公开(公告)号：US20050003675A1

公开(公告)日：2005-01-06

申请号：US10863590

申请日：2004-06-07

Applicant: James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

Inventor： James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/311 ,  H01L21/60 ,  H01L21/683 ,  H01L21/687 ,  H01L21/768 ,  C23F1/00

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Abstract translation: 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US06364957B1

公开(公告)日：2002-04-02

申请号：US09498795

申请日：2000-02-08

Applicant: Gerhard M. Schneider ,  Hamid Noorbakhsh ,  Bryan Pu ,  Kaushik Vaidya ,  Brad Leroy Mays ,  Hung Dao ,  Evans Lee ,  Hongging Shan

Inventor： Gerhard M. Schneider ,  Hamid Noorbakhsh ,  Bryan Pu ,  Kaushik Vaidya ,  Brad Leroy Mays ,  Hung Dao ,  Evans Lee ,  Hongging Shan

IPC: C23C1600

CPC classification number: H01L21/67103 ,  C23C16/4585 ,  H01J37/32082 ,  H01J2237/2001

Abstract: A substrate support assembly 30 comprises a substrate support 38 and a collar 130 which may comprise at least one slit 150. The slit allows for thermal expansion compensation in the support assembly 30. The collar 130 may, for example, protect the dielectric 45 from erosion in a process chamber 25. In one version, the collar 130 comprises a clamping ring 200 on the dielectric 45.

Abstract translation: 衬底支撑组件30包括衬底支撑件38和可包括至少一个狭缝150的套环130.狭缝允许在支撑组件30中进行热膨胀补偿。套环130可以例如保护电介质45免受侵蚀 在一个版本中，套环130包括在电介质45上的夹紧环200。

公开(公告)号：US20080066785A1

公开(公告)日：2008-03-20

申请号：US11836092

申请日：2007-08-08

Applicant: Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark van der Pyl ,  Tetsuya Ishikawa ,  Evans Lee

Inventor： Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark van der Pyl ,  Tetsuya Ishikawa ,  Evans Lee

IPC: B08B9/08

CPC classification number: H01J37/32623 ,  H01J37/3266 ,  Y10S156/916

Abstract: A method of refurbishing a wall of a plasma process chamber which has a surface with a magnet assembly fitted thereon. The magnet assembly has an expandable hollow collar with a plurality of magnets inside. In the method, the diameter of the hollow collar of the magnet assembly is expanded to remove the hollow collar from the wall. The surface of the wall is cleaned. The hollow collar of the original magnet assembly, or of another magnet assembly, is then snap fitted back onto the surface of the wall.

Abstract translation: 一种对具有安装在其上的磁体组件的表面的等离子体处理室的壁进行翻新的方法。 磁体组件具有可扩展的空心套环，内部具有多个磁体。 在该方法中，磁体组件的空心轴环的直径被膨胀以从壁上移除空心轴环。 墙壁的表面被清洁。 然后将原始磁体组件或另一个磁体组件的空心凸缘卡扣到壁的表面上。

公开(公告)号：US07294224B2

公开(公告)日：2007-11-13

申请号：US10726008

申请日：2003-12-01

Applicant: Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark van der Pyl ,  Tetsuya Ishikawa ,  Evans Lee

Inventor： Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark van der Pyl ,  Tetsuya Ishikawa ,  Evans Lee

IPC: H01L21/00

CPC classification number: H01J37/32623 ,  H01J37/3266 ,  Y10S156/916

Abstract: A magnet assembly for a plasma process chamber has a hollow collar comprising a cross-section that is absent seams. The hollow collar has an open end face and a cap is provided to seal the open end face of the collar. A plurality of magnets are in the hollow collar, the magnets being insertable through the open end face. The collar is capable of being snap fitted onto the chamber wall. The magnet assembly can also comprise one or more of the collars such that the collars, when installed, form a substantially continuous ring about a chamber wall.

Abstract translation: 用于等离子体处理室的磁体组件具有包括不存在接缝的横截面的中空轴环。 空心轴环具有敞开的端面，并且设有盖以密封轴环的开口端面。 多个磁体位于空心环中，磁体可通过开口端面插入。 套环能够被卡扣到室壁上。 磁体组件还可以包括一个或多个轴环，使得套环在安装时围绕室壁形成基本上连续的环。

公开(公告)号：US5605637A

公开(公告)日：1997-02-25

申请号：US356825

申请日：1994-12-15

Applicant: Hongching Shan ,  Evans Lee ,  Robert Wu

Inventor： Hongching Shan ,  Evans Lee ,  Robert Wu

IPC: H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

Abstract: A plasma chamber, and a related method for its use, in which the direct current (dc) bias on a wafer-supporting cathode is reduced by including a plasma shield that blocks plasma from reaching a region of the chamber and thereby reduces the effective surface area of a grounded anode electrode. The plasma shield has a number of narrow slits through it, small enough to preclude the passage of plasma through the shield, but large enough to permit pumping of process gases through the shield. The dc bias is further controllable by installing a chamber liner of dielectric or other material to cover a selected portion of the inside walls of the chamber. The liner also facilitates cleaning of the chamber walls to remove deposits resulting from plasma polymerization.

Abstract translation: 一种等离子体室及其使用的相关方法，其中通过包括阻挡等离子体到达腔室的区域的等离子体屏蔽来减小晶片支撑阴极上的直流（dc）偏压，从而降低有效表面 接地阳极电极的面积。 等离子体屏蔽件具有许多通过其的狭窄的狭缝，其足够小以阻止等离子体通过屏蔽件，但足够大以允许工艺气体通过屏蔽件泵送。 通过安装电介质或其它材料的室衬套以覆盖室的内壁的选定部分，可以进一步控制直流偏压。 内衬还有助于清洁室壁以去除由等离子体聚合产生的沉积物。