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    Touch sensitive display employing an SOI substrate and integrated sensing circuitry
    11.
    发明申请
    Touch sensitive display employing an SOI substrate and integrated sensing circuitry 审中-公开
    使用SOI衬底和集成感测电路的触敏显示器

    公开(公告)号：US20090195511A1

    公开(公告)日：2009-08-06

    申请号：US12012564

    申请日：2008-02-04

    申请人： Jeffrey Scott Cites ,  David Francis Dawson-Elli ,  Eric John Mozdy ,  Carlo Anthony Kosik Williams

    发明人： Jeffrey Scott Cites ,  David Francis Dawson-Elli ,  Eric John Mozdy ,  Carlo Anthony Kosik Williams

    IPC分类号： G06F3/041

    CPC分类号： G06F3/0412 ,  G06F3/044

    摘要： Methods and apparatus for producing a touch sensitive LCD employing a semiconductor on glass (SiOG) structure provide for: a glass or glass-ceramic substrate; a single crystal semiconductor layer bonded to the glass or glass-ceramic substrate; display circuitry including a plurality of thin-film transistors disposed on the single crystal semiconductor layer and forming a matrix of display pixels; display control circuitry operable to drive the display circuitry to produce viewable images; and sensing circuitry operable to detect electrical characteristic changes in one or more of the single crystal semiconductor layer and the display circuitry, the electrical characteristic changes resulting from user touch events.

    摘要翻译： 使用玻璃上的半导体（SiOG）结构的触敏LCD的制造方法和装置提供：玻璃或玻璃陶瓷基片; 结合到玻璃或玻璃陶瓷基板的单晶半导体层; 显示电路，包括设置在单晶半导体层上并形成显示像素矩阵的多个薄膜晶体管; 显示控制电路，其可操作以驱动所述显示电路以产生可视图像; 以及可操作以检测单晶半导体层和显示电路中的一个或多个中的电特性变化的感测电路，由用户触摸事件导致的电特性变化。

    METHODS FOR PRODUCING ION EXCHANGED GLASS AND RESULTING APPARATUS
    13.
    发明申请
    METHODS FOR PRODUCING ION EXCHANGED GLASS AND RESULTING APPARATUS 审中-公开
    用于生产离子交换玻璃和结果设备的方法

    公开(公告)号：US20140087193A1

    公开(公告)日：2014-03-27

    申请号：US13626958

    申请日：2012-09-26

    申请人： Jeffrey Scott Cites ,  Thomas Michael Cleary ,  James Gregory Couillard ,  Michael John Moore

    发明人： Jeffrey Scott Cites ,  Thomas Michael Cleary ,  James Gregory Couillard ,  Michael John Moore

    IPC分类号： C03C21/00 ,  B32B17/00

    CPC分类号： B32B17/10119 ,  B32B17/10036 ,  B32B17/10137 ,  B32B17/10761 ,  C03C21/002 ,  Y10T428/315

    摘要： Methods and apparatus provide for performing an ion exchange process by immersing a glass sheet into a molten salt bath at one or more first temperatures for a first period of time such that ions within the glass sheet proximate to a surface thereof are exchanged for larger ions from the molten salt bath, thereby producing: (i) an initial compressive stress (iCS) at the surface of the glass sheet, (ii) an initial depth of compressive layer (iDOL) into the glass sheet, and (iii) an initial central tension (iCT) within the glass sheet; and annealing the glass sheet, after the ion exchange process has been completed, by elevating the glass sheet to one or more second temperatures for a second period of time such that at least one of the initial compressive stress (iCS), the initial depth of compressive layer (iDOL), and the initial central tension (iCT) are modified.

    摘要翻译： 方法和装置提供了通过在一个或多个第一温度下将玻璃板浸入熔融盐浴中进行离子交换过程第一时间段，使得靠近其表面的玻璃板内的离子被更换为较大的离子 熔融盐浴，从而产生：（i）在玻璃板表面的初始压缩应力（iCS），（ii）玻璃板中的初始压缩层深度（iDOL），和（iii）初始中心 玻璃板内的张力（iCT）; 以及退火所述玻璃板，在所述离子交换过程完成之后，通过将所述玻璃板升高至一个或多个第二温度第二时间段，使得所述初始压缩应力（iCS），所述初始压缩应力 压缩层（iDOL）和初始中心张力（iCT）。

    Process of making semiconductor on glass substrates with a stiffening layer
    17.
    发明授权
    Process of making semiconductor on glass substrates with a stiffening layer 有权
    在具有加强层的玻璃基板上制造半导体的工艺

    公开(公告)号：US08518799B2

    公开(公告)日：2013-08-27

    申请号：US13714792

    申请日：2012-12-14

    申请人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    发明人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    IPC分类号： H01L21/30

    CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

    摘要： A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

    摘要翻译： 在离子注入薄膜转移工艺中，通过将硬化层或层沉积在硅膜和玻璃之间在半导体玻璃基板上具有相对刚性（例如相对较高的杨氏模量为125或更高）的硬化层 一个施主晶片或玻璃基板，以消除在薄膜转移过程中在转移的硅膜的表面中形成的峡谷和针孔。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

    SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME
    19.
    发明申请
    SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME 有权
    具有强化层的玻璃基板上的半导体及其制造方法

    公开(公告)号：US20120001293A1

    公开(公告)日：2012-01-05

    申请号：US12827582

    申请日：2010-06-30

    申请人： Nadia Ben Mohamed ,  Ta Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    发明人： Nadia Ben Mohamed ,  Ta Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    IPC分类号： H01L29/02 ,  H01L21/762

    CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

    摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

    摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。