OXIDE THIN FILM TRANSISTORS AND METHODS OF MANUFACTURING THE SAME
    14.
    发明申请
    OXIDE THIN FILM TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 有权
    氧化物薄膜晶体管及其制造方法

    公开(公告)号:US20110169006A1

    公开(公告)日:2011-07-14

    申请号:US13004981

    申请日:2011-01-12

    CPC分类号: H01L29/7869 B82Y10/00

    摘要: Example embodiments are directed to oxide thin film transistors and methods of manufacturing the oxide thin film transistors. The oxide thin film transistor includes an active region in a gate insulation layer and under a source and a drain in a bottom gate structure, thus improving electrical characteristics of the oxide thin film transistor.

    摘要翻译: 示例性实施例涉及氧化物薄膜晶体管和制造氧化物薄膜晶体管的方法。 氧化物薄膜晶体管包括栅极绝缘层中的有源区和底栅结构中的源极和漏极,从而改善氧化物薄膜晶体管的电特性。