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    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes
    1.
    发明申请
    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes 审中-公开
    用于确定腔室清洁过程端点的系统和方法

    公开(公告)号：US20080251104A1

    公开(公告)日：2008-10-16

    申请号：US12088825

    申请日：2006-10-03

    申请人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    发明人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    IPC分类号： B08B13/00

    CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

    摘要： Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

    摘要翻译： 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括将清洁流体与要清洁的结构接触并产生具有对应于结构的清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility
    2.
    发明申请
    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility 审中-公开
    用于在蚀刻等离子体处理设备中监测等离子体条件的方法和装置

    公开(公告)号：US20080134757A1

    公开(公告)日：2008-06-12

    申请号：US11908668

    申请日：2006-03-15

    申请人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    发明人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    IPC分类号： G01N25/36

    CPC分类号： B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

    摘要： A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

    摘要翻译： 一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型 等离子体。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

    Precursors for silicon dioxide gap fill
    9.
    发明授权
    Precursors for silicon dioxide gap fill 有权
    二氧化硅填充前体

    公开(公告)号：US09337054B2

    公开(公告)日：2016-05-10

    申请号：US12665929

    申请日：2008-06-27

    申请人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    发明人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    IPC分类号： H01L21/316 ,  H01L21/02

    CPC分类号： H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

    摘要： A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    摘要翻译： 描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。 还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。 前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。