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11.发明授权Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures 有权量子隧穿器件和具有晶格失配的半导体结构的电路公开(公告)号：US08216951B2
公开(公告)日：2012-07-10
申请号：US12973616
申请日：2010-12-20
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L21/04
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译： 结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。 方法实施方案包括在晶格不匹配的材料上形成隧穿装置。
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12.发明申请Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures 有权量子隧穿装置和具有晶格不匹配的半导体结构的电路公开(公告)号：US20110086498A1
公开(公告)日：2011-04-14
申请号：US12973616
申请日：2010-12-20
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L21/04
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译： 结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。 方法实施方案包括在晶格不匹配的材料上形成隧穿装置。
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