公开(公告)号：US06291138B1

公开(公告)日：2001-09-18

申请号：US09360121

申请日：1999-07-23

申请人： Xuehua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

发明人： Xuehua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

IPC分类号： G03C500

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

摘要： A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.

摘要翻译： 一种形成镀层的方法。 首先提供基板。 然后在衬底上形成掩蔽框架，用于掩蔽在屏蔽框架内对屏蔽框架镀层进行屏蔽电镀，其中制造掩模框架以提供与衬底间隔开的掩蔽框架的上部的突出部分， 到掩蔽框架的较靠近衬底间隔的部分。 最后，然后将屏蔽框架镀层电镀在屏蔽框架内。 该方法对于在磁换能器元件内形成具有增强的平面度尺寸控制的掩模框架电镀磁极尖端堆叠层是有用的。

公开(公告)号：US06291087B1

公开(公告)日：2001-09-18

申请号：US09336786

申请日：1999-06-21

申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Kochan Ju ,  Cheng Horng ,  Jei-Wei Chang

发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Kochan Ju ,  Cheng Horng ,  Jei-Wei Chang

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3954 ,  G11B5/66 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T428/1121

摘要： A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method. The method is particularly useful for forming a dual stripe magnetoresistive (DSMR) sensor element by employing a single magnetic exchange bias material with separate blocking temperatures.

摘要翻译： 一种用于形成磁阻（MR）传感器元件的方法和根据该方法制造的磁阻传感器元件。 首先提供基板。 然后在衬底上形成磁阻（MR）层，包括：（1）由第一磁阻（MR）材料形成的磁阻（MR）层的体层，其被优化以提供增强的磁阻（MR）电阻率敏感性 磁阻（MR）层; 和（2）由第二磁阻（MR）材料形成的磁阻（MR）层的表面层，其优化以在磁阻（MR）层的表面层上形成磁交换偏置层时提供增强的磁交换偏压。 最后，在磁阻（MR）层的表面层上形成磁交换偏置层。 该方法考虑了根据该方法制造的磁阻（MR）传感器元件。 该方法对于通过采用具有单独的阻挡温度的单个磁交换偏压材料形成双重磁阻（DSMR）传感器元件特别有用。

公开(公告)号：US06228276B1

公开(公告)日：2001-05-08

申请号：US09244882

申请日：1999-02-05

申请人： Kochan Ju ,  Jei-Wei Chang ,  Cheng T. Horng

发明人： Kochan Ju ,  Jei-Wei Chang ,  Cheng T. Horng

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996

摘要： A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Within the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.

摘要翻译： 一种用于形成磁阻（MR）传感器元件的方法。 首先提供基板。 然后在衬底上形成种子层。 然后形成一对图案化的导体引线层结构使种子层的一对相对端接触。 然后蚀刻，同时采用离子蚀刻方法，种子层和一对图案化的导体引线层结构，以形成离子蚀刻种子层和一对离子蚀刻图案化导体引线层结构。 最后，然后形成在离子蚀刻种子层上，并且一对离子蚀刻图案化的导体引线层构成磁阻（MR）层状结构。 在磁阻（MR）传感器元件内，一对图案化的导体引线层结构可以形成在离子蚀刻凹陷的介电隔离层内的一对凹槽内。

公开(公告)号：US07781152B2

公开(公告)日：2010-08-24

申请号：US10900942

申请日：2004-07-28

申请人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

发明人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

IPC分类号： G03F7/00

CPC分类号： G03F7/094 ,  G03F7/203 ,  G03F7/36 ,  G03F7/405

摘要： A method for forming a bi-layer lift-off mask, including a hardened photoresistive stencil layer on a PMGI layer, for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns and TMJ MRAM devices of similar critical dimensions. The stencil portion of the mask includes a narrow portion with sharply defined edge and corners which are formed, without rounding or extreme undercut, by a photolithographic process which includes the formation, in a first development process, of auxiliary pattern pieces over the corners of the stencil and a subsequent oxidation in ozone for removing those auxiliary pattern pieces and obtaining sharply defined edge and corners and a controlled dissolution of the PMGI layer.

摘要翻译： 一种用于形成双层剥离掩模的方法，包括在PMGI层上的硬化的光致抗蚀剂蜡纸层，用于制造具有小于0.1微米的轨道宽度的GMR读取头传感器和具有相似关键尺寸的TMJ MRAM装置。 掩模的模版部分包括具有明显限定的边缘的窄部分和通过光刻工艺形成的没有圆形或极端底切的拐角，其包括在第一显影过程中形成辅助图案片 蜡纸和随后的臭氧中的氧化，以去除这些辅助图案片并获得锐利定义的边缘和角部以及受控的PMGI层的溶解。

公开(公告)号：US20070041124A1

公开(公告)日：2007-02-22

申请号：US11588564

申请日：2006-10-27

申请人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

发明人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

IPC分类号： G11B5/09

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.

摘要翻译： 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过 其中心区域，从而最小化其边缘读取灵敏度。

公开(公告)号：US07118680B2

公开(公告)日：2006-10-10

申请号：US10718372

申请日：2003-11-20

申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

IPC分类号： G11B5/39

CPC分类号： G11B5/1278 ,  Y10T29/49052

摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

公开(公告)号：US07111386B2

公开(公告)日：2006-09-26

申请号：US11266418

申请日：2005-11-03

申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

公开(公告)号：US07012789B2

公开(公告)日：2006-03-14

申请号：US10131675

申请日：2002-04-24

申请人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei Wei Chang

发明人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei Wei Chang

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

摘要翻译： 合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。 在共享极的第一高磁矩极点上形成写间隙层。 上极包括写间隙层上的高磁矩极点层。

公开(公告)号：US20060048375A1

公开(公告)日：2006-03-09

申请号：US11266418

申请日：2005-11-03

申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

IPC分类号： G11B5/127 ,  H04R31/00 ,  C25D5/02

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

公开(公告)号：US20060024618A1

公开(公告)日：2006-02-02

申请号：US10900942

申请日：2004-07-28

申请人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

发明人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

IPC分类号： G03F7/00

CPC分类号： G03F7/094 ,  G03F7/203 ,  G03F7/36 ,  G03F7/405

摘要： A method for forming a bi-layer lift-off mask, including a hardened photoresistive stencil layer on a PMGI layer, for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns and TMJ MRAM devices of similar critical dimensions. The stencil portion of the mask includes a narrow portion with sharply defined edge and corners which are formed, without rounding or extreme undercut, by a photolithographic process which includes the formation, in a first development process, of auxiliary pattern pieces over the corners of the stencil and a subsequent oxidation in ozone for removing those auxiliary pattern pieces and obtaining sharply defined edge and corners and a controlled dissolution of the PMGI layer.

摘要翻译： 一种用于形成双层剥离掩模的方法，包括在PMGI层上的硬化的光致抗蚀剂蜡纸层，用于制造具有小于0.1微米的轨道宽度的GMR读取头传感器和具有相似关键尺寸的TMJ MRAM装置。 掩模的模版部分包括具有明显限定的边缘的窄部分和通过光刻工艺形成的没有圆形或极端底切的拐角，其包括在第一显影过程中形成辅助图案片 蜡纸和随后的臭氧中的氧化，以去除这些辅助图案片并获得锐利定义的边缘和角部以及受控的PMGI层的溶解。