公开(公告)号：US20100139369A1

公开(公告)日：2010-06-10

申请号：US12698515

申请日：2010-02-02

Applicant: ING-SHIN CHEN ,  Jeffrey W. Neuner ,  Richard Kramer

Inventor： ING-SHIN CHEN ,  Jeffrey W. Neuner ,  Richard Kramer

IPC: G01N25/00

CPC classification number: H05B1/0288

Abstract: A system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions.

Abstract translation: 一种用于通过根据自适应反馈控制算法调整提供给这些元件的电力来控制元件的电加热以保持恒定电阻的系统和方法，其中所有参数是（1）任意选择的; （2）由受控元素的物理性质预先确定的; 或（3）实时测量。 与常规比例积分微分（PID）控制机制不同，本发明的系统和方法在与不同的受控元件结合使用时或在不同的操作条件下不需要重新调整比例常数，因此适应性 以控制元件和操作条件的变化。

公开(公告)号：US20090305427A1

公开(公告)日：2009-12-10

申请号：US12537910

申请日：2009-08-07

Applicant: Frank Dimeo, JR. ,  Philip S.H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Michele Stawasz ,  Thomas H. Baum ,  Mackenzie E. King ,  Ing-Shin Chen ,  Jeffrey F. Roeder

Inventor： Frank Dimeo, JR. ,  Philip S.H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Michele Stawasz ,  Thomas H. Baum ,  Mackenzie E. King ,  Ing-Shin Chen ,  Jeffrey F. Roeder

IPC: G01N33/00 ,  B01J19/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract translation: 用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的结构布置中的检测器采用微机电系统（MEMS） ）的器件结构和/或独立的金属元件，其在需要升高的温度感测时用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

公开(公告)号：US20050199496A1

公开(公告)日：2005-09-15

申请号：US11057594

申请日：2005-02-14

Applicant: Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

Inventor： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC: G01N33/00 ,  G01N27/26

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract translation: 用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的检测器 结构布置采用基于微机电系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

公开(公告)号：US07655887B2

公开(公告)日：2010-02-02

申请号：US11440241

申请日：2006-05-24

Applicant: Ing-Shin Chen ,  Jeffrey W. Neuner ,  Richard Kramer

Inventor： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Richard Kramer

IPC: H05B1/02

CPC classification number: H05B1/0288

Abstract: A system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions.

Abstract translation: 一种用于通过根据自适应反馈控制算法调整提供给这些元件的电力来控制元件的电加热以保持恒定电阻的系统和方法，其中所有参数是（1）任意选择的; （2）由受控元素的物理性质预先确定的; 或（3）实时测量。 与常规比例积分微分（PID）控制机制不同，本发明的系统和方法在与不同的受控元件结合使用时或在不同的操作条件下不需要重新调整比例常数，因此适应性 以控制元件和操作条件的变化。

公开(公告)号：US20050230258A1

公开(公告)日：2005-10-20

申请号：US11057735

申请日：2005-02-14

Applicant: Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

Inventor： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC: G01N33/00 ,  C25D5/48 ,  G01N27/26

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：US06900498B2

公开(公告)日：2005-05-31

申请号：US09681609

申请日：2001-05-08

Applicant: Gregory T. Stauf ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Ing-Shin Chen

Inventor： Gregory T. Stauf ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Ing-Shin Chen

IPC: H01L21/02 ,  H01L21/28 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L21/28291 ,  H01L28/55

Abstract: An integrated circuit barrier structure disposed between high dielectric constant metal oxide and Cu or Al electrodes, for preventing diffusion of species such as oxygen, bismuth, or lead from the high dielectric constant metal oxide into the Cu or Al electrodes. Such barrier structure also protects the Cu or Al electrodes against oxidization during deposition of the high dielectric constant metal oxide. The barrier structure can be formed as (1) a single layer of Pt, Ir, IrO2, Ir2O3, Ru, RuO2, CuO, Cu2O, Al2O3, or a binary or ternary metal nitride, e.g., TaN, NbN, HfN, ZrN, WN, W2N, TiN, TiSiN, TiAlN, TaSiN, or NbAlN, or (2) double or triple layers of such materials, e.g., Pt/TiAlN, Pt/IrO2, Pt/Ir, Ir/TiAlN, Ir/IrO2, IrO2/TiAlN, IrO2/Ir, or IrO2/Ir2O3/Ir. Such barrier structures enable Cu or Al electrodes to be used in combination with high dielectric constant metal oxides in microelectronic structures such as ferroelectric stack and trench capacitors, non-volatile ferroelectric memory cells, and dynamic random access memory (DRAM) cells.

Abstract translation: 设置在高介电常数金属氧化物和Cu或Al电极之间的集成电路阻挡结构，用于防止诸如氧，铋或铅的物质从高介电常数金属氧化物扩散到Cu或Al电极中。 这种阻挡结构还保护Cu或Al电极在沉积高介电常数金属氧化物期间免受氧化。 阻挡结构可以形成为（1）单层Pt，Ir，IrO 2，Ir 2 O 3，Ru，RuO CuO，Cu 2 O，Al 2 O 3 3，或二元或三元金属氮化物，例如 ，TaN，NbN，HfN，ZrN，WN，W 2 N，TiN，TiSiN，TiAlN，TaSiN或NbAlN，或（2）这种材料的双层或三层，例如Pt / TiAlN ，Pt / IrO 2，Pt / Ir，Ir / TiAlN，Ir / IrO 2，IrO 2 / TiAlN，IrO 2 Ir或IrO 2 / Ir 2 O 3 / Ir。 这种阻挡结构使得Cu或Al电极能够与诸如铁电堆和沟槽电容器，非易失性铁电存储器单元和动态随机存取存储器（DRAM）单元的微电子结构中的高介电常数金属氧化物组合使用。

公开(公告)号：US06692569B2

公开(公告)日：2004-02-17

申请号：US09939906

申请日：2001-08-27

Applicant: Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

Inventor： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

IPC: C30B2504

CPC classification number: H01L41/187 ,  C30B25/02 ,  C30B29/32

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Abstract translation: 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿晶体材料包括晶格A位点和B位，其中至少一个通过存在选自以下的取代基进行修饰：（i）A位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 钙钛矿晶体薄膜材料可以通过从薄膜的金属组分的金属有机前体的液体输送MOCVD形成，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非挥发性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。

公开(公告)号：US20080251104A1

公开(公告)日：2008-10-16

申请号：US12088825

申请日：2006-10-03

Applicant: Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

Inventor： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

IPC: B08B13/00

CPC classification number: H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

Abstract: Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

Abstract translation: 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括将清洁流体与要清洁的结构接触并产生具有对应于结构的清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

公开(公告)号：US07193187B2

公开(公告)日：2007-03-20

申请号：US10775473

申请日：2004-02-09

Applicant: Ing-Shin Chen ,  Jeffrey W. Neuner

Inventor： Ing-Shin Chen ,  Jeffrey W. Neuner

IPC: H05B1/02

CPC classification number: H05B1/0288

Abstract: The present invention relates to a system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions.

Abstract translation: 本发明涉及通过根据自适应反馈控制算法调整提供给这些元件的电力来控制元件的电加热以维持恒定电阻的系统和方法，其中所有参数是（1）任意选择的 ; （2）由受控元素的物理性质预先确定; 或（3）实时测量。 与常规比例积分微分（PID）控制机制不同，本发明的系统和方法在与不同的受控元件结合使用时或在不同的操作条件下不需要重新调整比例常数，因此适应性 以控制元件和操作条件的变化。

公开(公告)号：US20060219698A1

公开(公告)日：2006-10-05

申请号：US11440241

申请日：2006-05-24

Applicant: Ing-Shin Chen ,  Jeffrey Neuner ,  Richard Kramer

Inventor： Ing-Shin Chen ,  Jeffrey Neuner ,  Richard Kramer

IPC: H05B1/02

CPC classification number: H05B1/0288

Abstract: A system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions.

Abstract translation: 一种用于通过根据自适应反馈控制算法调整提供给这些元件的电力来控制元件的电加热以保持恒定电阻的系统和方法，其中所有参数是（1）任意选择的; （2）由受控元素的物理性质预先确定的; 或（3）实时测量。 与常规比例积分微分（PID）控制机制不同，本发明的系统和方法在与不同的受控元件结合使用时或在不同的操作条件下不需要重新调整比例常数，因此适应性 以控制元件和操作条件的变化。