公开(公告)号：US20090272401A1

公开(公告)日：2009-11-05

申请号：US12503262

申请日：2009-07-15

申请人： Suraj Puri

发明人： Suraj Puri

IPC分类号： B08B3/08 ,  B08B3/12 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L21/67057

摘要： Inventive methods, systems and compositions of cleaning integrated circuit (“IC”) substrates are described. The cleaning methods of the present invention include: charging a solution, which contains at least a solute selected to promote cleaning of the IC substrate, to produce a charged solution, such that at least a portion of the solute is present as clusters in the charged solution; and conveying the charged solution for cleaning the IC substrate.The cleaning systems of the present invention include: a charging chamber for holding a solution, which contains at least a solute selected to promote cleaning of the integrated circuit substrate; and a first acoustic energy source capable of vibrating the solution in the charging chamber to produce a charged solution such that at least a portion of the solute is present as clusters in the charged solution.The cleaning compositions of the present invention include: a solvent; and a solute selected to promote cleaning of the IC substrate, wherein at least a portion of the solute is present in cluster form in the solution and the solute and solvent are present in a volumetric ratio that is between about 3×10−5:1and about 1×10−24:1.

摘要翻译： 描述了清洁集成电路（“IC”）衬底的发明方法，系统和组成。 本发明的清洗方法包括：对至少含有至少一种选择促进IC衬底清洗的溶质的溶液进行充电，以产生带电的溶液，使得溶质的至少一部分以带电 解; 并输送用于清洁IC基板的带电溶液。 本发明的清洁系统包括：用于保持溶液的充电室，其至少包含选择用于促进集成电路基板的清洁的溶质; 以及能够使充电室中的溶液振动以产生电荷溶液的第一声能源，使得至少一部分溶质作为带电溶液中的簇存在。 本发明的清洗组合物包括：溶剂; 以及选择用于促进IC衬底清洁的溶质，其中溶质的至少一部分以簇的形式存在于溶液中，溶质和溶剂以约3×10 -5：1至约1×10 3的体积比存在 -24：1。

公开(公告)号：US6004399A

公开(公告)日：1999-12-21

申请号：US784207

申请日：1997-01-15

申请人： Kaichiu Wong ,  Krishnaswamy Ramkumar ,  Hanna Bamnolker ,  Suraj Puri ,  Rajiv Bhushan ,  David Wong ,  Gary Elmore ,  Raj Mohindra

发明人： Kaichiu Wong ,  Krishnaswamy Ramkumar ,  Hanna Bamnolker ,  Suraj Puri ,  Rajiv Bhushan ,  David Wong ,  Gary Elmore ,  Raj Mohindra

IPC分类号： B08B3/04 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  B08B3/08

CPC分类号： H01L21/67057 ,  B08B3/04 ,  B08B3/102 ,  B08B3/12 ,  H01L21/67051 ,  Y10S134/902

摘要： A method is described for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance also is included. It is believed that the cleaning enhancement substance dopes any liquid adhered to the front and back faces of the wafer to cause a concentration gradient of the cleaning enhancement substance in the liquid and accelerate removal of the adhered liquid off of the water.

摘要翻译： 描述了一种用于清洁半导体晶片的方法。 该方法包括将晶片浸入包含水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括引入包含清洁增强物质的载气的步骤。 相信清洁增强物质会粘附到晶片的正面和背面的任何液体，从而引起液体中清洁增强物质的浓度梯度，并加速从水中除去附着液体。

公开(公告)号：US5958146A

公开(公告)日：1999-09-28

申请号：US160505

申请日：1998-09-24

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  David Wong

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  David Wong

IPC分类号： H01L21/00 ,  H01L21/306 ,  B08B3/04 ,  B08B3/10 ,  B08B5/00

CPC分类号： H01L21/67057 ,  H01L21/67051 ,  H01L21/02049 ,  Y10S134/902

摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a hot or heated liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

摘要翻译： 一种用于清洁半导体晶片的方法（400）。 该方法包括将晶片浸入（420）包含水的热或加热液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤（450）期间引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

公开(公告)号：US5891256A

公开(公告)日：1999-04-06

申请号：US861456

申请日：1997-12-29

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  B08B5/00

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid including water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas including a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

摘要翻译： 一种用于清洁半导体晶片的方法。 该方法包括将晶片浸入包括水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤中引入包括清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

公开(公告)号：US5878760A

公开(公告)日：1999-03-09

申请号：US862083

申请日：1997-05-22

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5849104A

公开(公告)日：1998-12-15

申请号：US710701

申请日：1996-09-19

申请人： Raj Mohindra ,  David C. Wong ,  Suraj Puri

发明人： Raj Mohindra ,  David C. Wong ,  Suraj Puri

IPC分类号： B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B13/00

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/67207 ,  H01L21/02049 ,  Y10S134/902

摘要： A cleaning system (1, 5) having multiple cleaning chambers (200) is provided. Each cleaning chamber (200) includes an interior region sufficient for immersing a carrier (242), which has at least one wafer disposed therein, into an ultra-clean liquid. The cleaning chamber (200) also has an inlet operably coupled to the interior region to introduce a gas into the interior region and a drain operably coupled to the interior region to remove the ultra-clean liquid from the interior region at a selected rate. A controller 14 is operably coupled to the chamber (200) for selectively controlling the selected rate. In an alternative embodiment, an installation technique (80) for the above cleaning system (1, 5) is provided.

摘要翻译： 提供具有多个清洁室（200）的清洁系统（1,5）。 每个清洁室（200）包括足够的内部区域，用于将其中设置有至少一个晶片的载体（242）浸入超清洁液体中。 清洁室（200）还具有可操作地连接到内部区域以将气体引入内部区域的入口和可操作地联接到内部区域的排水口，以选择的速率从内部区域移除超清洁液体。 控制器14可操作地耦合到腔室（200），以选择性地控制所选择的速率。 在替代实施例中，提供了用于上述清洁系统（5,5）的安装技术（80）。

公开(公告)号：US08138482B2

公开(公告)日：2012-03-20

申请号：US12126740

申请日：2008-05-23

申请人： Ariel Flat ,  Suraj Puri

发明人： Ariel Flat ,  Suraj Puri

IPC分类号： G01N21/59 ,  G01N21/00

CPC分类号： G01N21/274 ,  G01N21/33

摘要： A process for evaluating a cleaning solution is described. The process includes: (i) subjecting a solution, including a solute and a solvent, to sonic energy to create a sonicated solution; (ii) measuring UV absorption of the sonicated solution to produce a sample UV absorbance spectra; (iii) obtaining a reference solution, which includes a solute concentration that is similar to that of solute concentration in the sonicated solution; (iv) measuring UV absorption of the reference solution to produce a reference UV absorbance spectra; (v) scaling the reference UV absorbance spectra to the sample UV absorbance spectra at a lower range of the UV spectrum; (vi) subtracting from the reference UV absorbance spectra the sample UV absorbance spectra to produce a differential UV spectra; and (vii) evaluating at or near a peak of the sample UV absorbance spectra the differential UV absorbance spectra to determine whether the sonicated solution is activated.

摘要翻译： 描述了用于评估清洁溶液的方法。 该方法包括：（i）使包括溶质和溶剂在内的溶液进行声能以产生超声溶液; （ii）测量超声处理溶液的紫外吸收以产生样品紫外吸收光谱; （iii）获得参考溶液，其包括与超声处理溶液中溶质浓度相似的溶质浓度; （iv）测量参考溶液的UV吸收以产生参考紫外吸收光谱; （v）在UV光谱的较低范围内缩放参考紫外吸收光谱至样品紫外吸收光谱; （vi）从参考紫外吸收光谱中减去样品紫外吸收光谱以产生微分UV光谱; 和（vii）在样品UV吸收光谱的峰值处或附近评估差示紫外吸收光谱，以确定超声处理溶液是否被激活。

公开(公告)号：US07731800B2

公开(公告)日：2010-06-08

申请号：US11093904

申请日：2005-03-29

申请人： Suraj Puri

发明人： Suraj Puri

IPC分类号： B08B7/00

CPC分类号： H01L21/02071 ,  H01L21/02052 ,  H01L21/67057

摘要： Inventive methods and systems of cleaning patterned integrated circuit (“IC”) substrates are described. The cleaning methods of the present invention include: (1) providing the patterned integrated circuit substrate having thereon poly silicon lines adjacent to each other; (2) charging a solution, which contains at least a solute selected to promote cleaning of the patterned integrated circuit substrate, to produce a charged solution, wherein at least a portion of the solute is present as clusters in the charged solution; and (3) conveying the charged solution for cleaning the patterned integrated circuit substrate.

摘要翻译： 描述了清洁图案化集成电路（“IC”）衬底的发明方法和系统。 本发明的清洗方法包括：（1）提供具有彼此相邻的多晶硅线的图案化集成电路基板; （2）对溶液进行充电，所述溶液至少包含选定的溶质以促进图案化集成电路衬底的清洁，以产生带电溶液，其中溶质的至少一部分以带电溶液中的簇存在; 和（3）输送用于清洁图案化集成电路基板的带电溶液。

公开(公告)号：US20060019849A1

公开(公告)日：2006-01-26

申请号：US10886785

申请日：2004-07-07

申请人： Suraj Puri

发明人： Suraj Puri

IPC分类号： C11D7/32 ,  B08B3/12

CPC分类号： H01L21/02052 ,  H01L21/67057

摘要： Inventive methods, systems and compositions of cleaning integrated circuit (“IC”) substrates are described. The cleaning methods of the present invention include: charging a solution, which contains at least a solute selected to promote cleaning of the IC substrate, to produce a charged solution, such that at least a portion of the solute is present as clusters in the charged solution; and conveying the charged solution for cleaning the IC substrate. The cleaning systems of the present invention include: a charging chamber for holding a solution, which contains at least a solute selected to promote cleaning of the integrated circuit substrate; and a first acoustic energy source capable of vibrating the solution in the charging chamber to produce a charged solution such that at least a portion of the solute is present as clusters in the charged solution. The cleaning compositions of the present invention include: a solvent; and a solute selected to promote cleaning of the IC substrate, wherein at least a portion of the solute is present in cluster form in the solution and the solute and solvent are present in a volumetric ratio that is between about 3×10−5:1 and about 1×10−24:1.

摘要翻译： 描述了清洁集成电路（“IC”）衬底的发明方法，系统和组成。 本发明的清洗方法包括：对至少含有至少一种选择促进IC衬底清洗的溶质的溶液进行充电，以产生带电的溶液，使得溶质的至少一部分以带电 解; 并输送用于清洁IC基板的带电溶液。 本发明的清洁系统包括：用于保持溶液的充电室，其至少包含选择用于促进集成电路基板的清洁的溶质; 以及能够使充电室中的溶液振动以产生电荷溶液的第一声能源，使得至少一部分溶质作为带电溶液中的簇存在。 本发明的清洗组合物包括：溶剂; 以及选择用于促进IC衬底清洁的溶质，其中溶质的至少一部分以簇形式存在于溶液中，并且溶质和溶剂以约3×10 -5〜 1：约1×10 -4：1。

公开(公告)号：US6158446A

公开(公告)日：2000-12-12

申请号：US148641

申请日：1998-09-04

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B9/20

CPC分类号： H01L21/02052 ,  B08B3/10 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  G11B23/505 ,  Y10S134/902

摘要： A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

摘要翻译： 一种用于清洁半导体晶片的方法。 该方法包括将晶片浸入包含水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤中引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。