公开(公告)号：US20100315880A1

公开(公告)日：2010-12-16

申请号：US12814451

申请日：2010-06-12

Applicant: BYOUNG IN JOO

Inventor： BYOUNG IN JOO

IPC: G11C16/06

CPC classification number: G06F11/1048 ,  G11C16/10 ,  G11C16/3454 ,  G11C16/3459 ,  G11C2216/14

Abstract: A nonvolatile memory device is operated by, inter alia, performing a program operation on memory cells belonging to a page selected from among a plurality of pages, performing a verification operation on the programmed memory cells, loading a start loop value of a fail bit count set to the selected page, from among start loop values of fail bit counts set to the respective pages, and if a loop value of the program operation is greater than or equal to the start loop value, counting a number of fail bits included in data of the programmed memory cells detected in the verification operation.

Abstract translation: 非易失性存储器件通过尤其对属于从多个页面中选择的页面的存储器单元执行编程操作来操作，对所编程的存储器单元执行验证操作，加载故障位计数的启动循环值 设置到所选择的页面，从设置到各个页面的故障位计数的起始循环值中，并且如果程序操作的循环值大于或等于起始循环值，则对包含在数据中的故障位数进行计数 在验证操作中检测到​​的编程存储器单元。

公开(公告)号：US09508453B2

公开(公告)日：2016-11-29

申请号：US13494492

申请日：2012-06-12

Applicant: Byoung-In Joo ,  Chul-Woo Yang

Inventor： Byoung-In Joo ,  Chul-Woo Yang

IPC: G11C29/24 ,  G11C16/20 ,  G11C15/00

CPC classification number: G11C29/24 ,  G11C15/00 ,  G11C16/20

Abstract: A semiconductor memory device includes a normal data storage block configured to store a normal data, a setup data storage block for storing a setup data including at least two duplicate data, an access unit configured to access the normal data of the normal data storage block or the setup data of the setup data storage block, a first transfer unit configured to transfer the setup data accessed by the access unit, a data decision unit configured to determine a correct data based on the setup data transferred by the first transfer unit, a second transfer unit configured to transfer the normal data accessed by the access unit, and a data output unit configured to output the setup data transferred by the first transfer unit or the normal data transferred by the second transfer unit to the outside of the semiconductor memory device in response to a control signal.

Abstract translation: 一种半导体存储装置，包括被配置为存储正常数据的正常数据存储块，用于存储包括至少两个重复数据的建立数据的建立数据存储块，被配置为访问正常数据存储块的正常数据的访问单元， 设置数据存储块的设置数据，被配置为传送由访问单元访问的设置数据的第一传送单元，被配置为基于由第一传送单元传送的设置数据来确定正确数据的数据判定单元，第二传送单元 传送单元，被配置为传送由访问单元访问的正常数据;以及数据输出单元，被配置为将由第一传送单元传送的设置数据或由第二传送单元传送的正常数据输出到半导体存储设备的外部 对控制信号的响应。

公开(公告)号：US20100329018A1

公开(公告)日：2010-12-30

申请号：US12826936

申请日：2010-06-30

Applicant: Byoung In JOO

Inventor： Byoung In JOO

IPC: G11C16/04

CPC classification number: G11C11/5642

Abstract: A nonvolatile memory device is operated by receiving a dual plane read command for simultaneously reading first and second planes, each comprising memory cells, receiving an MSB read address for reading data stored in the memory cells, checking whether an MSB program operation has been performed on each of the first and second planes, and performing the read operation on the first and second planes according to a result of the check and outputting the read data.

Abstract translation: 通过接收双平面读取命令来操作非易失性存储器件，用于同时读取第一和第二平面，每个平面包括存储器单元，接收用于读取存储在存储器单元中的数据的MSB读取地址，检查是否执行了MSB编程操作 每个第一和第二平面，并且根据检查的结果对第一和第二平面执行读取操作并输出读取的数据。

公开(公告)号：US20090231938A1

公开(公告)日：2009-09-17

申请号：US12117703

申请日：2008-05-08

Applicant: Byoung In JOO

Inventor： Byoung In JOO

IPC: G11C7/00 ,  G11C8/00

CPC classification number: G11C8/08 ,  G11C7/12

Abstract: A method of operating a non-volatile memory device reduces a time for discharging a precharged voltage when a program operation or a read operation is performed, thereby decreasing a total operation time of the non-volatile memory device. The non-volatile memory device discharges a bit line and a word line using only a control signal without reading an algorithm block when a precharged voltage is discharged. The method of operating a non-volatile memory device includes detecting an operation command; generating algorithm blocks for generating an operation voltage, for precharging a bit line and a word line, and for performing a specific operation in accordance with the operation command; outputting a discharge enable control signal for the bit line and the word line; and reading an algorithm of turning off and discharging a voltage generating means for generating the operation voltage.

Abstract translation: 操作非易失性存储器件的方法在执行程序操作或读取操作时减少了放电预充电电压的时间，从而减少了非易失性存储器件的总操作时间。 当预充电电压放电时，非易失性存储器件仅使用控制信号放电位线和字线而不读取算法块。 操作非易失性存储装置的方法包括检测操作命令; 产生用于产生操作电压的算法块，用于对位线和字线进行预充电，并且用于根据操作命令执行特定操作; 输出位线和字线的放电使能控制信号; 以及读取关闭和放电用于产生操作电压的电压产生装置的算法。