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    EQUIVALENT GATE COUNT YIELD ESTIMATION FOR INTEGRATED CIRCUIT DEVICES
    11.
    发明申请
    EQUIVALENT GATE COUNT YIELD ESTIMATION FOR INTEGRATED CIRCUIT DEVICES 审中-公开
    集成电路设备的等效门计数估计

    公开(公告)号：US20090112352A1

    公开(公告)日：2009-04-30

    申请号：US12348549

    申请日：2009-01-05

    申请人： Thomas S. Barnett ,  Jeanne P. Bickford ,  William Y. Chang ,  Rashmi D. Chatty ,  Sebnem Jaji ,  Kerry A. Kravec ,  Wing L. Lai ,  Gie Lee ,  Brian M. Trapp ,  Alan J. Weger

    发明人： Thomas S. Barnett ,  Jeanne P. Bickford ,  William Y. Chang ,  Rashmi D. Chatty ,  Sebnem Jaji ,  Kerry A. Kravec ,  Wing L. Lai ,  Gie Lee ,  Brian M. Trapp ,  Alan J. Weger

    IPC分类号： G06F19/00

    CPC分类号： G06F17/5081 ,  G06F2217/10

    摘要： A storage medium including a method of modeling yield for semiconductor products includes determining expected faults for each of a plurality of library elements by running a critical area analysis on each of the library elements, and assessing, from the critical area analysis, an expected number of faults per unit area, and comparing the same to actual observed faults on previously manufactured semiconductor products. Thereafter, the expected number of faults for each library element is updated in response to observed yield. A database is established, which includes the die size and expected faults for each of the library elements. Integrated circuit product die size is estimated, and library elements to be used to create the integrated circuit die are selected. Fault and size data for each of the selected library elements are obtained, the adjusted estimated faults for each of the library elements are summed, and estimated yield is calculated.

    摘要翻译： 包括对半导体产品的产量建模的方法的存储介质包括通过对每个库元素运行关键区域分析来确定多个库元素中的每一个元素的预期故障，并且从临界区域分析来估计预期数量 每单位面积的故障，并将其与先前制造的半导体产品的实际观察到的故障进行比较。 此后，响应于观察到的产量，更新每个库元素的预期数量的故障。 建立了一个数据库，其中包括每个库元素的管芯大小和预期的故障。 集成电路产品芯片尺寸被估计，并且选择用于创建集成电路管芯的库元件。 获得每个所选库元素的故障和大小数据，对每个库元素的调整后的估计故障相加，并计算估计的收益率。

    Semiconductor device with dual gate oxides
    13.
    发明授权
    Semiconductor device with dual gate oxides 失效
    具有双栅极氧化物的半导体器件

    公开(公告)号：US07259071B2

    公开(公告)日：2007-08-21

    申请号：US10973852

    申请日：2004-10-25

    申请人： Inki Kim ,  Sang Yeon Kim ,  Min Paek ,  Chiew Sin Ping ,  Wan Gie Lee ,  Choong Shiau Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

    发明人： Inki Kim ,  Sang Yeon Kim ,  Min Paek ,  Chiew Sin Ping ,  Wan Gie Lee ,  Choong Shiau Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/823462 ,  H01L21/823481 ,  Y10S438/981

    摘要： A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.

    摘要翻译： 制造具有第一有源区和第二有源区的半导体器件的方法包括提供在衬底上限定第一有源区的第一和第二隔离结构。 第一有源区域使用第一工作电压，而第二有源区域使用不同于第一电压的第二工作电压。 形成覆盖第一和第二有源区的氮化物层。 形成覆盖氮化物层的氧化物层。 去除覆盖在第一有源区上的氧化物层的第一部分以露出氮化物层的第一部分。 使用湿蚀刻方法去除氮化物层的暴露的第一部分，同时留下覆盖第二有源区域的氮化物层的第二部分完好无损。 此后，在第一有源区上形成具有第一厚度的第一栅极氧化物，第一栅极氧化物具有面对第一隔离结构的第一边缘和面向第二隔离结构的第二边缘。 第一边缘与第一隔离结构隔开第一距离。 第二边缘与第二隔离结构隔开第二距离。 此后，在第二有源区上形成具有第二厚度的第二栅极氧化物，第二厚度不同于第一厚度。

    METHOD FOR IMPROVED EQUIVALENT GATE COUNT YIELD ESTIMATION FOR INTEGRATED CIRCUIT DEVICES
    14.
    发明申请
    METHOD FOR IMPROVED EQUIVALENT GATE COUNT YIELD ESTIMATION FOR INTEGRATED CIRCUIT DEVICES 失效
    用于集成电路设备的改进的等效门计数估计方法

    公开(公告)号：US20070265722A1

    公开(公告)日：2007-11-15

    申请号：US11382963

    申请日：2006-05-12

    申请人： Thomas Barnett ,  Jeanne Bickford ,  William Chang ,  Rashmi Chatty ,  Sebnem Jaji ,  Kerry Kravec ,  Wing Lai ,  Gie Lee ,  Brian Trapp ,  Alan Weger

    发明人： Thomas Barnett ,  Jeanne Bickford ,  William Chang ,  Rashmi Chatty ,  Sebnem Jaji ,  Kerry Kravec ,  Wing Lai ,  Gie Lee ,  Brian Trapp ,  Alan Weger

    IPC分类号： G06F19/00

    CPC分类号： G06F17/5081 ,  G06F2217/10

    摘要： A method of modeling yield for semiconductor products includes determining expected faults for each of a plurality of library elements by running a critical area analysis on each of the library elements, and assessing, from the critical area analysis, an expected number of faults per unit area, and comparing the same to actual observed faults on previously manufactured semiconductor products. Thereafter, the expected number of faults for each library element is updated in response to observed yield. A database is established, which includes the die size and expected faults for each of the library elements. Integrated circuit product die size is estimated, and library elements to be used to create the integrated circuit die are selected. Fault and size data for each of the selected library elements are obtained, the adjusted estimated faults for each of the library elements are summed, and estimated yield is calculated.

    摘要翻译： 一种用于半导体产品的产量建模的方法包括通过对每个库元件运行关键区域分析来确定多个库元件中的每一个元素的预期故障，以及从关键区域分析来估计每单位面积的预期故障数量 并将其与先前制造的半导体产品的实际观察到的故障进行比较。 此后，响应于观察到的产量，更新每个库元素的预期数量的故障。 建立了一个数据库，其中包括每个库元素的管芯大小和预期的故障。 集成电路产品芯片尺寸被估计，并且选择用于创建集成电路管芯的库元件。 获得每个所选库元素的故障和大小数据，对每个库元素的调整后的估计故障相加，并计算估计的收益率。

    Semiconductor device with dual gate oxides
    15.
    发明授权
    Semiconductor device with dual gate oxides 有权
    具有双栅极氧化物的半导体器件

    公开(公告)号：US06818514B2

    公开(公告)日：2004-11-16

    申请号：US10377167

    申请日：2003-02-26

    申请人： Inki Kim ,  Sang Yeon Kim ,  Min Paek ,  Chiew Sin Ping ,  Wan Gie Lee ,  Choong Shiau Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

    发明人： Inki Kim ,  Sang Yeon Kim ,  Min Paek ,  Chiew Sin Ping ,  Wan Gie Lee ,  Choong Shiau Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

    IPC分类号： H01L218234

    CPC分类号： H01L21/823462 ,  H01L21/823481 ,  Y10S438/981

    摘要： A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.

    摘要翻译： 制造具有第一有源区和第二有源区的半导体器件的方法包括提供在衬底上限定第一有源区的第一和第二隔离结构。 第一有源区域使用第一工作电压，而第二有源区域使用不同于第一电压的第二工作电压。 形成覆盖第一和第二有源区的氮化物层。 形成覆盖氮化物层的氧化物层。 去除覆盖在第一有源区上的氧化物层的第一部分以露出氮化物层的第一部分。 使用湿蚀刻方法去除氮化物层的暴露的第一部分，同时留下覆盖第二有源区域的氮化物层的第二部分完好无损。 此后，在第一有源区上形成具有第一厚度的第一栅极氧化物，第一栅极氧化物具有面对第一隔离结构的第一边缘和面向第二隔离结构的第二边缘。 第一边缘与第一隔离结构隔开第一距离。 第二边缘与第二隔离结构隔开第二距离。 此后，在第二有源区上形成具有第二厚度的第二栅极氧化物，第二厚度不同于第一厚度。

    Bacterial consortium EBC1000 and a method using the bacterial consortium EBC1000 for remedying biologically recalcitrant toxic chemicals contained in industrial wastewater, waste materials and soils
    16.
    发明授权
    Bacterial consortium EBC1000 and a method using the bacterial consortium EBC1000 for remedying biologically recalcitrant toxic chemicals contained in industrial wastewater, waste materials and soils 有权
    细菌联盟EBC1000和使用细菌联盟EBC1000的方法，用于补救工业废水，废料和土壤中含有的生物性顽固毒性化学物质

    公开(公告)号：US06383797B1

    公开(公告)日：2002-05-07

    申请号：US09787872

    申请日：2001-03-23

    申请人： Sung-gie Lee

    发明人： Sung-gie Lee

    IPC分类号： C12N120

    CPC分类号： C12R1/01 ,  B09C1/10 ,  C02F3/341 ,  C02F2101/30 ,  C02F2101/36 ,  C02F2101/38 ,  C02F2103/34 ,  C12P39/00

    摘要： The present invention relates to a novel bacterial consortium EBC1000 (KCTC 0652 BP) and a method for remedying biologically a chlorine compound and recalcitrant toxic chemicals contained in industrial wastewater, waste materials and soils using the bacterial consortium EBC1000. The novel bacterial consortium EBC1000(KCTC 0652 BP) is composed of aerobic bacterium easy to culture and useful for decomposing a chlorine compound and waste acidic or alkaline recalcitrant toxic chemicals of high concentration contained in the industrial waste materials, such as IPA, MC, DMA, AN, SHS, BD, Tamol-SN, EDTA, FES, TDDM, PMH, DEHA, MeOH, NaOH and CH3CN, thus preventing and recovering environmental pollutions.

    摘要翻译： 本发明涉及一种新型细菌联合体EBC1000（KCTC 0652 BP），以及使用细菌联盟EBC1000在工业废水，废料和土壤中生物地修复氯化合物和顽固有毒化学物质的方法。 新型细菌联合体EBC1000（KCTC 0652 BP）由易于培养的好氧细菌组成，可用于分解氯化合物和废弃工业废物中含有高浓度的酸性或碱性顽固有毒化学物质，如IPA，MC，DMA ，AN，SHS，BD，Tamol-SN，EDTA，FES，TDDM，PMH，DEHA，MeOH，NaOH和CH 3 CN，从而防止和回收环境污染。