Abstract:
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, and an eddy current monitoring system to generate an eddy current signal. The eddy current monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a first prong extending from the back portion in a first direction normal to the surface of the platen and having a width in a second direction parallel to the surface of the platen, and second and third prongs extending from the back portion in parallel with the first protrusion, the second and third prongs positioned on opposite sides of and equidistant from the first prong. A spacing between each of the second and third prongs and the first prong is approximately equal to twice the width of the first prong.
Abstract:
A method of chemical mechanical polishing a metal layer on a substrate includes polishing the metal layer on the substrate at first and second polishing stations, monitoring thickness of the metal layer during polishing at the first and second polishing station with first and second eddy current monitoring systems having different resonant frequencies, and controlling pressures applied by a carrier head to the substrate during polishing at the first and second polishing stations to improve uniformity based on thickness measurements from the first and second eddy current monitoring systems.
Abstract:
Techniques have been developed to facilitate concurrent evaluation of hash rule entries in ways that allow an implementation to maintain a deterministic resultant hash irrespective of variations in the allocation of particular rules to particular storage banks or evaluation logic, such as may occur with rule set revisions. Similarly, uniform deterministic hash results can be assured even across a range of implementations that support greater or lesser levels of concurrent rule evaluations.
Abstract:
A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.
Abstract:
A method and system for providing dynamic branding for a computer program or suite having windows, screens, display elements in a graphical interface. The system comprises a branding service module and a branding files database. The database includes a schema for storing and accessing the branding files. The branding files comprise graphical elements and/or textual elements, which can be modified and updated.
Abstract:
A pad conditioner is provided for conditioning a polishing pad in chemical mechanical planarization (CMP). The pad conditioner comprises a plastic abrasive portion having a first hardness and optionally a brush portion having a second hardness less than the first hardness. The plastic abrasive portion comprises a base plate and a plurality of plastic nodules formed on a surface of the base plate, each of the plastic nodules having a planar top surface, wherein the planar top surface is positioned to substantially contact a polishing pad. The brush portion may be positioned adjacent to the plastic abrasive portion, the brush portion having a plurality of brush elements positioned to substantially contact the pad.
Abstract:
A data processing system includes a processor core and a hardware module. The processor core performs tasks on data packets. The ordering scope manager stores a first value in a first storage location. The first value indicates that exclusive execution of a first task in a first ordering scope is enabled. In response to a relinquish indicator being received, the ordering scope manager stores a second value in the first storage location. The second value indicates that the exclusively execution of the first task in the first ordering scope is disabled.
Abstract:
A multi-core system configured to execute a plurality of tasks and having a semaphore engine and a direct memory access (DMA) engine capable of selecting, by a task scheduler of a first core, a first task for execution by the first core. In response to a semaphore lock request, the task scheduler of the first core switches the first task to an inactive state and selects a next task for execution by the first core. After the semaphore engine acquires the semaphore lock of the first semaphore, a data transfer request is provided to the DMA engine. In response to the data transfer request, the DMA engine transfers data associated with the locked first semaphore to the entry of the workspace of the first core.
Abstract:
A data processing system includes a processor core and a hardware module. The processor core performs tasks on data packets. The ordering scope manager stores a first value in a first storage location. The first value indicates that exclusive execution of a first task in a first ordering scope is enabled. In response to a relinquish indicator being received, the ordering scope manager stores a second value in the first storage location. The second value indicates that the exclusively execution of the first task in the first ordering scope is disabled.