利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.034 秒)

    Ultra-low particle semiconductor cleaner
    1.
    发明授权
    Ultra-low particle semiconductor cleaner 失效
    超低颗粒半导体清洁剂

    公开(公告)号：US06352082B1

    公开(公告)日：2002-03-05

    申请号：US09157765

    申请日：1998-09-21

    申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson Sr. ,  Jeffrey Nowell

    发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson Sr. ,  Jeffrey Nowell

    IPC分类号： B08B304

    CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/02049 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  Y10S134/902

    摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

    摘要翻译： 一种用于清洁半导体晶片的方法（400）。 该方法包括将晶片浸入（420）包含水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤（450）期间引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

    Ultra-low particle semiconductor method
    3.
    发明授权
    Ultra-low particle semiconductor method 失效
    超低粒子半导体方法

    公开(公告)号：US5634978A

    公开(公告)日：1997-06-03

    申请号：US339326

    申请日：1994-11-14

    申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

    发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

    IPC分类号： B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B3/08 ,  B08B11/00

    CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049

    摘要： A method operates a system for wet processing of semiconductors. The system includes an inlet coupled to a fluid source, and a filter coupled to the inlet. The system also includes a sealed vessel coupled to the filter where the sealed vessel has a lower liquid portion and an upper vapor portion. The system further includes an outlet coupled to the sealed vessel. The outlet is attached to the lower liquid portion. A solvent injector coupled to the sealed vessel is also used. The solvent injector is coupled to the upper vapor portion, and supplies a gaseous mixture including a polar organic compound. The polar organic compound is a non-saturated polar organic vapor. The system also includes a gas source coupled to the sealed vessel. The gas source is coupled to the upper vapor portion, and supplies an inert gas into the upper vapor portion. A device for removing the liquid from the lower liquid portion at substantially a constant liquid level rate is also included.

    摘要翻译： 一种用于半导体湿法处理的系统。 该系统包括连接到流体源的入口和耦合到入口的过滤器。 该系统还包括耦合到过滤器的密封容器，其中密封容器具有下部液体部分和上部蒸气部分。 该系统还包括联接到密封容器的出口。 出口附接到下部液体部分。 还使用耦合到密封容器的溶剂注入器。 溶剂注入器联接到上部蒸气部分，并提供包含极性有机化合物的气体混合物。 极性有机化合物是非饱和极性有机蒸气。 该系统还包括耦合到密封容器的气体源。 气源与上蒸气部分连接，并向惰性气体供应惰性气体。 还包括以基本上恒定的液位速率从下部液体部分去除液体的装置。