公开(公告)号：US20050003675A1

公开(公告)日：2005-01-06

申请号：US10863590

申请日：2004-06-07

申请人： James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

发明人： James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/311 ,  H01L21/60 ,  H01L21/683 ,  H01L21/687 ,  H01L21/768 ,  C23F1/00

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US20070091535A1

公开(公告)日：2007-04-26

申请号：US11561112

申请日：2006-11-17

申请人： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael Welch

发明人： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael Welch

IPC分类号： H01H47/26 ,  H01H47/32 ,  H01H50/12

CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4411 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/2001

摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.

摘要翻译： 一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。 腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。 热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。 通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

公开(公告)号：US06432259B1

公开(公告)日：2002-08-13

申请号：US09461682

申请日：1999-12-14

申请人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

发明人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

IPC分类号： H05H100

CPC分类号： H01J37/32522 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.

摘要翻译： 体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。 用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。 冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

公开(公告)号：US06232236B1

公开(公告)日：2001-05-15

申请号：US09365999

申请日：1999-08-03

申请人： Hongqing Shan ,  Claes Bjorkman ,  Paul Luscher ,  Richard Mett ,  Michael Welch

发明人： Hongqing Shan ,  Claes Bjorkman ,  Paul Luscher ,  Richard Mett ,  Michael Welch

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.

摘要翻译： 一种用于控制等离子体处理系统中的等离子体的装置和方法。 该装置包括由RF信号驱动的处理套件包围的晶片支撑台座。 基座中的电极（阴极）和处理套件都用RF信号驱动，以在基座上建立初级等离子体，并在工艺组件上方形成二次等离子体。

公开(公告)号：US6113731A

公开(公告)日：2000-09-05

申请号：US735444

申请日：1997-01-02

申请人： Hongching Shan ,  Roger Lindley ,  Claes Bjorkman ,  Xue Yu Qian ,  Richard Plavidal ,  Bryan Pu ,  Ji Ding ,  Zongyu Li ,  Kuang-Han Ke ,  Michael Welch

发明人： Hongching Shan ,  Roger Lindley ,  Claes Bjorkman ,  Xue Yu Qian ,  Richard Plavidal ,  Bryan Pu ,  Ji Ding ,  Zongyu Li ,  Kuang-Han Ke ,  Michael Welch

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32623 ,  H01J37/3266 ,  H01L21/68735

摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.

摘要翻译： 具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积 ，和（ii）从工件表面朝向等离子体垂直延伸的矢量。 或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。 南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。 本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。 在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

公开(公告)号：US06822185B2

公开(公告)日：2004-11-23

申请号：US10267711

申请日：2002-10-08

申请人： Michael Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Rolf Guenther ,  Zhong Qiang Hua ,  Son Phi ,  Peter Loewenhardt

发明人： Michael Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Rolf Guenther ,  Zhong Qiang Hua ,  Son Phi ,  Peter Loewenhardt

IPC分类号： B23K900

CPC分类号： H01L21/67248 ,  H01J37/32458 ,  H01J37/32522 ,  H01L21/67109

摘要： The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

摘要翻译： 半导体制造工具的等离子体室的温度通过各种技术单独地或组合地保持基本恒定。 一种技术是提供等离子体室圆顶的外表面，其中多个翼片突出到上覆气流的高速区域，以便从腔室散发热量。 覆盖在圆顶外露的外表面上的覆盖层限定的管道还可以具有突出的唇缘或翼型件，以将气流的高速分量置于外部圆顶表面和翅片内。 其他技术包括采用高速风扇来控制气流循环，以及使用温度传感器通过处理器通风风扇来控制风扇速度，从而调节室温。

公开(公告)号：US6074514A

公开(公告)日：2000-06-13

申请号：US20959

申请日：1998-02-09

申请人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

发明人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02

CPC分类号： H01J37/32871

摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

公开(公告)号：US06387288B1

公开(公告)日：2002-05-14

申请号：US09556951

申请日：2000-04-21

申请人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

发明人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

IPC分类号： H01L21302

CPC分类号： H01J37/32871

摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

摘要翻译： 在蚀刻剂气体进入等离子体反应器的初级处理室之前，从蚀刻剂气体形成的等离子体中清除蚀刻剂物质的装置和方法。 至少有一个清除室，每个清除室在其入口处连接到蚀刻剂气体源，并在其出口连接到主处理室的气体分配装置。 每个清扫室具有辐射施加器，其辐射扫气室的内部，并从流化床中的蚀刻剂气体从蚀刻剂气体源到主处理室的气体分配装置产生等离子体。 施加器使用感应放电，电容放电，直流（DC）放电或微波放电来照射扫气室的内部并点燃等离子体。 清扫室内还设有一种蚀刻物质清除源。 该源提供与等离子体相互作用的清除材料，以清除由等离子体中的蚀刻剂气体解离产生的蚀刻剂物质，并形成由来自蚀刻剂物质和清除源的物质构成的蚀刻副产物。 清除室可以按原样或以改进形式用作激发室，以在最佳条件下激发气体并将改性气体进料到主室中。 如果该源与被激发的气体不利地相互作用，则通过去除其清除源来改进扫气室。

公开(公告)号：US5843847A

公开(公告)日：1998-12-01

申请号：US639388

申请日：1996-04-29

申请人： Bryan Pu ,  Hongching Shan ,  Michael Welch

发明人： Bryan Pu ,  Hongching Shan ,  Michael Welch

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116

摘要： A method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, the substrate is placed in a process zone, and a plasma is formed from process gas introduced into the process zone. The process gas comprises (i) fluorocarbon gas for etching the dielectric layer and for forming passivating deposits on the substrate, (ii) carbon-oxygen gas for enhancing formation of the passivating deposits, and (iii) nitrogen-containing gas for etching the passivating deposits on the substrate. The volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected to provide a dielectric to resist etching selectivity ratio of at least about 10:1, an etch rate microloading of

摘要翻译： 描述了以高蚀刻选择性，低刻蚀速率微载物和高蚀刻速率蚀刻衬底上的电介质层的方法。 在该方法中，将衬底放置在工艺区域中，并且将等离子体从引入工艺区域的工艺气体形成。 工艺气体包括（i）用于蚀刻介电层并用于在衬底上形成钝化沉积物的碳氟化合物气体，（ii）用于增强钝化沉积物形成的碳 - 氧气，和（iii）用于蚀刻钝化的含氮气体 沉积在基材上。 选择氟碳：碳 - 氧：含氮气体的体积流量比以提供电介质以抵抗至少约10:1的蚀刻选择率，<10％的蚀刻速率微载荷，以及在 至少约100nm / min。 优选地，选择氟碳：碳 - 氧：含氮气体的体积流量比，使得新蚀刻特征的侧壁上的钝化沉积物的形成速率近似等于钝化沉积物的去除速率。

公开(公告)号：US5740009A

公开(公告)日：1998-04-14

申请号：US758531

申请日：1996-11-29

申请人： Bryan Pu ,  Hongching Shan ,  Kuang-Han Ke ,  Michael Welch ,  Semyon Sherstinsky ,  Alfred Mak ,  Ling Chen ,  Sue Zhang ,  Leonel Arturo Zuniga ,  Samuel C. Wilson

发明人： Bryan Pu ,  Hongching Shan ,  Kuang-Han Ke ,  Michael Welch ,  Semyon Sherstinsky ,  Alfred Mak ,  Ling Chen ,  Sue Zhang ,  Leonel Arturo Zuniga ,  Samuel C. Wilson

IPC分类号： H01L21/683 ,  H01L21/687 ,  H02N13/00

CPC分类号： H01L21/68735 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.

摘要翻译： 用于保持具有改进的晶片和卡盘边缘保护的晶片的装置包含限定基座的保护环，并被偏置以与晶片的背面恒定接触。 偏置元件均匀地将保护环偏压成与晶片的周缘接触。 保护环具有环形平面形式，其环绕静电卡盘以将晶片保持在文具位置。 环的垂直行程受到由突出于保护环上的聚焦环的一部分形成的硬停止的限制。 在将晶片放置在卡盘上并且夹持力能够实现之后，夹紧力容易地克服保护环上的偏压力并且晶片搁置在卡盘支撑表面上。 保护环接触晶片的背面以确保基座和静电卡盘不暴露于等离子体，并且当使用硅保护环时，晶片的有效面积延伸超过晶片的物理尺寸以便于 在晶片上更均匀的等离子体分布。