公开(公告)号：US5878760A

公开(公告)日：1999-03-09

申请号：US862083

申请日：1997-05-22

Applicant: Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

Inventor： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC: B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5849104A

公开(公告)日：1998-12-15

申请号：US710701

申请日：1996-09-19

Applicant: Raj Mohindra ,  David C. Wong ,  Suraj Puri

Inventor： Raj Mohindra ,  David C. Wong ,  Suraj Puri

IPC: B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B13/00

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/67207 ,  H01L21/02049 ,  Y10S134/902

Abstract: A cleaning system (1, 5) having multiple cleaning chambers (200) is provided. Each cleaning chamber (200) includes an interior region sufficient for immersing a carrier (242), which has at least one wafer disposed therein, into an ultra-clean liquid. The cleaning chamber (200) also has an inlet operably coupled to the interior region to introduce a gas into the interior region and a drain operably coupled to the interior region to remove the ultra-clean liquid from the interior region at a selected rate. A controller 14 is operably coupled to the chamber (200) for selectively controlling the selected rate. In an alternative embodiment, an installation technique (80) for the above cleaning system (1, 5) is provided.

Abstract translation: 提供具有多个清洁室（200）的清洁系统（1,5）。 每个清洁室（200）包括足够的内部区域，用于将其中设置有至少一个晶片的载体（242）浸入超清洁液体中。 清洁室（200）还具有可操作地连接到内部区域以将气体引入内部区域的入口和可操作地联接到内部区域的排水口，以选择的速率从内部区域移除超清洁液体。 控制器14可操作地耦合到腔室（200），以选择性地控制所选择的速率。 在替代实施例中，提供了用于上述清洁系统（5,5）的安装技术（80）。

公开(公告)号：US06312597B1

公开(公告)日：2001-11-06

申请号：US08568595

申请日：1995-12-01

Applicant: Raj Mohindra ,  Abhay K. Bhushan ,  Rajiv Bhushan ,  Suraj Puri

Inventor： Raj Mohindra ,  Abhay K. Bhushan ,  Rajiv Bhushan ,  Suraj Puri

IPC: B08B310

CPC classification number: H01L21/02052 ,  H01L21/67028 ,  Y10S134/902 ,  Y10S210/90

Abstract: The invention relates to a wafer rinsing system for rinsing chemicals and particles off of wafers without introducing contaminants. The system reduces the particle count on wafers by filtering the water and the gas used during rinsing at the wet bench. The system includes a rinsing unit, a local water filter bank, a local gas filtering system, an H2O2 injection unit, an auxiliary chemical injection unit, and a controller for operating the other components. The water filter bank provides a multiple stage filtering system to eliminate particles without a substantial drop in water pressure. The H2O2 injection unit provides a local source of H2O2 to clean the filter and rinser and to provide a mechanism for controlling the formation of native oxide on the wafer during rinsing. The auxiliary chemical injection unit provides a chemical additive to the rinsing unit to enhance the wafer cleaning process. The gas filtering system provides clean gas to the rinsing unit and to the injection units. The clean gas provides a clean atmosphere over the chemicals in each injection unit, and over the water in the rinser.

Abstract translation: 本发明涉及一种用于在不引入污染物的情况下漂洗化学品和离开晶片的颗粒的晶片冲洗系统。 该系统通过过滤在湿式工作台漂洗期间使用的水和气体来减少晶片上的颗粒数。 该系统包括冲洗单元，局部水过滤器组，局部气体过滤系统，H 2 O 2注入单元，辅助化学品注入单元和用于操作其它组件的控制器。 水过滤器组提供了一个多级过滤系统，以消除颗粒物而不会明显下降水压。 H 2 O 2注入单元提供H 2 O 2的局部源以清洁过滤器和冲洗器，并提供用于在冲洗期间控制晶片上的天然氧化物形成的机制。 辅助化学品注入单元为冲洗单元提供化学添加剂以增强晶片清洗过程。 气体过滤系统为冲洗单元和注射单元提供清洁的气体。 清洁气体在每个注射单元中的化学品和冲洗器中的水中提供清洁的气氛。

公开(公告)号：US5932027A

公开(公告)日：1999-08-03

申请号：US5976

申请日：1998-01-12

Applicant: Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

Inventor： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC: B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  B08B5/00

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

Abstract: A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid having water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas having a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract translation: 一种用于清洁半导体晶片的方法。 该方法包括将晶片浸入具有水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤中引入具有清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，以加速从晶片脱离的附着液体的流体流动。

公开(公告)号：US5873947A

公开(公告)日：1999-02-23

申请号：US907322

申请日：1997-08-06

Applicant: Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

Inventor： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC: B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

Abstract: A technique for cleaning a hard disk using a novel support device 502. The technique includes immersing a disk in a liquid comprising water. The disk has a front face, a back face, an edge, and a center region. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the disk.

Abstract translation: 使用新颖的支持装置502清洁硬盘的技术。该技术包括将盘浸入包含水的液体中。 盘具有正面，背面，边缘和中心区域。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤中引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，使得附着液体中的清洁增强物质的浓度梯度加速，从而加速了附着液体流出盘的流体流动。

公开(公告)号：US5685327A

公开(公告)日：1997-11-11

申请号：US695285

申请日：1996-08-08

Applicant: Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson ,  Jeffrey Nowell

Inventor： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson ,  Jeffrey Nowell

IPC: B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

Abstract: Apparatus for cleaning and drying a semiconductor wafer. The apparatus includes a vessel adapted to immerse a partially completed semiconductor wafer in a liquid comprising water. The apparatus also includes a control valve operably coupled to the vessel through a drain, and adapted to allow a gaseous mixture to displace the liquid in the vessel, where the liquid is displaced adjacent to the front face of the partially completed wafer. A controller is included. The controller is operably coupled to a plurality of nozzles. The controller can be used to pulse a drying fluid from the plurality of nozzles to the partially completed wafer to remove a possibility of liquid which may be attached to the partially completed wafer.

Abstract translation: 用于清洁和干燥半导体晶片的装置。 该装置包括适于将部分完成的半导体晶片浸入包含水的液体中的容器。 该装置还包括控制阀，该控制阀通过排水口可操作地连接到容器，并且适于允许气体混合物移动容器中的液体，其中液体邻近部分完成的晶片的前表面移动。 包括控制器。 控制器可操作地耦合到多个喷嘴。 控制器可以用于将干​​燥流体从多个喷嘴脉冲到部分完成的晶片，以消除可能附着到部分完成的晶片的液体的可能性。

公开(公告)号：US5651379A

公开(公告)日：1997-07-29

申请号：US566302

申请日：1995-12-01

Applicant: Raj Mohindra ,  Abhay K. Bhushan ,  Rajiv Bhushan ,  Suraj Puri

Inventor： Raj Mohindra ,  Abhay K. Bhushan ,  Rajiv Bhushan ,  Suraj Puri

IPC: B08B3/10 ,  B01D35/02 ,  B01D35/06 ,  B03C5/00 ,  B03C5/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  H01L21/67028 ,  Y10S134/902 ,  Y10S210/90

Abstract: The invention relates to a wafer rinsing system for rinsing chemicals and particles off of wafers without introducing contaminants. The system reduces the particle count on wafers by filtering the water and the gas used during rinsing at the wet bench. The system includes a rinsing unit, a local water filter bank, a local gas filtering system, an H.sub.2 O.sub.2 injection unit, an auxiliary chemical injection unit, and a controller for operating the other components. The water filter bank provides a multiple stage filtering system to eliminate particles without a substantial drop in water pressure. The H.sub.2 O.sub.2 injection unit provides a local source of H.sub.2 O.sub.2 to clean the filter and rinser and to provide a mechanism for controlling the formation of native oxide on the wafer during rinsing. The auxiliary chemical injection unit provides a chemical additive to the rinsing unit to enhance the wafer cleaning process. The gas filtering system provides clean gas to the rinsing unit and to the injection units. The clean gas provides a clean atmosphere over the chemicals in each injection unit, and over the water in the rinser.

Abstract translation: 本发明涉及一种用于在不引入污染物的情况下漂洗化学品和离开晶片的颗粒的晶片冲洗系统。 该系统通过过滤在湿式工作台漂洗期间使用的水和气体来减少晶片上的颗粒数。 该系统包括冲洗单元，局部水过滤器组，局部气体过滤系统，H 2 O 2注入单元，辅助化学品注入单元和用于操作其它组件的控制器。 水过滤器组提供了一个多级过滤系统，以消除颗粒物而不会明显下降水压。 H 2 O 2注入单元提供H 2 O 2的局部源以清洁过滤器和冲洗器，并提供用于在冲洗期间控制晶片上的天然氧化物形成的机制。 辅助化学品注入单元为冲洗单元提供化学添加剂以增强晶片清洗过程。 气体过滤系统为冲洗单元和注射单元提供清洁的气体。 清洁气体在每个注射单元中的化学品和冲洗器中的水中提供清洁的气氛。

公开(公告)号：US06491043B2

公开(公告)日：2002-12-10

申请号：US10014113

申请日：2001-12-11

Applicant: Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

Inventor： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC: B08B304

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/02049 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  Y10S134/902

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5868150A

公开(公告)日：1999-02-09

申请号：US862082

申请日：1997-05-22

Applicant: Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

Inventor： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC: B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5772784A

公开(公告)日：1998-06-30

申请号：US555634

申请日：1995-11-08

Applicant: Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

Inventor： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC: B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  B08B5/00

CPC classification number: H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.