公开(公告)号：US20180166603A1

公开(公告)日：2018-06-14

申请号：US15833795

申请日：2017-12-06

Applicant: Ramesh Kakkad

Inventor： Ramesh Kakkad

IPC: H01L31/18 ,  H01L31/077 ,  H01L31/0288 ,  H01L31/0368

CPC classification number: H01L31/1872 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/03682 ,  H01L31/056 ,  H01L31/07 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/50 ,  Y02P70/521

Abstract: Thin film silicon photovoltaic cell arrangements that include a heavily doped p-type polycrystalline silicon layer spaced-apart from the substrate and bottom electrode in order to reduce grain defects by initiating crystallization at a location far from the substrate. This is accomplished by forming a device structure incorporating such amorphous silicon films on a substrate and annealing at elevated temperature to crystallize the a-Si films such that the crystallization of the a-Si starts within the spaced-apart heavily doped p-type layer and proceeds through the intrinsic silicon layer.

公开(公告)号：US07964456B2

公开(公告)日：2011-06-21

申请号：US11033493

申请日：2005-01-12

Applicant: Ramesh Kakkad

Inventor： Ramesh Kakkad

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  C30B1/023 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L29/6675 ,  H01L29/78672

Abstract: A method of fabricating a polysilicon thin film produces a polysilicon thin film which is used to make a thin film transistor. The method includes depositing a silicon film containing amorphous silicon on a substrate, and performing thermal treatment on the silicon film at a predetermined temperature in an H2O atmosphere. Accordingly, the crystallization temperature and thermal treatment time are decreased when the amorphous silicon is crystallized by a solid phase crystallization method, and this prevents the substrate from being bent due to application of a thermal treatment process for a long time and at a high temperature. As a result of the invention, a polysilicon thin film having superior crystallization properties is obtained. Use of the polysilicon thin film in a thin film transistor results in the reduction of defects in the thin film resistor.

Abstract translation: 制造多晶硅薄膜的方法产生用于制造薄膜晶体管的多晶硅薄膜。 该方法包括在衬底上沉积含有非晶硅的硅膜，并在H 2 O气氛中在预定温度下对硅膜进行热处理。 因此，当通过固相结晶法使非晶硅结晶时，结晶温度和热处理时间降低，并且由于长时间和高温下的热处理工艺的应用，可以防止基板弯曲。 作为本发明的结果，获得了具有优异结晶性能的多晶硅薄膜。 在薄膜晶体管中使用多晶硅薄膜导致薄膜电阻器中缺陷的减少。

公开(公告)号：US07696030B2

公开(公告)日：2010-04-13

申请号：US11082982

申请日：2005-03-18

Applicant: Ramesh Kakkad ,  Yong-Seog Kim

Inventor： Ramesh Kakkad ,  Yong-Seog Kim

IPC: H01L21/20

CPC classification number: H01L29/66765 ,  H01L29/66757

Abstract: A method of fabricating a semiconductor device and a semiconductor device fabricated by the same method are disclosed. The method includes: depositing a silicon layer containing amorphous silicon on a substrate using any one of a plasma enhanced chemical vapor deposition (PECVD) method and a low pressure chemical vapor deposition (LPCVD) method; annealing the silicon layer in an H2O atmosphere at a certain temperature to form a polycrystalline silicon layer; forming a gate insulating layer on the polycrystalline silicon layer; forming impurity regions in the polycrystalline silicon layer to define source and drain regions; and activating the impurity regions. Thus, it is possible to provide a semiconductor device, in which the substrate is prevented from being bent and polycrystalline silicon constituting a semiconductor layer is excellent.

Abstract translation: 公开了一种通过相同方法制造半导体器件和半导体器件的方法。 该方法包括：使用等离子体增强化学气相沉积（PECVD）法和低压化学气相沉积（LPCVD）法中的任何一种，在衬底上沉积含有非晶硅的硅层; 在一定温度下在H 2 O气氛中退火硅层以形成多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述多晶硅层中形成杂质区以限定源区和漏区; 并激活杂质区域。 因此，可以提供一种防止基板弯曲的半导体器件，并且构成半导体层的多晶硅是优异的。

公开(公告)号：US07544550B2

公开(公告)日：2009-06-09

申请号：US11083203

申请日：2005-03-18

Applicant: Ramesh Kakkad ,  Yong-Seog Kim

Inventor： Ramesh Kakkad ,  Yong-Seog Kim

IPC: H01L21/20 ,  H01L21/335

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L29/66757 ,  H01L29/66765

Abstract: A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O at a predetermined temperature, and at the same time activating the impurity ions to form a semiconductor layer; forming a gate insulating layer over the entire surface of the substrate having the semiconductor layer; and forming a gate electrode on the gate insulating layer in correspondence with a channel region of the semiconductor layer, in which the annealing process is simplified by crystallizing the polycrystalline silicon and at the same time activating the impurity ions, thereby preventing the substrate from being deformed due to high temperature during the annealing process.

Abstract translation: 提供了半导体器件及其制造方法。 该方法包括：在衬底上沉积含有非晶硅的硅层; 通过用杂质离子掺杂硅层来限定源区和漏区; 在H 2 O气氛下，在预定温度下通过退火工艺使非晶硅结晶，同时激活杂质离子以形成半导体层; 在具有半导体层的衬底的整个表面上形成栅极绝缘层; 以及在所述栅极绝缘层上形成与所述半导体层的沟道区相对应的栅电极，其中所述退火处理通过使所述多晶硅结晶而被简化，并且同时激活所述杂质离子，从而防止所述衬底变形 由于退火过程中的高温。

公开(公告)号：US20090042343A1

公开(公告)日：2009-02-12

申请号：US12184525

申请日：2008-08-01

Applicant: Ramesh Kakkad

Inventor： Ramesh Kakkad

IPC: H01L21/00

CPC classification number: H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757

Abstract: The present invention includes methods to crystallize amorphous silicon. A structure including a conductive film with at least one conductive layer in thermal contact with an amorphous silicon (a-Si) layer to be crystallized is exposed to an alternating or varying magnetic field. The conductive film is more easily heated by the alternative or varying magnetic field, which, in-turn, heats the a-Si film and crystallizes it while keeping the substrate at a low enough temperature to avoid damage to or bending of the substrate. The method can be applied to the fabrication of many semiconductor devices, including thin film transistors and solar cells.

Abstract translation: 本发明包括使非晶硅结晶的方法。 包括具有与待结晶的非晶硅（a-Si）层热接触的至少一个导电层的导电膜的结构暴露于交替或变化的磁场。 导电膜更容易被替代或变化的磁场加热，这又反过来加热a-Si膜并使其结晶，同时保持基板在足够低的温度下，以避免基板的损坏或弯曲。 该方法可以应用于许多半导体器件的制造，包括薄膜晶体管和太阳能电池。

公开(公告)号：US20070298595A1

公开(公告)日：2007-12-27

申请号：US11472858

申请日：2006-06-22

Applicant: Ramesh Kakkad

Inventor： Ramesh Kakkad

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757

Abstract: A method of fabricating a polysilicon film includes: forming a seed layer on a surface of a substrate; forming a silicon layer over the surface of the seed layer; and performing a laser annealing process to transform the silicon layer into a polysilicon layer at a laser energy equal to or greater than that needed to cause complete melting of the silicon layer.

Abstract translation: 制造多晶硅膜的方法包括：在基板的表面上形成种子层; 在种子层的表面上形成硅层; 以及进行激光退火处理，以等于或大于使硅层完全熔化所需的激光能量将硅层转化为多晶硅层。

公开(公告)号：US20060003502A1

公开(公告)日：2006-01-05

申请号：US11083203

申请日：2005-03-18

Applicant: Ramesh Kakkad ,  Yong-Seog Kim

Inventor： Ramesh Kakkad ,  Yong-Seog Kim

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L29/66757 ,  H01L29/66765

Abstract: A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O at a predetermined temperature, and at the same time activating the impurity ions to form a semiconductor layer; forming a gate insulating layer over the entire surface of the substrate having the semiconductor layer; and forming a gate electrode on the gate insulating layer in correspondence with a channel region of the semiconductor layer, in which the annealing process is simplified by crystallizing the polycrystalline silicon and at the same time activating the impurity ions, thereby preventing the substrate from being deformed due to high temperature during the annealing process.

Abstract translation: 提供了半导体器件及其制造方法。 该方法包括：在衬底上沉积含有非晶硅的硅层; 通过用杂质离子掺杂硅层来限定源区和漏区; 在H 2 O 2气氛下通过退火工艺在预定温度下使非晶硅结晶，同时激活杂质离子以形成半导体层; 在具有半导体层的衬底的整个表面上形成栅极绝缘层; 以及在所述栅极绝缘层上形成与所述半导体层的沟道区相对应的栅电极，其中所述退火处理通过使所述多晶硅结晶而被简化，并且同时激活所述杂质离子，从而防止所述衬底变形 由于退火过程中的高温。

公开(公告)号：US20060003501A1

公开(公告)日：2006-01-05

申请号：US11082982

申请日：2005-03-18

Applicant: Ramesh Kakkad ,  Yong-Seog Kim

Inventor： Ramesh Kakkad ,  Yong-Seog Kim

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/66765 ,  H01L29/66757

Abstract: A method of fabricating a semiconductor device and a semiconductor device fabricated by the same method are disclosed. The method includes: depositing a silicon layer containing amorphous silicon on a substrate using any one of a plasma enhanced chemical vapor deposition (PECVD) method and a low pressure chemical vapor deposition (LPCVD) method; annealing the silicon layer in an H2O atmosphere at a certain temperature to form a polycrystalline silicon layer; forming a gate insulating layer on the polycrystalline silicon layer; forming impurity regions in the polycrystalline silicon layer to define source and drain regions; and activating the impurity regions. Thus, it is possible to provide a semiconductor device, in which the substrate is prevented from being bent and polycrystalline silicon constituting a semiconductor layer is excellent.

Abstract translation: 公开了一种通过相同方法制造半导体器件和半导体器件的方法。 该方法包括：使用等离子体增强化学气相沉积（PECVD）法和低压化学气相沉积（LPCVD）法中的任何一种，在衬底上沉积含有非晶硅的硅层; 在一定温度下在H 2 O 2气氛中退火硅层以形成多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述多晶硅层中形成杂质区以限定源区和漏区; 并激活杂质区域。 因此，可以提供一种防止基板弯曲的半导体器件，并且构成半导体层的多晶硅是优异的。

公开(公告)号：US08294840B2

公开(公告)日：2012-10-23

申请号：US12051006

申请日：2008-03-19

Applicant: Ramesh Kakkad ,  Chieh-Wen Lin

Inventor： Ramesh Kakkad ,  Chieh-Wen Lin

IPC: G02F1/136 ,  G02F1/1343

CPC classification number: G02F1/134363 ,  G02F1/13454 ,  G02F1/13624 ,  G02F2001/134372 ,  G02F2201/40

Abstract: A system for displaying images, having a display panel, comprising: a lower substrate with a first surface, wherein the first surface is divided into a pixel area and a driver area; a peripheral circuit within the driver area on the first surface; at least one thin film transistor is formed in the pixel area, wherein the thin film transistor comprises an active layer, a gate dielectric layer overlying the active layer, and a gate electrode overlying the gate dielectric layer, and the active layer has source and drain regions; a first transparent electrode layer directly overlapped on a portion of the drain region, electrically connected thereto; and a second transparent electrode pattern is disposed on the gate dielectric layer, opposing the first transparent electrode layer.

Abstract translation: 一种用于显示具有显示面板的图像的系统，包括：具有第一表面的下基板，其中所述第一表面被划分为像素区域和驱动器区域; 在第一表面上的驱动器区域内的外围电路; 在所述像素区域中形成至少一个薄膜晶体管，其中所述薄膜晶体管包括有源层，覆盖所述有源层的栅极电介质层和覆盖所述栅极介电层的栅电极，并且所述有源层具有源极和漏极 区域; 直接重叠在所述漏极区域的与其电连接的第一透明电极层; 并且第二透明电极图案设置在栅电介质层上，与第一透明电极层相对。

公开(公告)号：US07670886B2

公开(公告)日：2010-03-02

申请号：US11472858

申请日：2006-06-22

Applicant: Ramesh Kakkad

Inventor： Ramesh Kakkad

IPC: H01L21/00

CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757

Abstract: A method of fabricating a polysilicon film includes: forming a seed layer on a surface of a substrate; forming a silicon layer over the surface of the seed layer; and performing a laser annealing process to transform the silicon layer into a polysilicon layer at a laser energy equal to or greater than that needed to cause complete melting of the silicon layer.

Abstract translation: 制造多晶硅膜的方法包括：在基板的表面上形成种子层; 在种子层的表面上形成硅层; 以及进行激光退火处理，以等于或大于使硅层完全熔化所需的激光能量将硅层转化为多晶硅层。