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    Data bus system and method for performing cross-access between buses
    14.
    发明授权
    Data bus system and method for performing cross-access between buses 失效
    用于在总线之间执行交叉访问的数据总线系统和方法

    公开(公告)号：US07020733B2

    公开(公告)日：2006-03-28

    申请号：US10680192

    申请日：2003-10-08

    Applicant: Jae-Hun Kim ,  Woo-Hyuk Jang

    Inventor： Jae-Hun Kim ,  Woo-Hyuk Jang

    IPC: G06F13/36

    CPC classification number: G06F13/364

    Abstract: A data bus system, capable of distributing devices including first and second data buses capable of transmitting data among a plurality of devices; a register block that stores information on a first bus request signal and a first bus grant signal; a global arbiter that receives the first bus request signal from the register block to output a second bus request signal and receives a second bus grant signal from the register block to output the first bus grant signal. A bilateral bridge that acts as a data transmission path between the first data bus and the second data bus; and a local arbiter exists in each first and second data bus, and receives the second bus request signal from the global arbiter to output the second bus grant signal is disclosed.

    Abstract translation: 一种数据总线系统，能够分配包括能够在多个设备之间传输数据的第一和第二数据总线的设备; 存储关于第一总线请求信号和第一总线许可信号的信息的寄存器块; 接收来自寄存器块的第一总线请求信号以输出第二总线请求信号并从寄存器块接收第二总线许可信号以输出第一总线许可信号的全局仲裁器。 作为第一数据总线和第二数据总线之间的数据传输路径的双向桥; 并且每个第一和第二数据总线中存在本地仲裁器，并且从全局仲裁器接收第二总线请求信号以公布第二总线授权信号。

    All-optical XOR gate by using semiconductor optical amplifiers
    15.
    发明授权
    All-optical XOR gate by using semiconductor optical amplifiers 失效
    全光XOR门采用半导体光放大器

    公开(公告)号：US06930826B2

    公开(公告)日：2005-08-16

    申请号：US10175610

    申请日：2002-06-20

    Applicant: Jae Hun Kim ,  Young Tae Byun ,  Young Min Jhon ,  Seok Lee ,  Deok Ha Woo ,  Sun Ho Kim ,  Kwang Nam Kang

    Inventor： Jae Hun Kim ,  Young Tae Byun ,  Young Min Jhon ,  Seok Lee ,  Deok Ha Woo ,  Sun Ho Kim ,  Kwang Nam Kang

    IPC: G02F3/00 ,  H01S3/10 ,  H01S5/50 ,  H01S3/00

    CPC classification number: G02F3/00

    Abstract: The present invention relates to a method of embodying all-optical XOR logic gate by using semiconductor optical amplifier, and more particularly, to a technique to embody all-optical XOR logic gate utilizing the cross-gain modulation (XGM) characteristic of semiconductor optical amplifiers controllable with input currents, illumination signal, and pumping signal.The method of all-optical XOR logic element in accordance with the present invention is characterized to obtain operational characteristic of the all-optical XOR logic element by inputting pump-signal and illumination signal concurrently into two semiconductor optical amplifiers and then summing the two output signals having XGM characteristic arising from gain saturation and wavelength conversion of the semiconductor optical amplifiers.

    Abstract translation: 本发明涉及通过使用半导体光放大器来实现全光XOR逻辑门的方法，更具体地说，涉及利用半导体光放大器的交叉增益调制（XGM）特性来体现全光XOR逻辑门的技术 可用输入电流，照明信号和泵浦信号控制。 根据本发明的全光XOR逻辑元件的方法的特征在于通过将泵浦信号和照明信号同时输入到两个半导体光放大器中，然后将两个输出信号相加，从而获得全光XOR逻辑元件的工作特性 具有由半导体光放大器的增益饱和度和波长转换引起的XGM特性。

    MOS transistor having a recessed gate electrode and fabrication method thereof
    16.
    发明授权
    MOS transistor having a recessed gate electrode and fabrication method thereof 失效
    具有凹陷栅电极的MOS晶体管及其制造方法

    公开(公告)号：US06924529B2

    公开(公告)日：2005-08-02

    申请号：US10666507

    申请日：2003-09-19

    Applicant: Jae-Hun Kim ,  Kyu-Whan Chong

    Inventor： Jae-Hun Kim ,  Kyu-Whan Chong

    IPC: H01L21/336 ,  H01L29/78 ,  H01L29/76 ,  H01L31/113

    CPC classification number: H01L29/66492 ,  H01L29/66553 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/7834

    Abstract: A MOS transistor having a recessed gate electrode and a fabrication method thereof are provided. The MOS transistor includes an isolation layer formed at a predetermined region of a semiconductor substrate to define an active region and double trench regions formed in the active region. The double trench region is composed of an upper trench region crossing the active region and a lower trench region located under the upper trench region. Thus, the active region is divided into two sub-active regions. Sidewalls of the upper trench region are covered with a spacer, which is used as an etching mask to form the lower trench region in the semiconductor substrate of the upper trench region. The upper and lower trench regions are then filled with a gate electrode. Also, high concentration source/drain regions are formed at the top surfaces of the sub-active regions respectively. Therefore, an effective channel length of the MOS transistor is determined according to the dimension of the lower trench region.

    Abstract translation: 提供具有凹陷栅电极的MOS晶体管及其制造方法。 MOS晶体管包括形成在半导体衬底的预定区域处的隔离层，以限定形成在有源区中的有源区和双沟槽区。 双沟槽区域由与沟道区域相交的上沟槽区域和位于上沟槽区域下方的下沟槽区域构成。 因此，有源区域被分成两个子活性区域。 上沟槽区域的侧壁被间隔物覆盖，间隔件用作蚀刻掩模以在上沟槽区域的半导体衬底中形成下沟槽区域。 然后用栅电极填充上沟槽区域和下沟槽区域。 此外，高分子源极/漏极区分别形成在子有源区的顶表面。 因此，根据下沟槽区域的尺寸确定MOS晶体管的有效沟道长度。

    Integrated optical isolator
    17.
    发明申请
    Integrated optical isolator 审中-公开
    集成光隔离器

    公开(公告)号：US20050089258A1

    公开(公告)日：2005-04-28

    申请号：US10955778

    申请日：2004-09-30

    Applicant: Young-Il Kim ,  Gwan-Su Lee ,  Seok Lee ,  Deok-Ha Woo ,  Sun-Ho Kim ,  Jae-Hun Kim ,  Young-Tae Byun ,  Sung-Kyu Kim ,  Min-Chul Park ,  Seok-Ho Song

    Inventor： Young-Il Kim ,  Gwan-Su Lee ,  Seok Lee ,  Deok-Ha Woo ,  Sun-Ho Kim ,  Jae-Hun Kim ,  Young-Tae Byun ,  Sung-Kyu Kim ,  Min-Chul Park ,  Seok-Ho Song

    IPC: G02B6/12 ,  G02B6/26 ,  G02B27/28 ,  G02F1/095 ,  G02F1/21 ,  H01P1/36 ,  G02F1/295 ,  G02B6/42

    CPC classification number: G02F1/0955 ,  G02B6/2746 ,  G02B2006/12157 ,  G02F2001/212 ,  G02F2202/32

    Abstract: A semiconductor magneto-optical integrated optical isolator is realized with a Mach-Zehnder integrated optical isolator in which a cladding and a guiding layer of light waveguide are composed of magnetic material. Here, it uses nonreciprocal phase shift created when light propagation direction is changed. The fundamental element deriving this nonreciprocal phase shift is the Faraday rotation of magnetic material. Therefore, it is essential to have large Faraday rotation in order to fabricate a short length integrated optical isolator. However, since magnetic material of bulk state does not have large Faraday rotation, there need the length of several mm units for fabricating an isolator. The invention is to realize an integrated optical isolator using magneto-optical crystal in which magneto-optical material and dielectric substance have periodic structure. By the above reasons, magneto-optical crystal becomes to have bigger Faraday rotation than that of bulk state magnetic materials; thereby nonreciprocal phase shift becomes large and a short length integrated optical isolator can be fabricated. Thus, in order to reduce the device length of a Mach-Zehnder optical isolator, magneto-optical crystal having large Faraday rotation is used.

    Abstract translation: 用Mach-Zehnder集成光隔离器实现半导体磁光集成光隔离器，其中包层和光波导的引导层由磁性材料组成。 这里，当光传播方向改变时，使用不可逆相移。 导出这种非相互相移的基本因素是磁性材料的法拉第旋转。 因此，为了制造短长度的集成光隔离器，必须具有大的法拉第旋转。 然而，由于体状态的磁性材料不具有大的法拉第旋转，所以需要用于制造隔离器的几mm单位的长度。 本发明是实现使用磁光晶体的集成光隔离器，其中磁光材料和电介质具有周期性的结构。 由于上述原因，磁光晶体变得具有比体状磁性材料更大的法拉第旋转; 从而非相互相移变大，并且可以制造短长度的集成光隔离器。 因此，为了减小Mach-Zehnder光隔离器的器件长度，使用具有大法拉第旋转的磁光晶体。

    Rebound stopper of strut assembly for suspension in vehicle
    20.
    发明授权
    Rebound stopper of strut assembly for suspension in vehicle 有权
    用于悬架在车辆中的支柱组件的回弹止动器

    公开(公告)号：US08678361B2

    公开(公告)日：2014-03-25

    申请号：US13302784

    申请日：2011-11-22

    Applicant: Jae Hun Kim ,  Se Il Kim

    Inventor： Jae Hun Kim ,  Se Il Kim

    IPC: F16F7/104 ,  F16F13/22 ,  F16F15/08

    CPC classification number: B60G15/068 ,  B60G2204/128 ,  B60G2204/4502 ,  F16F9/54

    Abstract: A rebound stopper of a strut assembly for a suspension in a vehicle, may include a steel plate combined with a strut and being fitted over an upper end of the strut which has passed into a car body, a rubber plate fitted around an outer circumferential edge of the steel plate, and a mass damper combined with the rubber plate and functioning as a damper by resiliently moving relative to the rubber plate during a rebounding motion of the strut assembly.

    Abstract translation: 用于车辆悬架的支柱组件的回弹止动器可以包括与支柱组合的钢板，并且装配在已经进入车身的支柱的上端上，橡胶板安装在外周边缘 以及与橡胶板组合的质量阻尼器，并且在支柱组件的回弹运动期间通过相对于橡胶板弹性移动而用作阻尼器。

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