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1.发明申请Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures 有权量子隧穿装置和具有晶格不匹配的半导体结构的电路公开(公告)号：US20120309113A1
公开(公告)日：2012-12-06
申请号：US13544661
申请日：2012-07-09
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译： 结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。 方法实施方案包括在晶格不匹配的材料上形成隧穿装置。
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2.发明授权Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures 有权量子隧穿器件和具有晶格失配的半导体结构的电路公开(公告)号：US07875958B2
公开(公告)日：2011-01-25
申请号：US11862850
申请日：2007-09-27
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L29/30
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译： 结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。 方法实施方案包括在晶格不匹配的材料上形成隧穿装置。
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3.发明申请SEMICONDUCTOR SENSOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DENSITIES AND RELATED METHODS FOR THE SAME 有权具有减少偏差缺陷密度的半导体传感器结构及其相关方法公开(公告)号：US20100078680A1
公开(公告)日：2010-04-01
申请号：US12565863
申请日：2009-09-24
IPC分类号： H01L31/112 , H01L31/18 , H01L31/0248
CPC分类号： H01L27/14689 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02639 , H01L21/02647 , H01L21/76224 , H01L27/1446 , H01L27/14612 , H01L27/14643 , H01L31/0304 , H01L31/03046 , H01L31/0312 , H01L31/103 , H01L31/1037 , H01L31/105 , Y02E10/544 , Y02P70/521
摘要： Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
摘要翻译： 非硅基半导体器件通过使用纵横比捕获材料集成到硅制造工艺中。 在结晶材料的至少一部分中的非硅光感测装置可以输出由其中的光吸收产生的电子。 示例性的光感测装置可以具有相对较大的微米尺寸。 作为示例性应用，通过结合纵横比捕获技术在硅衬底上形成互补金属氧化物半导体光电探测器。
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4.发明申请QUANTUM TUNNELING DEVICES AND CIRCUITS WITH LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES 有权量子隧道装置和电路与狭窄的半导体结构公开(公告)号：US20080073641A1
公开(公告)日：2008-03-27
申请号：US11862850
申请日：2007-09-27
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L29/88 , H01L21/329 , H01L27/06
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译： 结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。 方法实施方案包括在晶格不匹配的材料上形成隧穿装置。
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公开(公告)号：US09508890B2
公开(公告)日：2016-11-29
申请号：US12100131
申请日：2008-04-09
申请人： Jizhong Li , Anthony J. Lochtefeld , Calvin Sheen , Zhiyuan Cheng
发明人： Jizhong Li , Anthony J. Lochtefeld , Calvin Sheen , Zhiyuan Cheng
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0693
CPC分类号： H01L31/035281 , H01L21/0262 , H01L31/047 , H01L31/0687 , H01L31/0693 , H01L31/184 , H01L31/1852 , H01S2304/12 , Y02E10/544 , Y02P70/521
摘要： Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.
摘要翻译： 包括设置在设置在基板上的非结晶掩模层中限定的开口中的结晶材料的结构。 光伏电池可以设置在结晶材料上方。
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6.发明授权Method for semiconductor sensor structures with reduced dislocation defect densities 有权具有减少位错缺陷密度的半导体传感器结构的方法公开(公告)号：US08809106B2
公开(公告)日：2014-08-19
申请号：US13594519
申请日：2012-08-24
IPC分类号： H01L21/00 , H01L21/02 , H01L31/105
CPC分类号： H01L27/14689 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02639 , H01L21/02647 , H01L21/76224 , H01L27/1446 , H01L27/14612 , H01L27/14643 , H01L31/0304 , H01L31/03046 , H01L31/0312 , H01L31/103 , H01L31/1037 , H01L31/105 , Y02E10/544 , Y02P70/521
摘要： Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
摘要翻译： 非硅基半导体器件通过使用纵横比捕获材料集成到硅制造工艺中。 在结晶材料的至少一部分中的非硅光感测装置可以输出由其中的光吸收产生的电子。 示例性的光感测装置可以具有相对较大的微米尺寸。 作为示例性应用，通过结合纵横比捕获技术在硅衬底上形成互补金属氧化物半导体光电探测器。
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公开(公告)号：US20080257409A1
公开(公告)日：2008-10-23
申请号：US12100131
申请日：2008-04-09
申请人： Jizhong Li , Anthony J. Lochtefeld , Calvin Sheen , Zhiyuan Cheng
发明人： Jizhong Li , Anthony J. Lochtefeld , Calvin Sheen , Zhiyuan Cheng
IPC分类号： H01L31/00
CPC分类号： H01L31/035281 , H01L21/0262 , H01L31/047 , H01L31/0687 , H01L31/0693 , H01L31/184 , H01L31/1852 , H01S2304/12 , Y02E10/544 , Y02P70/521
摘要： Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.
摘要翻译： 包括设置在设置在基板上的非结晶掩模层中限定的开口中的结晶材料的结构。 光伏电池可以设置在结晶材料上方。
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公开(公告)号：US08629047B2
公开(公告)日：2014-01-14
申请号：US13544661
申请日：2012-07-09
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L21/8232
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
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9.发明授权公开(公告)号：US08253211B2
公开(公告)日：2012-08-28
申请号：US12565863
申请日：2009-09-24
IPC分类号： H01L21/14
CPC分类号： H01L27/14689 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02639 , H01L21/02647 , H01L21/76224 , H01L27/1446 , H01L27/14612 , H01L27/14643 , H01L31/0304 , H01L31/03046 , H01L31/0312 , H01L31/103 , H01L31/1037 , H01L31/105 , Y02E10/544 , Y02P70/521
摘要： Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
摘要翻译： 非硅基半导体器件通过使用纵横比捕获材料集成到硅制造工艺中。 在结晶材料的至少一部分中的非硅光感测装置可以输出由其中的光吸收产生的电子。 示例性的光感测装置可以具有相对较大的微米尺寸。 作为示例性应用，通过结合纵横比捕获技术在硅衬底上形成互补金属氧化物半导体光电探测器。
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10.发明申请Semiconductor Sensor Structures with Reduced Dislocation Defect Densities and Related Methods for the Same 有权具有减少位错缺陷密度的半导体传感器结构及其相关方法公开(公告)号：US20130029449A1
公开(公告)日：2013-01-31
申请号：US13594519
申请日：2012-08-24
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02639 , H01L21/02647 , H01L21/76224 , H01L27/1446 , H01L27/14612 , H01L27/14643 , H01L31/0304 , H01L31/03046 , H01L31/0312 , H01L31/103 , H01L31/1037 , H01L31/105 , Y02E10/544 , Y02P70/521
摘要： Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
摘要翻译： 非硅基半导体器件通过使用纵横比捕获材料集成到硅制造工艺中。 在结晶材料的至少一部分中的非硅光感测装置可以输出由其中的光吸收产生的电子。 示例性的光感测装置可以具有相对较大的微米尺寸。 作为示例性应用，通过结合纵横比捕获技术在硅衬底上形成互补金属氧化物半导体光电探测器。
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