摘要:
A liquid crystal display and a simple method to fabricate the same are provided, which can accurately measure luminance of an external light. The liquid crystal display includes a substrate; a thin film transistor array formed on the substrate; and a photoelectric conversion element having a reflection pattern formed on at least one side of the substrate, a photoelectric conversion region provided with a first semiconductor region formed on an upper part of the reflection pattern to receive an external light reflected by the reflection pattern, and a dummy pattern formed on an upper part of the photoelectric conversion region with a width corresponding to the first semiconductor region. The photoelectric conversion region may be configured to adjust the quantity of light incident to the thin film transistor array.
摘要:
A liquid crystal display and a simple method to fabricate the same are provided, which can accurately measure luminance of an external light. The liquid crystal display includes a substrate; a thin film transistor array formed on the substrate; and a photoelectric conversion element having a reflection pattern formed on at least one side of the substrate, a photoelectric conversion region provided with a first semiconductor region formed on an upper part of the reflection pattern to receive an external light reflected by the reflection pattern, and a dummy pattern formed on an upper part of the photoelectric conversion region with a width corresponding to the first semiconductor region. The photoelectric conversion region may be configured to adjust the quantity of light incident to the thin film transistor array.
摘要:
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.
摘要:
Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.
摘要:
A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.
摘要:
A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.
摘要:
A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.
摘要:
Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.
摘要:
A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
摘要:
A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.