公开(公告)号：US07192662B2

公开(公告)日：2007-03-20

申请号：US10909529

申请日：2004-08-02

Applicant: Chaopeng Chen ,  Kevin Lin ,  Jei Wei Chang

Inventor： Chaopeng Chen ,  Kevin Lin ,  Jei Wei Chang

IPC: G11B5/33

CPC classification number: C25D5/18 ,  C25D3/562 ,  C25D5/006 ,  C25D7/001 ,  G11B5/3109 ,  G11B5/3163 ,  H01F10/16 ,  H01F41/26 ,  Y10T428/115 ,  Y10T428/12493

Abstract: A plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100-a-bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method that produces the alloy includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.

Abstract translation: 具有高饱和磁化强度和低矫顽力的电镀磁性薄膜具有一般形式，其中M可以是 Mo，Cr，W，Ni或Rh，其适用于写在窄轨道宽度，高矫顽力介质上的磁记录头。 生产合金的电镀方法包括四个电流施加工艺：直流，脉冲电流，脉冲反向电流和调节脉冲反向电流。

公开(公告)号：US20050231856A1

公开(公告)日：2005-10-20

申请号：US10827950

申请日：2004-04-20

Applicant: Stuart Kao ,  Chunping Luo ,  Chaopeng Chen ,  Takahiko Machita ,  Daisuke Miyauchi ,  Jeiwei Chang

Inventor： Stuart Kao ,  Chunping Luo ,  Chaopeng Chen ,  Takahiko Machita ,  Daisuke Miyauchi ,  Jeiwei Chang

IPC: G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F41/308 ,  Y10T29/49021 ,  Y10T29/49037 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A GMR read pillar formed by ion milling has both vertical and sloping sidewall sections with the free layer normally being located within the latter. Using xenon as the sputtering gas enables the vertical section of the pedestal to be made longer, relative to the sloping portion, without requiring an increase in the sputtering rate, so the free layer can have vertical sidewalls. This allows the point at which milling is terminated to be controlled more precisely and, by more precisely defining the width of the free layer, also improves design tolerances.

Abstract translation: 通过离子铣削形成的GMR读柱具有垂直和倾斜的侧壁部分，自由层通常位于后侧。 使用氙作为溅射气体使得能够使基座的垂直部分相对于倾斜部分更长，而不需要增加溅射速率，因此自由层可具有垂直侧壁。 这允许更精确地控制铣削终点的点，并且通过更精确地限定自由层的宽度也提高了设计公差。