Abstract:
A manufacturing method of blue phase liquid crystal (BPLC), comprising steps of: a temperature control step which controls a temperature of a liquid crystal (LC) mixture within a range of a coexistence temperature of the blue phase and the isotropic phase; a temperature descending step which descends the temperature of the LC mixture to an operation temperature of the blue phase, wherein the operation temperature of the blue phase is higher than the phase transition temperature of the blue phase and the lower temperature phase; and a repeating step which repeats the temperature control step and the temperature descending step.
Abstract:
An embodiment of the invention provides a manufacturing method of a thin-film transistor includes: providing a substrate; sequentially forming a gate electrode, a gate insulating layer, and an active layer on the substrate; forming an insulating metal oxide layer covering the active layer, wherein the insulating metal oxide layer including a metal oxide of a first metal; forming a metal layer covering the active layer, wherein the metal layer includes a second metal; forming a source electrode and a drain electrode on the metal layer with a trench separating therebetween; removing the metal layer exposed by the trench; and performing an annealing process to the metal layer and the insulating metal oxide layer, such that the metal layer reacts with the insulating metal oxide layer overlapping the metal layer to form a conducting composite metal oxide layer including the first metal and the second metal.
Abstract:
An organic light emitting diode (OLED) based display device including a pixel circuit that includes: an OLED to be connected to a first power terminal, a transistor connected to the OLED, a first capacitor connected to the transistor, a second capacitor connected to the first capacitor and the transistor, a first switch receiving a data signal and a scanning signal and connected to the first capacitor, a second switch connected to the transistor and receiving an enable signal, a third switch connected to the transistor and receiving a compensation signal, and a switching unit configured to transmit one of the enable signal, voltage at a terminal of the first capacitor, a reference signal and the scanning signal to a terminal of the transistor when operated in a conductive state.
Abstract:
A method of forming an alignment film is provided. A photosensitive polymer material is provided, wherein the photosensitive polymer material defines a first pixel area and a second pixel area respectively defining a first sub-pixel area and the second sub-pixel area. In a first exposure, the photosensitive polymer material is irradiate by a first exposure light and a second exposure light to form a first alignment portion and a second alignment portion with different alignment directions in the first sub-pixel of the first pixel area and the second sub-pixel of the second pixel area respectively. In a second exposure, the photosensitive polymer material is irradiated with the first exposure light and the second exposure light to form a third alignment portion and a fourth alignment portion with different alignment directions in the first sub-pixel of the second pixel area and the second sub-pixel of the first pixel area respectively.
Abstract:
An organic electroluminescent display (OELD) device at least includes a first assembly and a second assembly. The first assembly has a first substrate and an organic electroluminescent unit formed on the first substrate. The second assembly, assembled with the first assembly, includes a second substrate, a color filter layer and a patterned light-shielding layer. The color filter layer is disposed on the second substrate and has plural colored regions with different colors. The patterned light-shielding layer is disposed on the color filter layer and between the colored regions. A part of the patterned light-shielding layer contacts the first assembly to maintain a cell gap between the first assembly and the second assembly.
Abstract:
A 3D display device comprises display panel, light-guiding plate and light-emitting unit. The display panel comprises a plurality of sub-pixels with a first short-side width. The light-guiding plate comprises first flat surface, second flat surface, light input surface, and a plurality of light-guiding elements disposed at first flat surface or second flat surface. The light-emitting unit is disposed adjacent to the light input surface. Each light-guiding element comprises a curve shape with at least one inflection point, and a shift range of the curve shape is greater than zero and less than or equal to one and a half times the first short-side width. Light enters light-guiding plate and guided by light-guiding elements, and light is outputted in an alternating arrangement of at least one bright zone and at least one dark zone. A 3D display apparatus is also disclosed.
Abstract:
A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates and at the peripheral area. A patterned planarization layer is disposed on the first substrate. A passivation layer disposed between the seal and the first substrate, wherein the seal is in contact with a sidewall of the passivation layer.
Abstract:
A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is disposed in the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer. A passivation layer disposed on the portion of the metal layer and covering a sidewall of the patterned planarization layer to form a first passivation sidewall, wherein the seal is in contact with the first passivation sidewall.
Abstract:
An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.
Abstract:
A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates and at the peripheral area. A patterned planarization layer is disposed on the first substrate. A passivation layer disposed between the seal and the first substrate, wherein the seal is in contact with a sidewall of the passivation layer.