在源极层和漏极层之间的半导体层，以及 耦合栅极金属层和主体层的接触。

公开(公告)号：US20050082530A1

公开(公告)日：2005-04-21

申请号：US10959976

申请日：2004-10-08

Applicant: Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

Inventor： Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

IPC: H01L29/786 ,  H01L29/10

CPC classification number: H01L29/78615

Abstract: A thin film transistor of the present invention comprises, an active layer formed on an insulating substrate and having a channel region and source/drain regions; a gate electrode formed corresponding to the channel region of the active region; a body contact region separately formed with the source/drain regions in the active layer; source/drain electrodes each connected to the source/drain regions; and a conductive wiring for connecting the body contact region and the gate electrode.

Abstract translation: 本发明的薄膜晶体管包括：形成在绝缘基板上并具有沟道区域和源极/漏极区域的有源层; 形成对应于所述有源区的沟道区的栅电极; 与所述有源层中的源极/漏极区域分开形成的体接触区域; 源极/漏极，各自连接到源极/漏极区; 以及用于连接体接触区域和栅电极的导电布线。

公开(公告)号：US20050077844A1

公开(公告)日：2005-04-14

申请号：US10938000

申请日：2004-09-10

Applicant: Jae-Bon Koo ,  Byoung-Deog Choi

Inventor： Jae-Bon Koo ,  Byoung-Deog Choi

IPC: H01L51/50 ,  H01L27/12 ,  H01L27/32 ,  H01L29/78 ,  H01L29/786 ,  H05B33/00 ,  H01L29/792

CPC classification number: H01L29/78615 ,  H01L27/12 ,  H01L27/3262 ,  H01L29/783 ,  H01L29/78639

Abstract: A high-speed flat panel display having a long lifetime. Thin film transistors in a pixel portion having a plurality of pixels are contacted differently from thin film transistors in driving circuit portions for driving the pixels, thereby enhancing luminance uniformity and reducing power consumption. The thin film transistors each have a channel region and a body contact region for applying a predetermined voltage to the channel region. At least one thin film transistor in the pixel portion is a source-body contact thin film transistor having the body contact region connected to one of source and drain electrodes so that the predetermined voltage can be provided to the channel region. Each thin film transistor in the driving circuit portion is a gate-body contact thin film transistor having the body contact region connected to the gate electrode so that a predetermined voltage can be provided to the channel region.

Abstract translation: 一种寿命长的高速平板显示器。 具有多个像素的像素部分中的薄膜晶体管与用于驱动像素的驱动电路部分中的薄膜晶体管不同地接触，从而增强亮度均匀性并降低功耗。 薄膜晶体管各自具有用于向沟道区施加预定电压的沟道区和体接触区。 像素部分中的至少一个薄膜晶体管是源体接触薄膜晶体管，其具有连接到源极和漏极之一的主体接触区域，从而可以将预定电压提供给沟道区域。 驱动电路部分中的每个薄膜晶体管是具有连接到栅电极的体接触区域的门体接触薄膜晶体管，从而可以向沟道区域提供预定电压。

公开(公告)号：US06569782B2

公开(公告)日：2003-05-27

申请号：US09800892

申请日：2001-03-08

Applicant: Jin-Ho Jeon ,  Byoung-Deog Choi ,  Jong-Seung Yi ,  Tae-Wook Seo

Inventor： Jin-Ho Jeon ,  Byoung-Deog Choi ,  Jong-Seung Yi ,  Tae-Wook Seo

IPC: H01L2131

CPC classification number: H01L21/02129 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31625

Abstract: An insulating layer having a BPSG layer, a semiconductor device and methods for fabricating them. After preparing an oxidizing atmosphere using an oxygen gas, a first seed layer is formed with a tetraethylorthosilicate (TEOS) and the oxygen gas. Thereafter, a second seed layer, used to form an insulating layer capable of controlling an amount of a boron, is formed by means of using a triethylborate (TEB), the TEOS and the oxygen gas. Then, the insulating layer having a BPSG layer is formed using the TEB, a triethylphosphate, the TEOS and an ozone gas. About 5.25 to 5.75% by weight of the boron and about 2.75 to 4.25% by weight of the phosphorous are added to the insulating layer.

公开(公告)号：US08652885B2

公开(公告)日：2014-02-18

申请号：US11760869

申请日：2007-06-11

Applicant: Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

Inventor： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC: H01L21/00

CPC classification number: H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

Abstract: A method of fabricating a thin film transistor includes forming an active layer on an insulating substrate; forming a gate insulation film on the insulating substrate; forming source, drain, and body contact regions which are separated by a channel region in the active layer; forming a gate on the gate insulation film; forming an interlayer insulation film on the insulating substrate; and forming source and drain electrodes electrically connected with the source and drain regions, respectively, wherein a voltage is applied to the channel region of the active layer through the body contact region, and the body contact region is connected to the source or drain electrode.

Abstract translation: 制造薄膜晶体管的方法包括在绝缘基板上形成有源层; 在绝缘基板上形成栅极绝缘膜; 形成由有源层中的沟道区分隔的源极，漏极和体接触区域; 在栅极绝缘膜上形成栅极; 在绝缘基板上形成层间绝缘膜; 以及分别形成与源极和漏极区域电连接的源极和漏极，其中电压通过本体接触区域施加到有源层的沟道区域，并且主体接触区域连接到源极或漏极电极。

公开(公告)号：US07834397B2

公开(公告)日：2010-11-16

申请号：US11509853

申请日：2006-08-25

Applicant: Byoung-Keon Park ,  Byoung-Deog Choi ,  Myeong-Seob So

Inventor： Byoung-Keon Park ,  Byoung-Deog Choi ,  Myeong-Seob So

IPC: H01L27/12

CPC classification number: H01L29/42384 ,  H01L27/124 ,  H01L29/66757

Abstract: A thin film transistor (TFT), a method of fabricating the same, and a display device including the TFT, are provided. In the TFT, a channel region is connected to a gate electrode so that the influence of a substrate bias is reduced or eliminated. Thus, the threshold voltage of the TFT is reduced, a subthreshold slope can be improved, and a large drain current can be obtained at a low gate voltage.

Abstract translation: 提供薄膜晶体管（TFT），其制造方法以及包括TFT的显示装置。 在TFT中，沟道区域连接到栅电极，从而减小或消除衬底偏置的影响。 因此，TFT的阈值电压降低，可以提高亚阈值斜率，并且可以在低栅极电压下获得大的漏极电流。

公开(公告)号：US07501682B2

公开(公告)日：2009-03-10

申请号：US11790010

申请日：2007-04-23

Applicant: Dae-Chul Choi ,  Byoung-Deog Choi ,  Hye-Hyang Park ,  Ju-Yeun Jung ,  Hyun-Sun Park

Inventor： Dae-Chul Choi ,  Byoung-Deog Choi ,  Hye-Hyang Park ,  Ju-Yeun Jung ,  Hyun-Sun Park

IPC: H01L29/788

CPC classification number: H01L29/7881 ,  H01L21/28273 ,  H01L27/32 ,  H01L29/66825 ,  H01L51/50

Abstract: A nonvolatile memory device may include a substrate, a semiconductor layer on the substrate, and including a source region, a drain region having a relatively shallower impurity injection region than that of the source region and a channel region disposed between the source and drain regions, a first gate insulating layer on the semiconductor layer, and having regions corresponding to the source and drain regions thinner than a region corresponding to the channel region, and a first gate electrode, a second gate insulating layer, and a second gate electrode which are disposed on the first gate insulating layer. An organic light emitting display device (OLED) may include the nonvolatile memory device.

Abstract translation: 非易失性存储器件可以包括衬底，衬底上的半导体层，并且包括源极区，具有比源极区的杂质注入区相对较浅的漏极区和设置在源极和漏极区之间的沟道区， 半导体层上的第一栅极绝缘层，并且具有对应于比与沟道区对应的区域更薄的源极和漏极区域的区域，以及第一栅极电极，第二栅极绝缘层和第二栅极电极， 在第一栅极绝缘层上。 有机发光显示装置（OLED）可以包括非易失性存储装置。