公开(公告)号：US20120299072A1

公开(公告)日：2012-11-29

申请号：US13425906

申请日：2012-03-21

申请人： WAN-DON KIM ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

发明人： WAN-DON KIM ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

IPC分类号： H01L27/06

CPC分类号： H01L21/823475 ,  H01L21/823456

摘要： Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.

摘要翻译： 提供了包括第一，第二和第三源极/漏极区域的半导体器件。 提供了与第一源/漏区接触的第一导电插塞，具有第一宽度和第一高度，并且包括第一材料。 设置覆盖第一导电插塞和基板的层间绝缘层。 提供垂直穿过层间绝缘层以与具有第二宽度和第二高度并且包括第二材料的第二源/漏区接触的第二导电插塞。 设置垂直贯穿层间绝缘层与第三源极/漏极区域接触的第三导电插塞，具有第三宽度和第三高度，并且包括第三材料。 第二种材料包括贵金属，贵金属氧化物或钙钛矿型导电氧化物。

公开(公告)号：US08318558B2

公开(公告)日：2012-11-27

申请号：US12827845

申请日：2010-06-30

申请人： Seung Hwan Lee

发明人： Seung Hwan Lee

IPC分类号： H01L21/8238

CPC分类号： H01L27/10885 ,  H01L21/743 ,  H01L27/10876 ,  H01L29/1083

摘要： A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes vertical pillars formed by etching a semiconductor substrate and junction regions which are located among the neighboring vertical pillars and spaced apart from one another in a zigzag pattern. As a result, the semiconductor device easily guarantees an electrical passage between the semiconductor substrate and the vertical pillars, such that it substantially prevents the floating phenomenon from being generated, resulting in the prevention of deterioration of the semiconductor device.

摘要翻译： 公开了半导体器件及其形成方法。 半导体器件包括通过蚀刻半导体衬底和连接区域而形成的垂直柱，该区域位于相邻的垂直柱之间，并且以锯齿形图案彼此间隔开。 结果，半导体器件容易地保证半导体衬底和垂直柱之间的电通路，使得其基本上防止浮动现象被产生，从而防止半导体器件的劣化。

公开(公告)号：US08243147B2

公开(公告)日：2012-08-14

申请号：US12835831

申请日：2010-07-14

申请人： Seung-hwan Lee

发明人： Seung-hwan Lee

IPC分类号： H04N9/04 ,  H04N5/228

CPC分类号： G03B5/00 ,  H02K41/0354 ,  H02K2201/18

摘要： A handshake correction apparatus is provided that comprises: a correction lens that is driven in a plane defined by a first axis and a second axis that are each independent; a pair of first magnets disposed at opposite sides of the correction lens for providing a driving force in a first axis direction; at least one second magnet disposed on at least one side of the correction lens for providing a driving force in a second axis direction; and driving coils disposed to face the first and second magnets for exerting electromagnetic interaction therebetween. In the handshake correction apparatus, a rotation of the correction lens is minimized to improve a controlling characteristic.

摘要翻译： 提供了一种握手校正装置，包括：校正透镜，其在由第一轴和第二轴限定的平面中被驱动，所述第一轴和第二轴各自独立; 设置在所述校正透镜的相对侧的一对第一磁体，用于在第一轴线方向上提供驱动力; 设置在所述校正透镜的至少一侧的至少一个第二磁体，用于在第二轴线方向上提供驱动力; 以及设置成面对第一和第二磁体的驱动线圈，用于在它们之间施加电磁相互作用。 在握手校正装置中，校正透镜的旋转被最小化以改善控制特性。

公开(公告)号：US08219108B2

公开(公告)日：2012-07-10

申请号：US12533109

申请日：2009-07-31

申请人： Seung-Hwan Lee ,  Jin Up Kim ,  Kyu Tae Lee

发明人： Seung-Hwan Lee ,  Jin Up Kim ,  Kyu Tae Lee

IPC分类号： H04W4/00

CPC分类号： H04W72/048 ,  H04W16/14

摘要： Provided is a method of operating a smart radio communication system, the method including: collecting information associated with each of a plurality of radio access technologies (RATs) through an access to the plurality of RATs; receiving a type of a service, requested by a terminal, via a first RAT accessing the terminal among the plurality of RATs; selecting an optimal channel based on the collected information and the received type of the service; and transmitting a content corresponding to the service via the selected optimal channel.

摘要翻译： 提供了一种操作智能无线电通信系统的方法，该方法包括：通过对多个RAT的接入来收集与多个无线电接入技术（RAT）中的每一个相关联的信息; 通过接入所述多个RAT中的所述终端的第一RAT接收由终端请求的服务类型; 基于所收集的信息和接收到的服务类型来选择最佳信道; 以及经由所选择的最优信道发送与所述服务相对应的内容。

公开(公告)号：US20120118376A1

公开(公告)日：2012-05-17

申请号：US13165594

申请日：2011-06-21

申请人： Seung-Hwan LEE ,  Jae-Seok LIM ,  Soon-Hak HWANG ,  Jung-Suk SONG

发明人： Seung-Hwan LEE ,  Jae-Seok LIM ,  Soon-Hak HWANG ,  Jung-Suk SONG

IPC分类号： H01L31/0203 ,  F16J15/10 ,  H01L31/18 ,  F16J15/06

CPC分类号： H01G9/2077 ,  C03C27/10 ,  H01G9/2031 ,  H01G9/2059 ,  H01G9/2068 ,  H01L51/5246 ,  Y02E10/542

摘要： A sealing member, a photoelectric conversion device having the same, and a method of preparing the same are disclosed. In one aspect, the sealing member for the photoelectric conversion device joins a first substrate and a second substrate, which face each other, and seals an electrolyte solution in a space therebetween. An edge of the sealing member may include a rounded portion and a radius of a circle including the rounded portion is about 50% or more of the width of the sealing member. The sealing member may serve to reduce leakage of the electrolyte solution due to lowered adhesion of the sealing member or a wrinkled sealing member, and thus, improve reliability of the photoelectric conversion device.

摘要翻译： 公开了一种密封构件，具有该密封构件的光电转换装置及其制备方法。 一方面，用于光电转换装置的密封构件将彼此面对的第一基板和第二基板接合在其间的空间中密封电解质溶液。 密封构件的边缘可以包括圆形部分，并且包括圆形部分的圆的半径为密封构件的宽度的约50％或更多。 密封构件可以由于密封构件或起皱密封构件的粘合性降低而减少电解质溶液的泄漏，从而提高光电转换装置的可靠性。

公开(公告)号：US20120086014A1

公开(公告)日：2012-04-12

申请号：US13182916

申请日：2011-07-14

申请人： Wan-Don Kim ,  Beom-Seok Kim ,  Yong-Suk Tak ,  Kyu-Ho Cho ,  Seung-Hwan Lee ,  Oh-Seong Kwon ,  Geun-Kyu Choi

发明人： Wan-Don Kim ,  Beom-Seok Kim ,  Yong-Suk Tak ,  Kyu-Ho Cho ,  Seung-Hwan Lee ,  Oh-Seong Kwon ,  Geun-Kyu Choi

IPC分类号： H01L29/12 ,  H01L23/48

CPC分类号： H01L28/60 ,  H01L24/32 ,  H01L28/90 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/8385

摘要： A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.

摘要翻译： 多个金属图案设置在基板上。 在多个金属图案之间提供支撑结构。 支撑结构具有支撑体和胶层。 当从横截面视图观察时，多个金属图案中的每一个具有比基板上的水平长度更大的垂直长度。 支架具有至少4.5eV的带隙能量。 胶层与多个金属图案接触。 支撑体和胶层由不同的材料形成。

公开(公告)号：US08105521B2

公开(公告)日：2012-01-31

申请号：US11994643

申请日：2006-07-05

申请人： In-Sik Han ,  Jae-Young Lee ,  Seung-Hwan Lee ,  Chang-Bae Lee ,  So-Yeon Kwon

发明人： In-Sik Han ,  Jae-Young Lee ,  Seung-Hwan Lee ,  Chang-Bae Lee ,  So-Yeon Kwon

IPC分类号： D01D5/18

CPC分类号： D01F6/605 ,  Y10T428/2913 ,  Y10T428/2969

摘要： Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in a process of preparing wholly aromatic polyamide polymer, a multiple tubular feed pipe for polymeric monomer and polymerization solvent with specific construction of adjacent inner paths 11a and outer paths 11b which are alternately arranged one another is used to feed either aromatic diacid chloride A or aromatic diamine dissolved in the polymerization solvent B into a polymerization reactor 20 through corresponding one among the inner and outer paths 11a and 11b. The present invention is effective to progress uniform and homogeneous polymerization over all of area of a polymerization reactor 20 leading to reduction of deviation in degree of polymerization, since polymeric monomers are miscible and react together very well immediately after putting the monomers into the reactor 20. Accordingly, the wholly aromatic polyamide filament produced exhibits narrow PDI and increased ACS, so as to considerably improve strength and modulus thereof.

摘要翻译： 公开了全芳族聚酰胺长丝及其制造方法，其特征在于，在制备全芳族聚酰胺聚合物的方法中，用于聚合单体的多管式进料管和具有相邻内部通道11a和外部通道的特定结构的聚合溶剂 11b彼此交替排列，用于将溶解在聚合溶剂B中的芳香族二酰氯A或芳香族二胺通过内部通路11a和内部通路11b中的相应一个进入聚合反应器20。 本发明有效地在聚合反应器20的所有区域上进行均匀均匀的聚合，导致聚合度偏差的降低，因为聚合单体是可混溶的，并且在将单体放入反应器20后立即非常好地反应。 因此，所生产的全芳族聚酰胺长丝表现出窄的PDI和增加的ACS，从而显着提高其强度和模量。

公开(公告)号：US07838966B2

公开(公告)日：2010-11-23

申请号：US11825181

申请日：2007-07-05

申请人： Xiao Quan Wang ,  Chang-Bong Oh ,  Seung-Hwan Lee

发明人： Xiao Quan Wang ,  Chang-Bong Oh ,  Seung-Hwan Lee

IPC分类号： H01L23/62

CPC分类号： H01L27/0802 ,  H01L28/20

摘要： A semiconductor device may include a resistance pattern including a resistance material on a substrate. The resistance pattern may include first and second spaced apart base elements, a bridge element, and first, second, third, and fourth extension elements. The first and second base elements may be substantially parallel, and the bridge element may be connected between respective center portions of the first and second spaced apart base elements. The first and second extension elements may be connected to opposite ends of the first base element and may extend toward the second base element, and the third and fourth extension elements may be connected to opposite ends of the second base element and may extend toward the first base element. Related methods are also discussed.

摘要翻译： 半导体器件可以包括在基板上包括电阻材料的电阻图案。 电阻图案可以包括第一和第二间隔开的基本元件，桥接元件以及第一，第二，第三和第四延伸元件。 第一和第二基座元件可以是基本上平行的，并且桥接元件可以连接在第一和第二间隔开的基本元件的相应中心部分之间。 第一和第二延伸元件可以连接到第一基座元件的相对端并且可以朝向第二基座元件延伸，并且第三和第四延伸元件可以连接到第二基座元件的相对端并且可以朝着第一基座元件 基本元素 还讨论了相关方法。

公开(公告)号：US07820514B2

公开(公告)日：2010-10-26

申请号：US11756427

申请日：2007-05-31

申请人： Min-kyung Ryu ,  Han-mei Choi ,  Seung-hwan Lee ,  Sun-jung Kim ,  Se-hoon Oh

发明人： Min-kyung Ryu ,  Han-mei Choi ,  Seung-hwan Lee ,  Sun-jung Kim ,  Se-hoon Oh

IPC分类号： H01L21/336

CPC分类号： H01L29/513 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28282 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78 ,  H01L29/792

摘要： A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.

摘要翻译： 形成闪速存储器件的方法可以包括在半导体衬底上形成隧穿氧化膜，在隧道氧化膜上形成电荷存储层，在第一温度下在电荷存储层上形成第一阻挡氧化膜，形成第二 在高于第一温度的第二温度下在第一阻挡氧化膜上形成阻挡氧化膜，以及在第二阻挡氧化膜上形成栅电极。

公开(公告)号：US20100151877A1

公开(公告)日：2010-06-17

申请号：US12533109

申请日：2009-07-31

申请人： Seung-Hwan LEE ,  Jin Up KIM ,  Kyu Tae LEE

发明人： Seung-Hwan LEE ,  Jin Up KIM ,  Kyu Tae LEE

IPC分类号： H04W72/00

CPC分类号： H04W72/048 ,  H04W16/14

摘要： Provided is a method of operating a smart radio communication system, the method including: collecting information associated with each of a plurality of radio access technologies (RATs) through an access to the plurality of RATs; receiving a type of a service, requested by a terminal, via a first RAT accessing the terminal among the plurality of RATs; selecting an optimal channel based on the collected information and the received type of the service; and transmitting a content corresponding to the service via the selected optimal channel.

摘要翻译： 提供了一种操作智能无线电通信系统的方法，该方法包括：通过对多个RAT的接入来收集与多个无线电接入技术（RAT）中的每一个相关联的信息; 通过接入所述多个RAT中的所述终端的第一RAT接收由终端请求的服务类型; 基于所收集的信息和接收到的服务类型来选择最佳信道; 以及经由所选择的最优信道发送与所述服务相对应的内容。