公开(公告)号：US07985665B2

公开(公告)日：2011-07-26

申请号：US12045932

申请日：2008-03-11

Applicant: Dong-byum Kim ,  Se-jin Chung

Inventor： Dong-byum Kim ,  Se-jin Chung

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/045

Abstract: Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract translation: 提供一种形成具有改善的电特性的多晶硅薄膜的方法。 该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒 通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过 预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

公开(公告)号：US20090275178A1

公开(公告)日：2009-11-05

申请号：US12490236

申请日：2009-06-23

Applicant: Se-Jin CHUNG ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

Inventor： Se-Jin CHUNG ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC: H01L21/336 ,  H01L21/268

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

Abstract: In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

Abstract translation: 在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。 非晶硅薄膜位于基板的第一端部上。 液化硅结晶形成硅晶粒。 激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。 然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。 因此，可以提高非晶硅薄膜的电特性。

公开(公告)号：US08085368B2

公开(公告)日：2011-12-27

申请号：US12684150

申请日：2010-01-08

Applicant: Soon-Dong Kim ,  Seung-Gyu Tae ,  Se-Jin Chung ,  Jun-Hee Moon ,  Myung-Woo Lee

Inventor： Soon-Dong Kim ,  Seung-Gyu Tae ,  Se-Jin Chung ,  Jun-Hee Moon ,  Myung-Woo Lee

IPC: G02F1/133

CPC classification number: G02F1/1362 ,  G02F2001/133388 ,  G02F2201/58

Abstract: A liquid crystal display and a simple method to fabricate the same are provided, which can accurately measure luminance of an external light. The liquid crystal display includes a substrate; a thin film transistor array formed on the substrate; and a photoelectric conversion element having a reflection pattern formed on at least one side of the substrate, a photoelectric conversion region provided with a first semiconductor region formed on an upper part of the reflection pattern to receive an external light reflected by the reflection pattern, and a dummy pattern formed on an upper part of the photoelectric conversion region with a width corresponding to the first semiconductor region. The photoelectric conversion region may be configured to adjust the quantity of light incident to the thin film transistor array.

Abstract translation: 提供液晶显示器和制造它的简单方法，其可以精确地测量外部光的亮度。 液晶显示器包括基板; 形成在所述基板上的薄膜晶体管阵列; 以及光电转换元件，其具有形成在所述基板的至少一侧上的反射图案;光电转换区域，设置有形成在所述反射图案的上部的第一半导体区域，以接收由所述反射图案反射的外部光;以及 形成在光电转换区域的上部的虚拟图案，其宽度对应于第一半导体区域。 光电转换区域可以被配置为调节入射到薄膜晶体管阵列的光量。

公开(公告)号：US20100182553A1

公开(公告)日：2010-07-22

申请号：US12684150

申请日：2010-01-08

Applicant: Soon-Dong Kim ,  Seung-Gyu Tae ,  Se-Jin Chung ,  Jun-Hee Moon ,  Myung-Woo Lee

Inventor： Soon-Dong Kim ,  Seung-Gyu Tae ,  Se-Jin Chung ,  Jun-Hee Moon ,  Myung-Woo Lee

IPC: G02F1/133 ,  G02F1/13

CPC classification number: G02F1/1362 ,  G02F2001/133388 ,  G02F2201/58

Abstract: A liquid crystal display and a simple method to fabricate the same are provided, which can accurately measure luminance of an external light. The liquid crystal display includes a substrate; a thin film transistor array formed on the substrate; and a photoelectric conversion element having a reflection pattern formed on at least one side of the substrate, a photoelectric conversion region provided with a first semiconductor region formed on an upper part of the reflection pattern to receive an external light reflected by the reflection pattern, and a dummy pattern formed on an upper part of the photoelectric conversion region with a width corresponding to the first semiconductor region. The photoelectric conversion region may be configured to adjust the quantity of light incident to the thin film transistor array.

Abstract translation: 提供液晶显示器和制造它的简单方法，其可以精确地测量外部光的亮度。 液晶显示器包括基板; 形成在所述基板上的薄膜晶体管阵列; 以及光电转换元件，其具有形成在所述基板的至少一侧上的反射图案;光电转换区域，设置有形成在所述反射图案的上部的第一半导体区域，以接收由所述反射图案反射的外部光;以及 形成在光电转换区域的上部的虚拟图案，其宽度对应于第一半导体区域。 光电转换区域可以被配置为调节入射到薄膜晶体管阵列的光量。

公开(公告)号：US20090258465A1

公开(公告)日：2009-10-15

申请号：US12407405

申请日：2009-03-19

Applicant: Se-Jin CHUNG

Inventor： Se-Jin CHUNG

IPC: H01L21/336 ,  H01L21/20 ,  B05C11/00

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L27/1285

Abstract: A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.

Abstract translation: 本发明的硅结晶掩模包括： 主曝光部分，其包括完全透射光的多个完整光透射区域，以及包括多个不完全光透射区域的预曝光部分，其中每个部分透射光部分透射光，其中至少两个不完全透光区域具有 不同大小的透光率彼此相差。

公开(公告)号：US20060228908A1

公开(公告)日：2006-10-12

申请号：US11234609

申请日：2005-09-23

Applicant: Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

Inventor： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

Abstract: In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

公开(公告)号：US07056382B2

公开(公告)日：2006-06-06

申请号：US10689030

申请日：2003-10-21

Applicant: Se-Jin Chung

Inventor： Se-Jin Chung

IPC: C30B25/12

CPC classification number: C30B29/06 ,  C30B13/00 ,  Y10T117/10

Abstract: A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.

公开(公告)号：US06656270B2

公开(公告)日：2003-12-02

申请号：US09965844

申请日：2001-10-01

Applicant: Se-Jin Chung

Inventor： Se-Jin Chung

IPC: C30B2502

CPC classification number: C30B29/06 ,  C30B13/00 ,  Y10T117/10

Abstract: A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.

公开(公告)号：US06326286B1

公开(公告)日：2001-12-04

申请号：US09311700

申请日：1999-05-13

Applicant: Won-Kyu Park ,  Yun-Ho Jung ,  Se-Jin Chung

Inventor： Won-Kyu Park ,  Yun-Ho Jung ,  Se-Jin Chung

IPC: H01L2120

CPC classification number: H01L21/0268 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757

Abstract: An active layer commonly used in a thin-film-transistor is made by irradiating an amorphous silicon layer with a laser source at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region. The melted region of the amorphous silicon layer is solidified with a lateral grain growth from the unmelted region to the melted region. Then the amorphous silicon layer is translated relative to the laser source. In such an apparatus, the laser source is prepared by emitting a laser beam through a mask. The mask has a plurality of transparent regions which comprises slits arranged adjacent to or next to each other and separated by a predetermined distance in certain applications. Such pattern includes contiguous chevron-shaped lines with curved apexes. Alternatively, the pattern also includes slim rectangular apertures.

Abstract translation: 在薄膜晶体管中通常使用的有源层通过以足以引起基本上完全熔化以形成熔融区域和未熔化区域的能量密度的激光源照射非晶硅层而制成。 非晶硅层的熔融区域由从未熔化区域到熔融区域的横向晶粒生长而固化。 然后非晶硅层相对于激光源平移。 在这种装置中，激光源通过掩模发射激光束来制备。 掩模具有多个透明区域，其包括彼此相邻或相邻布置的狭缝，并且在某些应用中间隔预定距离。 这种图案包括具有弯曲顶点的相邻的人字形线。 或者，图案还包括纤细的矩形孔。

公开(公告)号：US08329500B2

公开(公告)日：2012-12-11

申请号：US12642527

申请日：2009-12-18

Applicant: Byoung-Kyu Lee ,  Se-Jin Chung ,  Byoung-June Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Min-Seok Oh ,  Ku-Hyun Kang ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Min Park ,  Mi-Hwa Lim ,  Joon-Young Seo

Inventor： Byoung-Kyu Lee ,  Se-Jin Chung ,  Byoung-June Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Min-Seok Oh ,  Ku-Hyun Kang ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Min Park ,  Mi-Hwa Lim ,  Joon-Young Seo

IPC: H01L21/00

CPC classification number: H01L21/324 ,  H01L21/02667 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/075 ,  H01L31/1872 ,  Y02E10/548 ,  Y02P70/521

Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.

Abstract translation: 提供了使用焦耳加热诱导结晶法制造光伏器件的方法。 该方法包括：在衬底上形成第一导电图案; 在具有第一导电图案的基板上形成光电转换层; 以及通过向所述光电转换层施加电场而使所述光电转换层的至少一部分结晶，其中所述光电转换层包括含有第一杂质的第一非晶半导体层，第二本征非晶半导体层和第三非晶半导体层 含有第二杂质。