SPEAKER DIAPHRAGM AND ITS MANUFACTURING METHOD
    12.
    发明申请
    SPEAKER DIAPHRAGM AND ITS MANUFACTURING METHOD 有权
    扬声器胶片及其制造方法

    公开(公告)号:US20140054104A1

    公开(公告)日:2014-02-27

    申请号:US13939933

    申请日:2013-07-11

    CPC classification number: H04R31/003 H04R7/125 H04R2307/023

    Abstract: A speaker diaphragm structure includes a speaker diaphragm and a coating formed on the speaker diaphragm and is composed of at least one dense layer and relatively porous layer alternately arranged with respect to the at least one dense layer.

    Abstract translation: 扬声器振膜结构包括扬声器振膜和形成在扬声器振膜上的涂层,并且由至少一个相对于至少一个致密层交替布置的致密层和相对多孔层构成。

    Multi-Layered Phase-Change Memory Device
    13.
    发明申请
    Multi-Layered Phase-Change Memory Device 有权
    多层相变存储器件

    公开(公告)号:US20130292631A1

    公开(公告)日:2013-11-07

    申请号:US13874411

    申请日:2013-04-30

    Abstract: The invention discloses a phase-change memory device structure and the materials used. The structure includes a substrate; a single or multiple sandwich-memory-unit(s); a first and a second electrode electrically connecting to the first and the second sides of the sandwich-memory-units and a dielectric layer used as the insulator required by the memory device. The sandwich-memory-unit composes of a memory-layer, thinner than 30 nm, sandwiched between an upper and a lower barrier-layers. The barrier-layer is either an electrical conductor in case of vertical memory-cells or an electrical insulator in case of parallel memory-cells. The sandwich-memory-unit is characteristic of increased crystallization temperature of at least 50° C. as the thickness of the memory-layer is reduced from 15 to 5 nm; and the volume change of the memory-layer is less than 3% during phase change. The thickness and memory-material in each sandwich-memory-unit can be different in the multiple sandwich-memory-units.

    Abstract translation: 本发明公开了一种相变存储器件结构和所使用的材料。 该结构包括基底; 一个或多个三明治记忆单元; 电连接到夹层存储单元的第一和第二侧的第一和第二电极以及用作存储器件所需的绝缘体的电介质层。 夹层记忆单元由薄层和30nm以下的记录层组成,夹在上下阻挡层之间。 在垂直存储单元的情况下,阻挡层是电导体,或者在并行存储单元的情况下为电绝缘体。 随着记忆层的厚度从15nm降低到5nm,夹层记忆单元是结晶温度升高至少50℃的特征。 在相变期间内存层的体积变化小于3%。 每个夹层存储单元中的厚度和记忆材料在多个夹层存储单元中可以是不同的。

    Electrochromic material and method for making the same

    公开(公告)号:US20030099849A1

    公开(公告)日:2003-05-29

    申请号:US10303145

    申请日:2002-11-21

    CPC classification number: G02F1/1523 Y10S428/936

    Abstract: A method for forming an electrochromic material includes the steps of (a) forming a transparent conductive film on a transparent substrate, (b) forming a metal film on the transparent conductive film by electroless plating, and (c) oxidizing the metal film to form a metal oxide film, which exhibits electrochromic characteristics on the transparent conductive film.

    Automated optical double-sided inspection apparatus

    公开(公告)号:US12188877B2

    公开(公告)日:2025-01-07

    申请号:US18069954

    申请日:2022-12-21

    Abstract: An automated optical double-sided inspection apparatus includes a first image-capturing portion, a second image-capturing portion, a platform, a first light-blocking portion, a second light-blocking portion, and a processing portion. The platform carries an external object. When the processing portion operates in a first capturing mode, the second light-blocking portion blocks visible light from passing therethrough, while the first light-blocking portion allows visible light to pass therethrough, so that the first image-capturing portion shoots a first side of the external object through the first light-blocking portion to obtain a first image. When the processing portion operates in a second capturing mode, the first light-blocking portion blocks visible light from passing therethrough, while the second light-blocking portion allows visible light to pass therethrough, so that the second image-capturing portion shoots a second side of the external object through the second light-blocking portion to obtain a second image.

    Handheld system of automatic acupoint stimulation

    公开(公告)号:US12036179B2

    公开(公告)日:2024-07-16

    申请号:US17112429

    申请日:2020-12-04

    Abstract: A handheld system of automatic acupoint stimulation has a case, a camera unit, a storage unit, a human-machine-interface (HMI) unit, a processing unit, an acupoint recognizing unit, and an acupoint stimulating unit. The case has an accommodating space and a handle portion. The camera unit is to capture an image from a body part of a user. The storage unit is to store multiple predetermined acupoint data. The HMI unit is to receive an input signal. The processing unit searches for at least one predetermined acupoint datum that is corresponding to the input signal. The acupoint recognizing unit is to receive the at least one predetermined acupoint datum and obtain a reference length and a beginning basis to locate the acupoint. The acupoint stimulating unit is to stimulate the acupoint of the user located by the acupoint recognizing unit.

    Highly Dense Luminescent Composite Material Production Method and Light Emitting Diode Thereof

    公开(公告)号:US20240034928A1

    公开(公告)日:2024-02-01

    申请号:US17994899

    申请日:2022-11-28

    Inventor: Chun-Feng Lai

    CPC classification number: C09K11/08

    Abstract: Present invention is related to a highly dense luminescent composite material having a luminescent material uniformly being coated by a highly dense coating. The luminescent material of the present invention comprises any suitable QDs or a fluorescent material and the highly dense coating contains Na-poly(Al—O—Si) nanocomposites. The present invention can provide a high thermal resistance and reliability performance by the highly dense outer layer. When applying to the backlight module, the present invention could efficiently increase the luminous efficiency and the color standard of LCD. When applying to the light emitting applications, the present invention could also improve its luminous efficiency and prolong the duration for the light emitting composite material. The production method of the highly dense composite in the present invention is simple and reliable which could be easily introduced into the market with great economic benefits and values. The present invention is a revolution and great achievement for improving the entertainment, medical diagnosis, and e-commerce technologies.

    Method for generating virtual navigation route

    公开(公告)号:US11796337B2

    公开(公告)日:2023-10-24

    申请号:US17367997

    申请日:2021-07-06

    Abstract: The present invention provides a method for generating a virtual navigation route, by obtaining multiple navigation points each with a flag data; identifying at least two lanes from a front video data; creating a navigation characteristic image according to the flag data, the navigation points, the front video data, and the at least two lanes, wherein the navigation characteristic image has multiple dotted grids; calculating a probability of a navigation route passing through each dotted grid, and setting the dotted grid with the highest probability calculated in each row of the navigation characteristic image as a first default value; and fitting curves for the grids with the first default value as the navigation route; the navigation route is generated in real time and projected over the front video data using an augmented reality (AR) method, achieving AR effects and navigating with better representation of the traffic.

    Transistor and amplifier thereof
    20.
    发明授权

    公开(公告)号:US11699980B2

    公开(公告)日:2023-07-11

    申请号:US17549850

    申请日:2021-12-13

    CPC classification number: H03F3/16

    Abstract: A transistor comprises a drain, a gate, a source, a body terminal and a body resistance. The drain is connected to a supply voltage line to receive a supply voltage. The gate is connected to a control voltage line to receive a control voltage. The source is connected to a input line to receive a input radio frequency signal. The body terminal is connected to the drain. The body resistance is disposed between the drain and the body terminal. By the foregoing configuration, the leakage current of the substrate is reduced and the threshold voltage of the transistor is reduced to conform to the present low power design.

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