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公开(公告)号：US20150270067A1
公开(公告)日：2015-09-24
申请号：US14441888
申请日：2013-11-07
发明人： Hidehiko Iinuma , Yoshimi Moriya
IPC分类号： H01G4/12 , C04B35/468
CPC分类号： H01G4/1227 , C01G23/006 , C01P2002/77 , C01P2004/04 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C01P2006/12 , C04B35/4682 , C04B35/62805 , C04B35/6281 , C04B35/62818 , C04B35/62886 , C04B35/62894 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3262 , C04B2235/442 , C04B2235/443 , C04B2235/5409 , C04B2235/5445 , C04B2235/5454 , C04B2235/79 , C04B2235/80
摘要： Provided is a surface-coated barium titanate particulate for us in multilayer ceramic capacitors and for which the grain growth during high-temperature firing has been suppressed. Also provided is a production method for same. Barium titanate particulate obtained by means of a hydrothermal reaction, wherein the coated barium titanate particulate has an average particle diameter of at least 10 nm but less than 1000 nm, a Ba/Ti ratio of 0.80-1.20 inclusive, a c/a ratio of 1.001-1.010 inclusive, and a coating layer comprising at least one kind of metal compound selected from the group consisting of Mg, Ca, Ba, Mn and rare earth elements is included on the surface thereof. The coated barium titanate particulate according to the present invention is produced by means of a method including: (1) a step for obtaining barium titanate particulate by mixing an aqueous solution containing barium hydroxide and an aqueous solution containing titanium hydroxide at a Ba/Ti ratio of 0.80-1.20 inclusive, and subjecting same to a hydrothermal reaction at a temperature of 200-450° C. inclusive, a pressure of 2.0-50 MPa inclusive, and for a reaction time of 0.1 minutes-1 hour inclusive; (2) a step for uniformly dispersing the barium titanate particulate in an aqueous solution; and (3) a step for coating the metal compound on the surface of the barium titanate particulate.
摘要翻译： 本发明提供了一种用于多层陶瓷电容器的表面涂覆的钛酸钡颗粒，并且其中高温烧制期间的晶粒生长被抑制。 还提供了相同的制造方法。 通过水热反应获得的钛酸钡颗粒，其中涂覆的钛酸钡颗粒的平均粒径为至少10nm但小于1000nm，Ba / Ti比为0.80-1.20（含），ac / a比为1.001 -1.010，包含由Mg，Ca，Ba，Mn和稀土元素组成的组中的至少一种金属化合物的涂层包含在其表面。 根据本发明的涂覆的钛酸钡颗粒通过以下方法制备：（1）通过将含有氢氧化钡的水溶液和含有氢氧化钛的水溶液以Ba / Ti比混合来获得钛酸钡颗粒的步骤 为0.80-1.20，并在200-450℃的温度下进行水热反应，其压力为2.0-50MPa，反应时间为0.1分-1小时。 （2）将钛酸钡颗粒均匀分散在水溶液中的步骤; 和（3）在钛酸钡颗粒的表面上涂覆金属化合物的步骤。
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12.发明公开公开(公告)号：US20240182410A1
公开(公告)日：2024-06-06
申请号：US18551230
申请日：2022-03-18
IPC分类号： C07C323/58 , C07C319/20 , C07D417/04
CPC分类号： C07C323/58 , C07C319/20 , C07D417/04
摘要： To establish an unprecedented novel method for producing D-luciferin and a D-luciferin derivative without using expensive 2-cyano-6-hydroxybenzothiazole that is obtained by a multi-stage production process. In the method for producing D-luciferin and a D-luciferin derivative, the above object is achieved via a novel substituted diaminodithioether represented by the following formula (1):
wherein X is H, OCH3 or OH; and Y, Z and W are H or monovalent organic groups, which serves as a precursor.-
公开(公告)号：US11814726B2
公开(公告)日：2023-11-14
申请号：US18145343
申请日：2022-12-22
发明人： Yoshinao Takahashi , Katsuya Fukae , Korehito Kato
CPC分类号： C23C16/4405 , B08B5/00 , B08B7/0071 , B08B7/04 , C23C16/24
摘要： Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.-
公开(公告)号：US11795396B2
公开(公告)日：2023-10-24
申请号：US17577511
申请日：2022-01-18
发明人： Hisashi Shimizu , Korehito Kato
IPC分类号： H01L21/3065 , C09K13/00
CPC分类号： C09K13/00 , H01L21/3065
摘要： Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2≤x≤5, y≤2x, and 1≤z≤2.
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公开(公告)号：US11667811B2
公开(公告)日：2023-06-06
申请号：US17637949
申请日：2020-09-01
IPC分类号： C09D175/04 , C09D7/20
CPC分类号： C09D175/04 , C09D7/20
摘要： The present invention is a coating composition containing (A) a fluorine-containing copolymer and (B) a polycarbonate diol.
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公开(公告)号：US20210388264A1
公开(公告)日：2021-12-16
申请号：US17288274
申请日：2019-10-25
发明人： Hisashi SHIMIZU , Korehito KATO
IPC分类号： C09K13/00 , H01L21/3065 , H01L21/311 , H01J37/32
摘要： Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC).
A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2≤x≤5, y≤2x, and 1≤z≤2.-
公开(公告)号：US20210285100A1
公开(公告)日：2021-09-16
申请号：US16323383
申请日：2017-08-29
摘要： A method for effectively removing fluorine atoms remaining in a semiconductor fabrication chamber after cleaning the chamber with chlorine trifluoride is provided. The method includes exposing the inside of the chamber after semiconductor fabrication to chlorine trifluoride to remove an object to be removed remaining in the chamber and then thermally treating the inside of the chamber with at least one gas selected from the group consisting of nitrogen, argon, helium, and hydrogen. It is preferred that the exposure to chlorine trifluoride is carried out while monitoring the chamber inside temperature and that the chlorine trifluoride feed is ceased when the inside temperature decreases to a predetermined temperature.
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公开(公告)号：US20210193475A1
公开(公告)日：2021-06-24
申请号：US17197544
申请日：2021-03-10
IPC分类号： H01L21/3065 , H01L21/3213
摘要： In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
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公开(公告)号：US20210155498A1
公开(公告)日：2021-05-27
申请号：US17044214
申请日：2019-03-29
摘要： Provided are a method of producing high-purity molybdenum hexafluoride in good yield and a reaction apparatus therefor.
The method of producing molybdenum hexafluoride, in a production apparatus for molybdenum hexafluoride including a fixed bed that is for mounting metallic molybdenum and that extends inside a reactor from an upstream side to a downstream side of the reactor, a fluorine (F2) gas inlet provided on the upstream side of the reactor, and a reaction product gas outlet provided on the downstream side of the reactor, comprises bringing metallic molybdenum into contact with fluorine (F2) gas, where the fixed bed for mounting metallic molybdenum is tilted.-
公开(公告)号：US20210047265A1
公开(公告)日：2021-02-18
申请号：US17044191
申请日：2019-03-29
发明人： Wataru KASHIKURA , Yoshihiko IKETANI , Yuki SATO
IPC分类号： C07C319/20 , B01J27/12 , B01J27/132
摘要： The present invention aims to provide a method by which fluorine-containing sulfide compounds, particularly sulfide compounds that contain hydrogen and fluorine, can be produced in a simple, low-cost and industrial manner. Provided is a method of producing a fluorine-containing sulfide compound represented by the following formula (2): (F)n-A3-S-A4-(F)m (2) (wherein A3 and A4 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of fluorine atoms binding to A3 and A4, with n+m=1 to 13 being satisfied), comprising reacting a chlorine-containing sulfide compound represented by the following formula (1): (Cl)n-A1-S-A2-(Cl)m (1) (wherein A1 and A2 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of chlorine atoms binding to A1 and A2, with n+m=1 to 13 being satisfied) and a fluorinating agent.
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