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    Ultra-low particle semiconductor cleaner
    2.
    发明授权
    Ultra-low particle semiconductor cleaner 失效
    超低颗粒半导体清洁剂

    公开(公告)号：US06352082B1

    公开(公告)日：2002-03-05

    申请号：US09157765

    申请日：1998-09-21

    申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson Sr. ,  Jeffrey Nowell

    发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson Sr. ,  Jeffrey Nowell

    IPC分类号： B08B304

    CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/02049 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  Y10S134/902

    摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

    摘要翻译： 一种用于清洁半导体晶片的方法（400）。 该方法包括将晶片浸入（420）包含水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤（450）期间引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

    Method for cleaning objects using a fluid charge
    3.
    发明授权
    Method for cleaning objects using a fluid charge 有权
    使用流体充电清洁物体的方法

    公开(公告)号：US6045621A

    公开(公告)日：2000-04-04

    申请号：US179540

    申请日：1998-10-26

    申请人： Suraj Puri ,  Raj Mohindra

    发明人： Suraj Puri ,  Raj Mohindra

    IPC分类号： B08B3/04 ,  G11B23/50 ,  H01L21/00

    CPC分类号： H01L21/67028 ,  B08B3/04 ,  G11B23/505 ,  Y10S134/902

    摘要： A method for cleaning an object. The method (400) includes immersing (420) an object in a liquid comprising water, which can be ultra-clean. The object has a front face, a back face, and an edge. The method includes providing (450) a cleaning enhancement substance (e.g., trace amount of polar organic compound, surfactant, ammonia bearing compound) into the liquid. In one embodiment, the cleaning enhancement substance can form a liquid film, such as a monolayer overlying an upper surface or level of the liquid. The method also includes providing a substantially particle free environment (e.g., ultra-clean gas, ultra-clean non-reactive gas) adjacent to the front face and the back face of the object as the liquid including the cleaning enhancement substance is being removed.

    摘要翻译： 清洁物体的方法。 方法（400）包括将物体浸入（420）包含水的液体中，其可以是超洁净的。 该物体具有前表面，后表面和边缘。 该方法包括向液体中提供（450）清洁增强物质（例如痕量的极性有机化合物，表面活性剂，含氨化合物）。 在一个实施方案中，清洁增强物质可以形成液膜，例如覆盖在液体的上表面或水平上的单层。 该方法还包括当除去包括清洁增强物质的液体时，提供与物体的正面和背面相邻的基本上无颗粒的环境（例如，超洁净气体，超清洁非反应性气体）。

    Method and apparatus for cleaning wafers using multiple tanks
    4.
    发明授权
    Method and apparatus for cleaning wafers using multiple tanks 失效
    使用多个罐清洗晶片的方法和设备

    公开(公告)号：US5988189A

    公开(公告)日：1999-11-23

    申请号：US111149

    申请日：1998-07-06

    申请人： Raj Mohindra ,  David C. Wong ,  Suraj Puri

    发明人： Raj Mohindra ,  David C. Wong ,  Suraj Puri

    IPC分类号： B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B3/02

    CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/67207 ,  H01L21/02049 ,  Y10S134/902

    摘要： A cleaning system (1, 5) having multiple cleaning chambers (200) is provided. Each cleaning chamber (200) includes an interior region sufficient for immersing a carrier (242), which has at least one wafer disposed therein, into an ultra-clean liquid. The cleaning chamber (200) also has an inlet operably coupled to the interior region to introduce a gas into the interior region and a drain operably coupled to the interior region to remove the ultra-clean liquid from the interior region at a selected rate. A controller 14 is operably coupled to the chamber (200) for selectively controlling the selected rate. In an alternative embodiment, an installation technique (80) for the above cleaning system (1,5) is provided.

    摘要翻译： 提供具有多个清洁室（200）的清洁系统（1,5）。 每个清洁室（200）包括足够的内部区域，用于将其中设置有至少一个晶片的载体（242）浸入超清洁液体中。 清洁室（200）还具有可操作地连接到内部区域以将气体引入内部区域的入口和可操作地联接到内部区域的排水口，以选择的速率从内部区域移除超清洁液体。 控制器14可操作地耦合到腔室（200），以选择性地控制所选择的速率。 在替代实施例中，提供了用于上述清洁系统（1,5）的安装技术（80）。

    Ultra-low particle semiconductor method
    6.
    发明授权
    Ultra-low particle semiconductor method 失效
    超低粒子半导体方法

    公开(公告)号：US5634978A

    公开(公告)日：1997-06-03

    申请号：US339326

    申请日：1994-11-14

    申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

    发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

    IPC分类号： B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B3/08 ,  B08B11/00

    CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049

    摘要： A method operates a system for wet processing of semiconductors. The system includes an inlet coupled to a fluid source, and a filter coupled to the inlet. The system also includes a sealed vessel coupled to the filter where the sealed vessel has a lower liquid portion and an upper vapor portion. The system further includes an outlet coupled to the sealed vessel. The outlet is attached to the lower liquid portion. A solvent injector coupled to the sealed vessel is also used. The solvent injector is coupled to the upper vapor portion, and supplies a gaseous mixture including a polar organic compound. The polar organic compound is a non-saturated polar organic vapor. The system also includes a gas source coupled to the sealed vessel. The gas source is coupled to the upper vapor portion, and supplies an inert gas into the upper vapor portion. A device for removing the liquid from the lower liquid portion at substantially a constant liquid level rate is also included.

    摘要翻译： 一种用于半导体湿法处理的系统。 该系统包括连接到流体源的入口和耦合到入口的过滤器。 该系统还包括耦合到过滤器的密封容器，其中密封容器具有下部液体部分和上部蒸气部分。 该系统还包括联接到密封容器的出口。 出口附接到下部液体部分。 还使用耦合到密封容器的溶剂注入器。 溶剂注入器联接到上部蒸气部分，并提供包含极性有机化合物的气体混合物。 极性有机化合物是非饱和极性有机蒸气。 该系统还包括耦合到密封容器的气体源。 气源与上蒸气部分连接，并向惰性气体供应惰性气体。 还包括以基本上恒定的液位速率从下部液体部分去除液体的装置。

    Ultra-low particle semiconductor cleaner using heated fluids
    9.
    发明授权
    Ultra-low particle semiconductor cleaner using heated fluids 失效
    使用加热流体的超低颗粒半导体清洁剂

    公开(公告)号：US5958146A

    公开(公告)日：1999-09-28

    申请号：US160505

    申请日：1998-09-24

    申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  David Wong

    发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  David Wong

    IPC分类号： H01L21/00 ,  H01L21/306 ,  B08B3/04 ,  B08B3/10 ,  B08B5/00

    CPC分类号： H01L21/67057 ,  H01L21/67051 ,  H01L21/02049 ,  Y10S134/902

    摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a hot or heated liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

    摘要翻译： 一种用于清洁半导体晶片的方法（400）。 该方法包括将晶片浸入（420）包含水的热或加热液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤（450）期间引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。